Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a first substrate provided with a first peripheral circuit having a function of driving a first memory cell and a first memory cell layer including a second substrate and a first element layer including the first memory cell. The first memory cell includes a first transistor and a first capacitor. The first transistor includes a semiconductor layer including a metal oxide in its channel formation region. The first memory cell layer is provided to be stacked over the first substrate in a direction perpendicular or substantially perpendicular to a surface of the first substrate. The second substrate includes a circuit for performing writing of data to or reading of data from the first memory cell. The first peripheral circuit and the first memory cell are electrically connected to each other through a first through electrode provided in the second substrate and the first element layer.

Abstract: An inspection apparatus of an embodiment includes a rotor image-pickup unit for picking up an image of a rotor using a rotor image-pickup device in the air gap between the rotor and a stator. The rotor image-pickup device includes: a carriage casing; a camera; an image-pickup position changing part; and an image-pickup direction changing part. The camera is installed in the carriage casing, and picks up an image of a ventilation hole of the rotor in the air gap. The image-pickup position changing part is installed in the carriage casing, and changes an image-pickup position of the camera by moving the carriage casing in a circumferential direction of the rotor in the air gap. The image-pickup direction changing part is installed in the carriage casing, and changes an image-pickup direction of the camera to an inclined angle to a radial direction of the rotor in the air gap.

Abstract: Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 ?m or less.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 ?m or more and a maximum height (Rz) of 20 ?m or more at a sputtering surface thereof.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax?Dave)/Dave×100(%) B1=(Dave<Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %?1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax?Dave)/Dave×100(%) B1=(Dave?Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.

Abstract: A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (Xa) is the same at the four measurement positions, and variations in strength ratio (Xb/Xa) between the highest crystal orientation strength (Xa) and the second highest crystal orientation strength (Xb) is 20% ore less.

Abstract: The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %?1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Abstract: The present invention provides a sputtering target in which an occurrence of target cracks can be inhibited. The sputtering target of the invention relates to a sputtering target produced by mixing and sintering a main powder containing In as a main component, which is obtained by pulverizing an ingot consisting of an intermetallic compound, and a sub-powder containing a different component composition from the above-mentioned main powder, wherein a total content of Si, Al and Fe which are unavoidable impurities is 300 ppm by mass or less. Further, the intermetallic compound contains In and at least one selected from Co and Ni.

Abstract: Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size dave of the sputtering face of the Ag-based sputtering target is measured in accordance with the procedures 1-3 described below, the average grain size dave satisfies 10 ?m or less. (Procedure 1) In the surface of the sputtering face, a plurality of locations are optionally selected, and a micrograph (magnification: 40-2,000 times) of each selected location is taken. (Procedure 2) Four or more straight lines are drawn in a grid pattern or radially on each micrograph, a number n of grain boundaries existing on the straight line is investigated, and a grain size d is calculated on the basis of the following equation on each straight line. d=L/n/m where, L represents the length of the straight line, n represents the number of the grain boundaries existing on the straight line, and m represents the magnification of the micrograph.

Abstract: A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed, (1) the ratio of the total area of Ta particles having a circle equivalent diameter of from 10 ?m or more to 50 ?m or less, to the total area of all Ta particles, is 60% or more, and the average distance between the centers of gravity of Ta particles is from 10 ?m or more to 50 ?m or less; and (2) the ratio of the total area of Cu particles having a circle equivalent diameter of from 10 ?m or more to 50 ?m or less, to the total area of all Cu particles, is 70% or more, and the average distance between the centers of gravity is from 60 ?m or more to 120 ?m or less.

Abstract: The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 ?m or more and a maximum height (Rz) of 20 ?m or more at a sputtering surface thereof.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.

Abstract: A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (Xa) is the same at the four measurement positions, and variations in strength ratio (Xb/Xa) between the highest crystal orientation strength (Xa) and the second highest crystal orientation strength (Xb) is 20% ore less.