Patents by Inventor Hitoshi Matsumura
Hitoshi Matsumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11088118Abstract: According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.Type: GrantFiled: November 30, 2017Date of Patent: August 10, 2021Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Kazuyasu Takimoto, Yuta Ichikura, Toshiharu Ohbu, Hiroaki Ito, Naotake Watanabe, Nobumitsu Tada, Naoki Yamanari, Daisuke Hiratsuka, Hiroki Sekiya, Yuuji Hisazato, Naotaka Iio, Hitoshi Matsumura
-
Publication number: 20200321320Abstract: According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.Type: ApplicationFiled: November 30, 2017Publication date: October 8, 2020Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Kazuyasu TAKIMOTO, Yuta ICHIKURA, Toshiharu OHBU, Hiroaki ITO, Naotake WATANABE, Nobumitsu TADA, Naoki YAMANARI, Daisuke HIRATSUKA, Hiroki SEKIYA, Yuuji HISAZATO, Naotaka IIO, Hitoshi MATSUMURA
-
Publication number: 20180233464Abstract: A semiconductor modules includes insulating substrates having first and second patterns thereon. One terminal plate connects the first patterns and another terminal plate connects the second patterns. A first and a second switching chip are provided on the first pattern. Bonding wires connect the first ans second chips to the second pattern. An insulating plate with an auxillary conductor theron is disposed on the first pattern between the second pattern and both the first and second chips. A first auxiliary connection connect the auxiliary conductor and the second chip and a second auxilliary connection connect thes auxiliary conductor and the second pattern. The auxiliary connections may be, for example, bonding wires or solder connections.Type: ApplicationFiled: August 28, 2017Publication date: August 16, 2018Inventors: Nobumitsu TADA, Hiroaki ITO, Kazuya KODANI, Toshiharu OHBU, Hiroki SEKIYA, Yuuji HISAZATO, Hitoshi MATSUMURA
-
Patent number: 9795049Abstract: A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.Type: GrantFiled: February 19, 2015Date of Patent: October 17, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Nobumitsu Tada, Kazuya Kodani, Hiroaki Ito, Toshiharu Ohbu, Hitoshi Matsumura
-
Patent number: 9481436Abstract: A shift control device of an outboard motor having an electrical shift device for switching a propulsion direction has a rotation switching unit electrically switching whether to drive the outboard motor for regular rotation or for counter rotation, and a rotation determination unit determining whether the outboard motor drives for regular rotation or for counter rotation. Desired performances can be obtained by the outboard motor for regular rotation and the outboard motor for counter rotation without complicating the operation even when the propulsion unit for regular rotation and the propulsion unit for counter rotation are made as a common unit.Type: GrantFiled: June 12, 2013Date of Patent: November 1, 2016Assignee: SUZUKI MOTOR CORPORATIONInventors: Nobuyuki Shomura, Hitoshi Matsumura, Masahiro Nanba
-
Patent number: 9466558Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.Type: GrantFiled: July 31, 2014Date of Patent: October 11, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yo Sasaki, Atsushi Yamamoto, Yuuji Hisazato, Hitoshi Matsumura
-
Patent number: 9347391Abstract: An air-fuel ratio control device has an open loop controller which controls an air-fuel ratio to be a target air-fuel ratio, a feedback controller that shifts the target air-fuel ratio to a logical air-fuel ratio, and feedback controls the air-fuel ratio to be the logical air-fuel ratio by using a feedback correction coefficient determined based on an output of an O2 sensor, an average value calculator that calculates an average value of the feedback correction coefficient when the output of the O2 sensor reverses from a lean side to a rich side and from the rich side to the lean side in a feedback control by the feedback controller, and a learned value calculator that calculates a learned value based on the average value at a time when the average value calculated by the average value calculator becomes substantially constant.Type: GrantFiled: November 28, 2012Date of Patent: May 24, 2016Assignee: SUZUKI MOTOR CORPORATIONInventors: Masahiro Nanba, Tomohiko Miyaki, Hitoshi Matsumura
-
Publication number: 20160057881Abstract: A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.Type: ApplicationFiled: February 19, 2015Publication date: February 25, 2016Inventors: Nobumitsu Tada, Kazuya Kodani, Hiroaki Ito, Toshiharu Ohbu, Hitoshi Matsumura
-
Publication number: 20150360762Abstract: A shift control device of an outboard motor having an electrical shift device for switching a propulsion direction has a rotation switching unit electrically switching whether to drive the outboard motor for regular rotation or for counter rotation, and a rotation determination unit determining whether the outboard motor drives for regular rotation or for counter rotation. Desired performances can be obtained by the outboard motor for regular rotation and the outboard motor for counter rotation without complicating the operation even when the propulsion unit for regular rotation and the propulsion unit for counter rotation are made as a common unit.Type: ApplicationFiled: June 12, 2013Publication date: December 17, 2015Applicant: SUZUKI MOTOR CORPORATIONInventors: Nobuyuki SHOMURA, Hitoshi MATSUMURA, Masahiro NANBA
-
Publication number: 20150262959Abstract: A semiconductor device includes a substrate joined to a base by a first junction material and a semiconductor element joined to the substrate by a second junction material. At least one of the first and second junction materials comprises tin, antimony, and cobalt. In some embodiments, the junction materials comprise cobalt having a weight percentage between 0.05 wt % and 0.2 wt %, antimony with a weight percentage between 1 wt % and 10 wt %, and the balance being substantially tin.Type: ApplicationFiled: September 2, 2014Publication date: September 17, 2015Inventors: Yuuji HISAZATO, Kazuya KODANI, Yo SASAKI, Daisuke HIRATSUKA, Hitoshi MATSUMURA, Hideaki KITAZAWA, Nobumitsu TADA, Hiroki SEKIYA
-
Publication number: 20150249046Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.Type: ApplicationFiled: July 31, 2014Publication date: September 3, 2015Inventors: YO SASAKI, Atsushi Yamamoto, Yuuji Hisazato, Hitoshi Matsumura
-
Patent number: 9123704Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.Type: GrantFiled: March 11, 2014Date of Patent: September 1, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yo Sasaki, Yuuji Hisazato, Kazuya Kodani, Atsushi Yamamoto, Hitoshi Matsumura
-
Publication number: 20150244191Abstract: This battery monitoring system quickly and accurately grasps the position of a monitoring device that monitors battery packs when an abnormality occurs in the monitoring device. The battery monitoring system is equipped with a comparison unit and a change unit. When a battery management unit (BMU) which acquires, from each of a plurality of cell monitoring units (CMUs) that monitor a plurality of battery packs provided with at least one secondary battery cell, battery state information for the associated battery pack, activates a particular CMU according to a predetermined sequence, the comparison unit compares the sequence number representing the sequence in which the CMU was activated with an identification number assigned to the CMU acquired from the CMU. If the sequence number and the identification number differ, the change unit changes the identification number to the same number as the sequence number, and outputs the new identification number.Type: ApplicationFiled: November 19, 2013Publication date: August 27, 2015Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hitoshi Matsumura, Akira Takeyama
-
Publication number: 20150076699Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.Type: ApplicationFiled: March 11, 2014Publication date: March 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yo Sasaki, Yuuji Hisazato, Kazuya Kodani, Atsushi Yamamoto, Hitoshi Matsumura
-
Publication number: 20150078414Abstract: According to one embodiment, in a method of testing a semiconductor device, the semiconductor device has a semiconductor element and a substrate which are bonded by bonding material including metal fine particles. Image data of a heat distribution in the semiconductor device are temporally acquired while heating the semiconductor device. A time change of a fractal dimension based on the image data is calculated. An inclination of the time change of the fractal dimension is calculated. The inclination and a reference inclination set in advance are compared. Whether or not the semiconductor device is good is determined.Type: ApplicationFiled: March 3, 2014Publication date: March 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuji Hisazato, Kazuya Kodani, Yo Sasaki, Daisuke Hiratsuka, Hitoshi Matsumura, Hideaki Kitazawa, Kenji Adachi
-
Publication number: 20150076516Abstract: According to one embodiment, a semiconductor device includes a semiconductor element and a metal film. The semiconductor element has a first surface and a second surface opposite to the first surface. The metal film is provided above the second surface of the semiconductor element. The metal film includes Cr.Type: ApplicationFiled: March 10, 2014Publication date: March 19, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Yuuji Hisazato, Hiroki Sekiya, Yo Sasaki, Kazuya Kodani, Nobumitsu Tada, Hitoshi Matsumura, Tomohiro Iguchi
-
Patent number: 8957522Abstract: According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.Type: GrantFiled: March 6, 2013Date of Patent: February 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yo Sasaki, Daisuke Hiratsuka, Atsushi Yamamoto, Kazuya Kodani, Yuuji Hisazato, Hitoshi Matsumura
-
Publication number: 20140284797Abstract: A method for fabricating a power semiconductor device that comprises a base substrate with a conductive layer on a surface of the base substrate and semiconductor components mounted on the base substrate includes forming a hardened layer on the surface of the conductive layer before mounting a semiconductor component on the base substrate. The forming of the hardened layer may optionally be performed using a peening process, for example, a shot peening process, a laser peening process, or an ultrasonic peening process. The conductive layer may comprise a metal such as, for example, aluminum or copper.Type: ApplicationFiled: September 3, 2013Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuji HISAZATO, Hiroki SEKIYA, Yo SASAKI, Kazuya KODANI, Nobumitsu TADA, Hitoshi MATSUMURA, Tomohiro IGUCHI
-
Patent number: D949862Type: GrantFiled: August 27, 2020Date of Patent: April 26, 2022Assignee: MITSUBISHI POWER, LTD.Inventors: Yuichi Yakushiji, Koji Ikeda, Tadayuki Mizoguchi, Toshiki Matsuoka, Yoshikane Yamanaka, Kenji Umino, Takashi Shigemitsu, Yoshinari Shirasaka, Shinichi Yamawaki, Hitoshi Matsumura, Kazuya Kanno, Yusuke Oobu
-
Patent number: D950558Type: GrantFiled: August 27, 2020Date of Patent: May 3, 2022Assignee: MITSUBISHI POWER, LTD.Inventors: Yuichi Yakushiji, Koji Ikeda, Tadayuki Mizoguchi, Toshiki Matsuoka, Yoshikane Yamanaka, Kenji Umino, Takashi Shigemitsu, Yoshinari Shirasaka, Shinichi Yamawaki, Hitoshi Matsumura, Kazuya Kanno, Yusuke Oobu