Abstract: A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type.

Abstract: A solar cell module 100 comprises a light reflection member 12 placed on the light receiving surface of a n-type semiconductor substrate 11 and having a light reflecting surface 12A facing the light receiving surface protection member 2. The light reflection member 12 is positioned on an opposite side to the n-side connecting electrode 14n across the n-type semiconductor substrate 11.

Abstract: In a solar cell comprising a semiconductor substrate 11 and a i-type amorphous semiconductor layer 12 formed on a back surface of the semiconductor substrate 11, the i-type amorphous semiconductor layer 12 includes an exposed portion 12A exposed in a planer view, and a covered portion 12B covered with each of the p-type semiconductor layer 13 and the n-type semiconductor layer 14. A thickness T1 of the exposed portion 12A is less than a thickness T2 of the covered portion 12B.

Abstract: An aspect of the invention provides a solar cell that comprises: a semiconductor substrate including a light-receiving surface and a back surface that is disposed at the opposite side from the light-receiving surface; a first conductivity type semiconductor region having a first conductivity type and formed on the back surface, the first conductivity type semiconductor region is a region that a first dopant is doped into the semiconductor substrate by laser radiation, wherein the first conductivity type semiconductor region is a region formed to extend in a direction that intersects cleavage planes of the semiconductor substrate; and a second conductivity type semiconductor region having a second conductivity type that is different from the first conductivity type and formed on the back surface.

Abstract: A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.

Abstract: This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

Abstract: This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

Abstract: In a laminated heat exchanger with a pair of tank portions formed at one side of each tube element and intake/outlet portions for heat exchanging medium provided at one end in the direction of the lamination or in the direction running at a right angle to the direction of the lamination, a constricting portion for limiting the flow passage cross section is provided in an area in the tank portions where the flow shifts from an even-numbered pass to an odd-numbered pass in a plurality of passes. This allows the heat exchanging medium to flow in sufficient quantities into the tube elements near the outlet side of the partitioning portion, preventing inconsistency in temperature distribution. This constricting portion, which is formed in the tank group opposite the tank group where the partitioning portion is provided, is provided at the same lamination position as the partitioning portion. The constricting portion may be also formed with a plurality of holes.

Abstract: In a laminated heat exchanger with a pair of tank portions formed at one side of each tube element and intake/outlet portions for heat exchanging medium provided at one end in the direction of the lamination or in the direction running at a right angle to the direction of the lamination, a constricting portion for limiting the flow passage cross section is provided in an area in the tank portions where the flow shifts from an even-numbered pass to an odd-numbered pass in a plurality of passes. This allows the heat exchanging medium to flow in sufficient quantities into the tube elements near the outlet side of the partitioning portion, thereby avoiding inconsistency in temperature distribution. This constricting portion, which is formed in the tank group opposite the tank group where the partitioning portion is provided, is provided at the same lamination position as the partitioning portion. The constricting portion may be also formed with a plurality of holes.

Abstract: A photovoltaic element includes a collecting electrode formed via a transparent conductive film on a semiconductive layer having a semiconductor junction, wherein a conductive film is disposed on the collecting electrode. A modular structure is adopted in which a plurality of photovoltaic elements having such a structure are connected in series via a tab soldered onto the conductive film. On a light-transmission side, a conductive film is disposed to cover an entire surface of the transparent conductive film. This conductive film is allowed to act as a reflection film on a back surface side. A screen printing process is repeated for a plural number of times so that the collecting electrode is formed with a flattened surface.