Patents by Inventor Hitoshi SAI

Hitoshi SAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and solar cell and production method for semiconductor device
    Patent number: 12125926
    Abstract: The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: October 22, 2024
    Assignee: National institute of Advanced Industrial Science and Technology
    Inventors: Takuya Matsui, Hitoshi Sai
  • SEMICONDUCTOR DEVICE AND SOLAR CELL AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
    Publication number: 20220262964
    Abstract: The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.
    Type: Application
    Filed: June 25, 2020
    Publication date: August 18, 2022
    Inventors: Takuya MATSUI, Hitoshi SAI