Abstract: A semiconductor manufacturing apparatus is provided with a gas injection nozzle as a member made of aluminum nitride ceramics free from ittria (Y2O3) as a sintering agent. Since no ittrium (Y) is deposited on a surface of the nozzle, preferentially fluorinated portions are decreased. Therefore, adhesion with a precoating film is improved to thereby suppress generation of particles during deposition. Since the readily fluorinated portions are reduced, fluorination of the entire nozzle can be suppressed to thereby lengthen the life of the member. It is therefore possible to provide the semiconductor manufacturing apparatus capable of achieving a high operation rate and a high semiconductor production yield.