Abstract: Provided is a filter capable of suppressing variation in characteristics. A filter has: a plurality of resonators each having a via electrode and a first strip line that is opposed to a first shielding conductor and connected to one end of the via electrode; a first coupling capacitive electrode that has a first comb-shaped electrode including a plurality of first electrodes and that is provided to the first resonator; and a second coupling capacitive electrode that is provided to the second resonator, that has a second comb-shaped electrode including a plurality of second electrodes, and that is formed on the same layer as that of the first coupling capacitive electrode, wherein the first and second electrodes are arranged so as to be adjacent to each other.

Abstract: Provided is a filter capable of suppressing variation in characteristics. A filter has: a plurality of resonators each having a via electrode and a first strip line that is opposed to a first shielding conductor and connected to one end of the via electrode; a first coupling capacitive electrode that has a first comb-shaped electrode including a plurality of first electrodes and that is provided to the first resonator; and a second coupling capacitive electrode that is provided to the second resonator, that has a second comb-shaped electrode including a plurality of second electrodes, and that is formed on the same layer as that of the first coupling capacitive electrode, wherein the first and second electrodes are arranged so as to be adjacent to each other.

Abstract: A first passive part forms a second parallel resonance circuit having a resonance frequency near the passing band among a first to a third parallel resonance circuit as follows. That is, the second parallel resonance circuit is formed at a position farthest from a first shield electrode and farthest from a second shield electrode in a region sandwiched by the first shield electrode and the second shield electrode in a dielectric substrate (in this example, on the main surface of a seventh dielectric layer and the main surface of an eighth dielectric layer located at a center portion in the layering direction of the region).

Abstract: A first passive part forms a second parallel resonance circuit having a resonance frequency near the passing band among a first to a third parallel resonance circuit as follows. That is, the second parallel resonance circuit is formed at a position farthest from a first shield electrode and farthest from a second shield electrode in a region sandwiched by the first shield electrode and the second shield electrode in a dielectric substrate (in this example, on the main surface of a seventh dielectric layer and the main surface of an eighth dielectric layer located at a center portion in the layering direction of the region.