Abstract: A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Abstract: A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A semiconductor processing system including a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus includes a control section configured to control an operation of a pressure adjusting mechanism for adjusting the pressure inside a vaporizing chamber. The control section is preset to cause the pressure inside the vaporizing chamber to fall within a predetermined pressure range with reference to a pressure detection value obtained by a pressure detector. The predetermined pressure range is defined by an upper limit lower than a first limit value, at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, and a lower limit higher than a second limit value, at which vaporization of the liquid material starts being unstable and the pressure inside the vaporizing chamber starts pulsating movement due to a decrease in the pressure.

Abstract: A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

Abstract: A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

Abstract: Provides an efficient information recording service, such as a printing service, for electronic data that is read or distributed. An example embodiment includes a printing provider computer, a vendor computer and a client computer are connected to the Internet. Upon the receipt of a request from the client computer, the vendor computer transmits, to the client computer, display data that includes anchor information used for establishing a link with the printing provider computer. When a printing service request button that is correlated with the anchor information on the display is selected, the printing provider computer accepts the printing application, displays an application input screen, and obtains client information. The printing provider computer also obtains a print file, prints the data and transmits the obtained printed material in accordance with the client information.

Abstract: An electronic switching system having ISDN interfaces on the extension side stores in a table the attributes of a terminal under communication using the ISDN interface. When there is another incoming call to the ISDN interface, the system waits for a response to the incoming call by the terminals connected to the ISDN. When no response is received, the switching system creates a disconnection reason message on the basis of the result of checking the terminal attributes in the table against the attributes of the incoming call. This disconnection reason message is then communicated to the calling terminal.

Abstract: A method of manufacturing a photovoltaic device having a plurality of a photoelectric converting regions formed on an insulating surface of a substrate electrically connected in series, comprises the steps of dividing a first large area electrode layer on an insulating surface of a substrate into a plurality of first electrode layer portions corresponding to a plurality of photoelectric converting regions, depositing in succession a film-like photoelectric semiconductor layer and a second electrode layer lying continuously on the divided first electrode layers, and removing portions of the photoelectric semiconductor layer and the second electrode layer formed continuously to divide them into a plurality of portions corresponding to the plurality of the photoelectric converting regions.