Abstract: An imaging unit includes an outermost layer lens, a housing, a vibrator, a piezoelectric element, an inner layer lens, a fixing portion, an imaging element, an imaging control substrate, and a case. The vibrator vibrates the outermost layer lens held by the housing. The piezoelectric element is provided on at least one surface of the vibrator. The case is joined to the housing and houses at least the imaging element and the imaging control substrate. Wiring electrically connected to the piezoelectric element extends from an inside of the housing so as to pass a plane including a mounting surface of the imaging control substrate on which the imaging element is mounted.

Abstract: An optical device includes an outermost layer lens, a housing, a vibrator, an inner layer lens, a fixing portion, and a position adjustment portion. The vibrator vibrates the outermost layer lens held by the housing. The inner layer lens faces the outermost layer lens. The fixing portion fixes the inner layer lens to the housing. The position adjustment portion is provided in the fixing portion to adjust alignment of the inner layer lens with respect to the outermost layer lens. The fixing portion is connected to a portion of the housing that is a node of vibration by the vibrator.

Abstract: A vibration device includes an internal vibration body to amplify a vibration, a piezoelectric element connected to one end of the internal vibration body, and a light transmission body connected to an another end of the internal vibration body. The vibration device further includes an external vibration body including a first connection portion connected to the light transmission body and a second connection portion extending outward of the light transmission body from the first connection portion to attenuate the vibration.

Abstract: An optical module includes a translucent body, a vibrator that is tubular and supports the translucent body, a piezoelectric element located at the vibrator to vibrate the vibrator, and an inner-layer optical component at an inner side portion of the vibrator. The inner-layer optical component includes an inner-layer lens that faces the translucent body, a recess that is recessed in a thickness direction of the inner-layer lens and includes a curvature on a surface of the inner-layer lens facing the translucent body, and a gap is located between the translucent body and the recess of the inner-layer lens.

Abstract: An optical module includes a translucent body, a tubular vibrator supporting the translucent body, a piezoelectric element located at the vibrator to vibrate the vibrator, and an inner-layer optical component at an inner side portion of the vibrator, in which a first gap is located between the translucent body and the inner-layer optical component, a second gap is located between the piezoelectric element and the inner-layer optical component, at least one of a first dimension of the first gap in a vibration direction of the translucent body and a second dimension of the second gap in the vibration direction of the vibrator is in a range of about [(n×?/2)+0.1 mm] or more and about [{(n+1)×?/2}?0.1 mm] or less, and n indicates an integer of 0 or more, and ? indicates a wavelength of an acoustic wave generated by vibration.

Abstract: A vibrating device includes a light transmitting body, a vibrating body with a tubular structure including a first end portion, a second end portion, and a side wall joining the first and second end portions, and connected to the light transmitting body at the first end portion to vibrate the light transmitting body, an extending portion extending outward from the side wall of the vibrating body, and a piezoelectric element at the second end portion of the vibrating body.

Abstract: An optical module includes a translucent portion, a tubular vibrator supporting the translucent portion, a piezoelectric element at the vibrator to vibrate the vibrator, and an inner-layer optical component at an inner side portion of the vibrator. A recess recessed in a thickness direction of the translucent portion and includes a curvature at a surface of the translucent portion facing the inner-layer optical component, the inner-layer optical component includes an inner-layer lens that faces the translucent portion and includes a first portion that protrudes toward the translucent portion and includes a curvature and a second portion at an outer periphery of the first portion, a first gap is located between the first portion and the translucent portion in the outer periphery of the first portion, a second gap is located between the second portion and the translucent portion, and the second gap is larger than the first gap.

Abstract: A combined stripe of a magnetoresistive (MR) film and domain control stripe layers can be formed below a photoresist film on the surface of a substratum. An insulating base layer is then formed to extend over the surface of the substratum. The insulating base layer is allowed to cover over the photoresist film, the magnetoresistive film and the domain control stripe layers on the substratum. When the photoresist film is removed, the insulating base layer remains on the substratum. The insulating base layer keeps contacting the side surface of the magnetoresistive film. The magnetoresistive film can be kept covered with the insulating base layer at the side surface during a subsequent etching process. Any chemical reaction can be avoided between the magnetoresistive film and the etching gas employed in the etching process. The resulting magnetoresistive head element is allowed to exhibit an ideal characteristic in the magnetoresistive effect.

Abstract: A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.

Abstract: Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Abstract: Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Abstract: A flux guide type includes a magnetoresistive device for reading a signal flux, and a flux guide for transmitting the signal flux to the magnetoresistive device. The flux guide includes a laminated film that includes a ferromagnetic layer, a non-magnetic layer and a ferromagnetic layer in this order, and the two ferromagnetic layers in the flux guide have antiparallel directions of magnetization with respect to the non-magnetic layer.

Abstract: A magneto-resistive magnetic sensor has an overlay-type structure and includes a cap layer on a top surface of a magneto-resistive structure and a pair of electrodes provided on said cap layer with a separation from each other, wherein there is interposed an oxidation-resistant conductive film underneath each electrode, such that the oxidation-resistant conductive film is sandwiched between the cap film and the electrode.

Abstract: A flux guide type includes a magnetoresistive device for reading a signal flux, and a flux guide for transmitting the signal flux to the magnetoresistive device, wherein the flux guide includes a laminated film that includes a ferromagnetic layer, a non-magnetic layer and a ferromagnetic layer in this order, and the two ferromagnetic layers in the flux guide have antiparallel directions of magnetization with respect to the non-magnetic layer.

Abstract: A solar cell module according to this invention comprises a front surface member which is transparent, a rear surface member, a plurality of two-side incidence type solar cells sealed between the front surface member and the rear surface member, a connecting member which is conductive for electrically connecting the solar cells in series or in parallel, and a reflecting surface for reflecting light incident from the front surface member to a space between the solar cells which are adjacent each other and for introducing reflected light to a rear surface of the solar cell.

Abstract: A method is disclosed for magnetizing a magnetic system including a ferromagnetic layer magnetized in a first direction and an anti-ferromagnetic layer provided on said ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process including the sub-steps of annealing the magnetic system in a first annealing state, and applying a magnetic field to the magnetic system in a second direction different from the first direction, while maintaining the magnetic system in the first annealing state. A second thermal annealing process includes the sub-steps of annealing the magnetic system after the first thermal annealing process, to a second annealing state, and applying a magnetic field in a third direction different from the second direction while maintaining the magnetic system in the second annealing state.

Abstract: Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Abstract: A combined stripe of a magnetoresistive (MR) film and domain control stripe layers can be formed below a photoresist film on the surface of a substratum. An insulating base layer is then formed to extend over the surface of the substratum. The insulating base layer is allowed to cover over the photoresist film, the magnetoresistive film and the domain control stripe layers on the substratum. When the photoresist film is removed, the insulating base layer remains on the substratum. The insulating base layer keeps contacting the side surface of the magnetoresistive film. The magnetoresistive film can be kept covered with the insulating base layer at the side surface during a subsequent etching process. Any chemical reaction can be avoided between the magnetoresistive film and the etching gas employed in the etching process. The resulting magnetoresistive head element is allowed to exhibit an ideal characteristic in the magnetoresistive effect.

Abstract: A method is disclosed for fabricating a spin-valve magnetic head including a layered body of a first ferromagnetic layer having a first easy axis of magnetization extending in a first direction, a non-magnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer provided on the non-magnetic layer, and an anti-ferromagnetic layer provided on the second ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process with the steps of annealing the layered body in a first annealing state and applying a magnetic field to the layered body in a second direction different from the first direction, while maintaining the layered body in the first annealing state.

Abstract: The invention provides a GMR head in which an adequate bias point may be set for the free magnetic layer 12 of the GMR head by suppressing the static magnetic field in the free magnetic layer which arises from a pinned magnetic layer 14 of the GMR head. The GMR head comprises a sensor section 10, a magnetic field correction section 20 disposed laterally adjacent to the sensor section 10. The sensor section 10 includes, in addition to the free magnetic layer 12 and the pinned magnetic layer 14, an intermediate layer 13 and an anti-ferromagnetic layer 15 in a specific arrangement. The magnetic field correction section 20 may have the same structure as the sensor section 10.