Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: An imaging device includes: a photoelectric converter which converts light into signal charges; a charge accumulation region which is electrically connected to the photoelectric converter, and accumulates the signal charges; a transistor having a gate electrode which is electrically connected to the charge accumulation region; and a contact plug which electrically connects the photoelectric converter to the charge accumulation region, is in direct contact with the charge accumulation region, and comprises a semiconductor material.

Abstract: An imaging device includes: a photoelectric converter which converts light into signal charges; a charge accumulation region which is electrically connected to the photoelectric converter, and accumulates the signal charges; a transistor having a gate electrode which is electrically connected to the charge accumulation region; and a contact plug which electrically connects the photoelectric converter to the charge accumulation region, is in direct contact with the charge accumulation region, and comprises a semiconductor material.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.

Abstract: A CCD 14 is disposed on the rear of the discharge cell structures 13, and light introduced from the discharge cell structures 13 to the rear side, or light leaked from the discharge cell structures 13 to the rear side is measured by the CCD 14. Then, the light amount measurement result outputted from the CCD 14 is quantified, and on the basis of this, the brightness correction is automatically performed.

Abstract: In a semiconductor device according to the present invention, an emitter diffusion layer is formed with a polycrystal silison emitter layer serving as a diffusion source, and an impurity concentration of the polycrystal silicon emitter layer is higher than an impurity concentration of the emitter diffusion layer, wherein the emitter diffusion layer is of a shallow junction and an emitter impurity concentration is increased.