Abstract: A semiconductor device includes: a semiconductor element; a sealing resin; a gate terminal; a drain terminal; a source terminal; a heat dissipation plate electrically connected to the drain, and protruding from a second side intersecting with a first side of the sealing resin in top view; and a heat dissipation plate electrically connected to the drain, and protruding from a third side opposing the second side of the sealing resin in top view. At least a height position of a lower surface of a distal end portion of the heat dissipation plate and a height position of an upper surface of a proximal end portion of the heat dissipation plate or a height position of a lower surface of a distal end portion of the heat dissipation plate and a height position of an upper surface of a proximal end portion of the heat dissipation plate are the same.

Abstract: A switching device includes: a switching element; a die pad; a gate terminal; a first power terminal integral with the die pad; and a second power terminal, the gate terminal, the first power terminal, and the second power terminal are located on a side of a first direction of the die pad, the gate terminal, the first power terminal, and the second power terminal are arranged in a second direction orthogonal to the first direction in the following order: the gate terminal, the first power terminal, and the second power terminal or the second power terminal, the first power terminal, and the gate terminal, the switching element includes a first and a second gate pad, the first gate pad is closer to the gate terminal than the second gate pad is, the second gate pad is closer to the second power terminal than the first gate pad is.

Abstract: In a level shifting circuit, by supplying current to a gate resistor, a bias is applied to a gate of a transistor. Further, current corresponding to the current which flowed through the gate resistor flows through a first current path of a current mirror circuit, and the current mirror circuit functions to supply current corresponding to the current which flowed through the gate resistor to a source of the transistor. Therefore, current corresponding to the current which flowed through the gate resistor is supplied to an output resistor and it is possible to output a voltage in response to a voltage drop related to the supplied current. Therefore, level shifting can be performed to an input signal for outputting.

Abstract: In a level shifting circuit, by supplying current to a gate resistor, a bias is applied to a gate of a transistor. Further, current corresponding to the current which flowed through the gate resistor flows through a first current path of a current mirror circuit, and the current mirror circuit functions to supply current corresponding to the current which flowed through the gate resistor to a source of the transistor. Therefore, current corresponding to the current which flowed through the gate resistor is supplied to an output resistor and it is possible to output a voltage in response to a voltage drop related to the supplied current. Therefore, level shifting can be performed to an input signal for outputting.