Abstract: A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant ? can be formed speedily.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A rotary base having first and second surfaces on which display panels are to be placed, and a rotation shaft. The first and second surfaces can be switched between a front position (facing position) and a top position facing upward. A fixture base supports the rotary base to be rotatable about the rotation shaft. A Z-axis drive mechanism moves the fixture base forward to a predetermined position and backward to be retreated from the predetermined position. When the fixture base is moved to the predetermined position by the Z-axis drive mechanism, a probe unit is connected to the display panel.

Abstract: A rotary base having first and second surfaces on which display panels are to be placed, and a rotation shaft. The first and second surfaces can be switched between a front position (facing position) and a top position facing upward. A fixture base supports the rotary base to be rotatable about the rotation shaft. A Z-axis drive mechanism moves the fixture base forward to a predetermined position and backward to be retreated from the predetermined position. When the fixture base is moved to the predetermined position by the Z-axis drive mechanism, a probe unit is connected to the display panel.

Abstract: An electrode pattern (3) of an electrostatic chuck (100) includes linear portions (31a, 31b) in a radial direction and a plurality of [i]concentric C-shaped portions (32a, 32b) branching out from the linear portions (31a, 31b). The linear portions are disposed opposite to each other in a diametrical direction and are roughly in a straight line. The C-shaped portions (32a, 32b) are in the form of concentric circles and these concentric circles are engaged alternately like teeth of a comb.

Abstract: A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas to react them, thereby forming a boron nitride film 15 on a substrate 4. At the initial stage of film formation, the nitrogen gas 11 is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film 15 improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

Abstract: An interlayer dielectric multilayer film is formed by providing a boron nitride film as a protective film 34 between interlayer dielectric films 33 with a low relative dielectric constant which comprise organic coated films or porous films. The interlayer dielectric films 34 having a low relative dielectric constant are combined with the boron nitride film excellent in mechanical and chemical resistance, high in thermal conductivity and having a low relative dielectric constant, thereby achieving a low relative dielectric constant, while maintaining adhesion and moisture absorption resistance.

Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.

Abstract: A carbon material for electric double layer capacitor electrodes which is obtained by a heat treatment and an activation treatment of a material pitch having a softening point in a range of 150 to 350° C., a ratio of amounts by atom of hydrogen to carbon (H/C) in a range of 0.50 to 0.90 and a content of optically anisotropic components of 50% or greater. The material pitch is preferably a synthetic pitch obtained by polymerizing a condensed polycyclic hydrocarbon such as naphthalene, methylnaphthalene, anthracene, phenanthrene, acenaphthene, acenaphthylene and pyrene in the presence of an ultra-strong acid catalyst such as a hydrogen fluoride-boron trifluoride complex. Electric double layer capacitors having a high electrode density and a high electrostatic capacity per unit volume can be constructed using the carbon material.

Abstract: A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas, and evaporated carbon obtained by controlled heating of a winding-shaped carbon heater 14a, to react them, thereby forming a boron carbonitride film 15 on a substrate 4. Thus, the boron carbonitride film 15 excellent in moisture absorption resistance, excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant &kgr; can be formed stably with good adhesion, and speedily over a uniform large area, regardless of the type of the film.

Abstract: A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant &kgr; can be formed speedily.

Abstract: Provided are a hexagonal boron nitride film having a specific inductance of 3.0 or less, a hexagonal boron nitride film wherein the total content of the bonds between a nitrogen atom and a hydrogen atom and between a boron atom and a hydrogen atom is 4 mol % or less, a hexagonal boron nitride film in which a spacing in the c-axis direction is extended by 5 to 30% but the extension of a spacing in the a-axis direction is limited within 5% and a hexagonal boron nitride film in which the direction of the c-axis is parallel to a substrate. There is also provided a layer dielectric film using each of these hexagonal boron nitride films. Also, there is also provided a method of producing a hexagonal boron nitride film by using an ion deposition method.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.

Abstract: A metal film production apparatus and method supply a source gas containing chlorine, as a halogen, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Abstract: A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

Abstract: A carbonaceous material for use as an anode material in secondary batteries using non-aqueous solvent comprises a material obtained by calcining a solid, the solid, in turn, being obtained by heating tar and/or pitch with furfural in the presence of an acid catalyst, the use of the resulting anode material imparting to the battery a relatively large capacity while having only a small irreversible capacity loss in the first cycle.