Abstract: A valve timing adjustment device includes a drive-side rotating body that rotates in conjunction with a crankshaft, a driven-side rotating body that rotates integrally with a camshaft, a speed reduction mechanism that transmits rotation while allowing relative rotation between the drive-side rotating body and the driven-side rotating body. The driven-side rotating body includes a fastening portion fastened to the end portion of the camshaft by a center bolt, a bearing portion that is located radially outward of the fastening portion and that axially supports the drive-side rotating body, and a fitting outer surface that is fitted to a regulating member on a side where an outer diameter of an axial contact surface with the other member on one side and the other side in the axial direction of the driven-side rotating body is large.

Abstract: A valve timing adjustment device includes a drive-side rotating body that rotates in conjunction with a crankshaft, a driven-side rotating body that rotates integrally with a camshaft, a speed reduction mechanism that transmits rotation while allowing relative rotation between the drive-side rotating body and the driven-side rotating body. The driven-side rotating body includes a fastening portion fastened to the end portion of the camshaft by a center bolt, a bearing portion that is located radially outward of the fastening portion and that axially supports the drive-side rotating body, and a fitting outer surface that is fitted to a regulating member on a side where an outer diameter of an axial contact surface with the other member on one side and the other side in the axial direction of the driven-side rotating body is large.

Abstract: A fuel injection valve includes a body including a first chamber that supplies fuel of a first pressure, a second chamber that supplies fuel of a second pressure, and an injection hole, a valve chamber member including a valve chamber connectable to the first chamber and the second chamber, a control chamber member including a control chamber connectable to the first chamber, a needle pressed by pressure of fuel in the control chamber in a direction that causes fuel injection from the injection hole to stop, an actuator, a valve element that selectively connects the first chamber, second chamber, and the valve chamber according to the actuator extending and contracting, and a transmission mechanism that when the actuator extends, transmits the force to the needle as a force in a direction that causes fuel to be injected from the injection hole.

Abstract: A fuel injection valve includes a body including a first chamber that supplies fuel of a first pressure, a second chamber that supplies fuel of a second pressure, and an injection hole, a valve chamber member including a valve chamber connectable to the first chamber and the second chamber, a control chamber member including a control chamber connectable to the first chamber, a needle pressed by pressure of fuel in the control chamber in a direction that causes fuel injection from the injection hole to stop, an actuator, a valve element that selectively connects the first chamber, second chamber, and the valve chamber according to the actuator extending and contracting, and a transmission mechanism that when the actuator extends, transmits the force to the needle as a force in a direction that causes fuel to be injected from the injection hole.

Abstract: The present invention relates to an agent for prevention, treatment or inhibition of symptom progression of a pain and/or for control of an analgesic comprising (2R)-2-propyloctanoic acid, a salt thereof or a prodrug thereof, in which an amount per dose is from 1 mg to 5000 mg (preferably from 10 mg to 5000 mg). By administering (2R)-2-propyloctanoic acid, a salt thereof or a prodrug thereof in an amount per dose within the range as described above, a pain, in particular, a neurogenic pain associated with a disease such as cancer pain, postherpetic pain, diabetic pain, HIV-associated neurogenic pain, calculus-induced pain, neuralgia, orofacial pain or hyperalgesia can be remarkably relieved. Moreover, undesirable effects on the living body relating to the use of an analgesic can be relieved.

Abstract: A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined by the first protective film and the conductive layer at least on the ridge base portions.

Abstract: A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions.

Abstract: An agent for the prevention, treatment and/or inhibition of progression of an ophthalmic disease and an agent for the protection of an optic nerve, each of which comprises (2R)-2-propyloctanoic acid or a salt or prodrug thereof in which an amount per dose is from 0.3 ng to 5000 mg. The agents are useful for an ophthalmic disease, such as glaucoma, cataract, retinal detachment, muscae volitantes, age-related macular degeneration, diabetic retinopathy, macular edema, myopia, asthenopia, dry eye, amaurosis fugax, choked disc, papillitis optica, retrobulbar neuritis, toxic amblyopia, optic atrophy, higher visual pathway lesion, internuclear opthalmoplegia, gaze palsy and ischemic optic neuropathy.

Abstract: The present invention relates to an agent for prevention, treatment or inhibition of symptom progression of a pain and/or for control of an analgesic comprising (2R)-2-propyloctanoic acid, a salt thereof or a prodrug thereof, in which an amount per dose is from 1 mg to 5000 mg (preferably from 10 mg to 5000 mg). By administering (2R)-2-propyloctanoic acid, a salt thereof or a prodrug thereof in an amount per dose within the range as described above, a pain, in particular, a neurogenic pain associated with a disease such as cancer pain, postherpetic pain, diabetic pain, HIV-associated neurogenic pain, calculus-induced pain, neuralgia, orofacial pain or hyperalgesia can be remarkably relieved. Moreover, undesirable effects on the living body relating to the use of an analgesic can be relieved.

Abstract: To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section.

Abstract: An agent for treating and/or preventing for diseases (glaucoma, diabetic retinopathy, macular degeneration, retinal vascular obstruction, and the like) due to retinal ischemia, which comprises, as an effective ingredient, (2R)-N-(1-benzylpiperidin-4-yl)-3-cyclohexylmethylthio-2-((4R)-3-t-butoxycarbonylthiazolidin-4-ylcarbonylamino)propanamide represented by the following formula (I): 1

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer.

Abstract: To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.

Abstract: A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer.