Abstract: A magnetic disk tester has a head clamp (35, 218) to position a magnetic head (15, 289). The head clamp has a micromotion stage (55, 273) provided with a stage (59, 205) which is horizontally moved by a piezo-element (77). The magnetic head is attached to the piezo-stage (55, 273).

Abstract: A high frequency ceramic compact includes Al, Ti and Mn as metallic elements and contains substantially no Al2TiO5 phase as determined by X-ray diffraction analysis and is obtained by firing at about 1310C or lower. A preferred high frequency ceramic compact is represented by the following formula and has a Q-value at 10 GHz of 10,000 or more: (100−x−y)AlO3/2−xTiO2−yMnO, wherein x and y are % by mole and x and y satisfy the following conditions: 3.0≦x≦9.0; and 0.1≦y≦1.0. These high frequency ceramic compacts have a relative dielectric constant of 20 or less, a Q-value at 10 GHz of 10,000 or more, and can optionally control the temperature coefficient of resonant frequency around 0 ppm/° C.

Abstract: A high-frequency dielectric ceramic composition comprises a perovskite crystal phase. The composition contains a rare earth element Ln, aluminum, calcium, zinc, M and titanium wherein M is at least one of niobium and tantalum, and is represented by the formula: (1−y)xCaTiaO1+2a−(1−y)(1−x)Ca(Zn⅓M⅔)bO1+2b−yLnAlcO(3+3c)/2 wherein x and y represent molar ratios. The parameters x, y, (1−y)x, a, b, and c satisfy the relationships: 0.56≦x≦0.8, 0.08≦y≦0.18, (1−y)x≦0.65, 0.985≦a≦1.05, 0.9≦b≦1.02, and 0.9≦c≦1.05. Zinc may be partly replaced with magnesium. The composition is suitable for use in high-frequency devices.

Abstract: A piezoelectric ceramic composition and a piezoelectric element in which cracks and chips are not likely to occur during working even if the thicknesses are reduced, are provided. The piezoelectric ceramic composition contains as a primary component, a complex oxide having a perovskite structure, composed of at least Pb, Zr, Ti, Mn, Nb and O, and represented by general formula ABO3, in which the total molar quantity of elements constituting A is smaller than the total molar quantity of elements constituting B, and Si is present as a secondary component at the content of about 0.010 wt % to 0.090 wt %, in terms of SiO2, relative to the primary component.

Abstract: High frequency dielectric ceramic compositions having a dielectric constant (∈r) of 30 to 50, a Q value of 15,000 or more at 1 GHz, and a temperature-dependent factor of resonant frequency (&tgr;f) which can be arbitrarily controlled centering around 0 (ppm/° C.) have a main crystal of the perovskite type crystal phase by (1−x)MeTiaO1+2a—xLn(Ma1/2Mb1/2)bO(3+3b)/2, wherein Ln is a rare earth element, Ma is at least one of Mg and Zn, Mb is at least one of Sn and Zr, Me is at least one of Ca and Sr, x is the mole fraction, and 0.95≦a≦1.05, 0.9≦b≦1.05 and 0.3≦x≦0.5.

Abstract: A dielectric ceramic for high frequency having a composition represented by the formula:

Abstract: A high-frequency dielectric ceramic compact is provided which has a relative dielectric constant (∈r) of about 20 or less and a Q value of about 20,000 or more at 1 GHz, in which the temperature coefficient (&tgr;f) can be optionally controlled at about 0 (ppm/° C.). When the compact of the dielectric ceramic compact is represented by the formula aBaO.bMeO.cSbO3/2, 0.476≦a≦0.513, 0.160≦b≦0.175, and 0.324≦c≦0.350. In addition, when the compact of the dielectric ceramic compact is represented by the formula dBaO.eMeO.fSbO3/2.gTiO2, 0.476≦d≦0.513, 0.100≦e≦0.175, 0.200≦f≦0.349, and 0<g≦0.200.

Abstract: The present invention provides a high-frequency dielectric ceramic composition having both high dielectric constant (∈r) and high Q value, and excellent temperature stability of the resonance frequency. The high-frequency dielectric ceramic composition contains a rare earth element (Ln), Mg, Ta, Ti and M (M is at least one of Ca and Sr) and has a composition represented by the composition formula aLnOx/2-bMgO-cTaO5/2-dMO-eTiO2, wherein a, b, c, d, e and x are mol % in the ranges of 0.100≦a≦0.350, 0.067≦b≦0.233, 0.033≦c≦0.117, 0.150≦d≦0.400, 0.150≦e≦0.400, a+b+c+d+e=1, and 3≦x≦4, respectively.

Abstract: An information processing system has a main memory unit, an expanded memory unit, and an instruction processing unit producing a virtual address. An address translation table, namely, a page table stores page table words which include main/expanded memory presence bits indicating to which memory unit of the main memory unit and the expanded memory unit real pages are stored. Preferably, the instruction processing unit may include an access type determiner for determining an access type for at least one operand. The access type indicates which memory unit is the optimum one for the operand. Instead of the access type determiner, the instruction processing unit may include segment descriptor registers for storing segment descriptors having expanded memory bits indicating which memory units are the optimum ones for the segments.

Abstract: The input/output interruption control system comprises a plurality of instruction processors, a plurality of virtual machines, a control program for activation and control of the virtual machines, an input/output processor which activates input/output operation, and a memory (4) for interruption information storing.

Abstract: A technique for handling an interrupt request issued from an I/O (Input/Output) device controller in a data processing system which is operative in a virtual machine mode in which two flags are provided, the first one of which is set to an "on" state in the case where a CPU (Central Processing Unit) is utilized as a master unit and is set to "off" state in the case where the CPU is utilized as a slave unit. The second flag is set to an "on" state in the case where the CPU is utilized as the master unit and is able to accept the interrupt request directed to a guest OS (Operating System). A first logic gate is arranged to issue a logical product of the output of the first flag and one of the outputs of the I/O device controller. A second logic gate is provided to issue a logical product of the output of the second flag and another of the outputs of the I/O device controller. Further, a third logic gate is arranged to issue a logical sum of the outputs of the first and second gates.

Abstract: In an address translation device (11) used in combination with a main memory (12) in translating an input virtual address into an output real address, an address translation buffer (15) is for memorizing not only a plurality of buffer virtual addresses (BVA) and a plurality of buffer real addresses (BRA) corresponding to respective buffer virtual addresses but also buffer presence bits (BP) corresponding to respective buffer real addresses to indicate presence or absence of a datum of a memory real address in the main memory in correspondence to each of the buffer real addresses. A comparison control circuit (17) compares the input virtual address with a particular one of the buffer virtual addresses, that corresponds to the input virtual address to make the address translation buffer produce, as the output real address, a particular one of the buffer real addresses, which corresponds to the particular buffer virtual address when the input virtual address coincides with the particular buffer virtual address.

Abstract: A structure for mounting a vibratory body on a support includes an elongated mounting member having an elasticity. The mounting member is resiliently connected to the support and also to the vibratory body. The connection of the mounting member to the support is located at a position at which the phase of bounce-mode vibrations of the mounting member is opposite in sign to that of two-node-mode transverse vibrations of the mounting member.

Abstract: An apparatus for regenerating original signals comprising: means for introducing a first signal that is produced as an original signal passes through a system that cuts off predetermined frequencies; a first circuit means which produces a third signal obtained on an open loop responsive to said first signal and a second signal which is regenerated from a signal of a predetermined frequency that is cut off by said system; and a second circuit means which regenerates the original signal by converting said third signal into a binary signal.

Abstract: A method for effectively treating waste water discharged from the ammoxidation process for the production of acrylonitrile which comprises treating waste water or a preliminary oxidized liquid of said waste water with activated carbon in an adsorption and separation zone, subjecting the spent carbon slurry from said adsorption and separation zone to wet oxidation in the presence of copper values and ammonium ions at a pH of not higher than 5 in a regeneration zone to thereby regererate the spent carbon, and recycling the regenerated activated carbon to said adsorption and separation zone. The rate of regeneration of the spent carbon in the regeneration zone can be further increased by adjusting the amount of copper values to at least 1,000 ppm. Thus, the waste water containing extremely hardly decomposable substances can be effectively treated and, at the same time, the spent carbon can be regenerated with less degradation of adsorption capacity.

Abstract: A method of simultaneously removing sulfur dioxide and nitrogen oxides from an exhaust gas which comprises the steps of:contacting the exhaust gas with an aqueous absorbing solution containing an iron chelate complex and an alkali metal sulfite to form alkali metal sulfur oxides comprising an alkali metal dithionate in the aqueous absorbing solution;separating the alkali metal sulfur oxides formed and accumulated from part or the whole of the aqueous absorbing solution by crystallization; andsubjecting the alkali metal sulfur oxides separated together with a carbonaceous material to decomposition-reduction reaction at a temperature of at least about 700.degree. C. to form an alkali metal sulfide and a gas comprising sulfur dioxide and carbon dioxide.

Abstract: In wet-oxidizing organic waste water containing cyanogen i.e. inorganic-CN, or a compound capable of forming cyanogen under oxidative conditions, if the wet oxidation is conducted in the presence of copper or a copper compound and a specific ammonium salt, COD and the cyanogen concentration can be reduced at highly improved removal ratios. Copper ions resulting from the copper component made present at the wet oxidation step can be effectively removed by precipitation or ion exchange. Accordingly, this treatment method does not cause secondary pollution at all. In case recovery of the copper ions is performed by ion exchange, good results are obtained when the oxidized liquid from the wet oxidation step is flashed at a temperature higher than 100.degree. C. and the pH of the oxidized liquid is adjusted to 4-7 after the cyanogen decomposition step but before the ion exchange treatment. A weakly acidic ion exchange resin is preferably employed.

Abstract: A method of removing NO.sub.x and SO.sub.2 from an exhaust gas containing NO.sub.x and SO.sub.2 which comprises contacting an exhaust gas containing NO.sub.x and SO.sub.2 with an aqueous solution containing M.sub.2 SO.sub.3, an iron ion and an aminopolycarboxylic acid to absorb NO.sub.x and SO.sub.2 in the aqueous solution and treating the resulting absorbing solution while preventing a contact of the solution with the exhaust gas, thereby to form M.sub.2 S.sub.2 O.sub.6 in the absorbing solution and reducing NO.sub.x to N.sub.2. The M.sub.2 S.sub.2 O.sub.6 formed in the absorbing solution can be easily removed by crystallization separation. With such method, NO.sub.x and SO.sub.2 can be removed from exhaust gases at high rates and the absorbing solution can be easily regenerated and recycled to the absorbing zone.

Abstract: A method for removing nitrogen monoxide effectively from a nitrogen monoxide-containing gas which comprises contacting a nitrogen monoxide-containing gas with an aqueous solution containing a ferrous ion complex formed from a ferrous ion and an organic compound of 2 to 24 carbon atoms having in the molecule at least one atomic group selected from mercapto, amino, imino and nitrilo groups. When a sulfite or sulfide is present in the above aqueous solution, the nitrogen monoxide-absorbing capacity of the aqueous solution can be enhanced and nitrogen monoxide absorbed in the aqueous solution is reduced to non-toxic nitrogen. According to this method, nitrogen monoxide can be removed effectively, even if the gas to be treated contains an oxidizing substance such as oxygen.