Abstract: In a plasma processing apparatus using a circularly polarized wave, in order to reduce an influence caused by a reflected wave and to efficiently utilize a circularly polarized wave for a plasma process, the plasma processing apparatus includes a microwave source configured to generate a microwave, a plasma processing chamber configured to process a processing target disposed therein by using plasma generated by the microwave, and a waveguide portion that includes a rectangular waveguide connected to the microwave source and a circular waveguide connected to the plasma processing chamber, and the plasma processing apparatus is further provided with, inside the circular waveguide, a reflected wave generator configured to generate a reflected wave that cancels a reflected wave propagating in the circular waveguide from a plasma processing chamber side in a state where the plasma is generated inside the plasma processing chamber by the microwave.

Abstract: A sorbent breather filter for an electronic device such as a hard disk drive (HDD) is configured with a first chamber for housing a first sorbent and environmentally coupled with an external environment via at least a first orifice and a second orifice, a corresponding replaceable first sorbent such as zeolite or silica gel beads in the first chamber, a second chamber adjacent to the first chamber for housing a second sorbent, and a corresponding second sorbent such as carbon beads in the second chamber. The first orifice is a through-hole such that the first sorbent can be loaded into the first chamber therethrough, and the second orifice is a slitted or grated hole such that the first sorbent cannot move from the first chamber to the external environment through the second orifice while loading sorbent into the first chamber through an HDD first cover breather hole.

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Abstract: A sorbent breather filter for an electronic device such as a hard disk drive (HDD) is configured with a first chamber for housing a first sorbent and environmentally coupled with an external environment via at least a first orifice and a second orifice, a corresponding replaceable first sorbent such as zeolite or silica gel beads in the first chamber, a second chamber adjacent to the first chamber for housing a second sorbent, and a corresponding second sorbent such as carbon beads in the second chamber. The first orifice is a through-hole such that the first sorbent can be loaded into the first chamber therethrough, and the second orifice is a slitted or grated hole such that the first sorbent cannot move from the first chamber to the external environment through the second orifice while loading sorbent into the first chamber through an HDD first cover breather hole.

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Abstract: A plasma processing apparatus includes: a vacuum chamber that includes a plasma processing chamber in which a substrate is to be plasma-processed and that can exhaust an inside of the plasma processing chamber to vacuum; and a microwave power supply unit that supplies a microwave power to the vacuum chamber via a circular waveguide. The vacuum chamber includes: a parallel flat plate line portion that is connected to the circular waveguide and receives a microwave power propagated from the circular waveguide; a ring resonator unit that is disposed on an outer periphery of the parallel flat plate line portion and receives the microwave power propagated from the parallel flat plate line portion; a cavity portion that receives a microwave power radiated from a slot antenna formed in the ring resonator unit; and a microwave introduction window that separates the cavity portion from the plasma processing chamber.

Abstract: In order to provide a plasma processing apparatus capable of easily controlling a plasma density distribution on a processing target substrate, a plasma processing apparatus includes: a microwave generating source; a waveguide path including waveguides that transmit a microwave generated by the microwave generating source to a processing chamber; the processing chamber that includes therein a placing table for placing the processing target substrate and is connected to the waveguide path; a gas introduction unit that introduces gas into the processing chamber; and an exhaust unit that discharges the gas introduced into the processing chamber to the outside of the processing chamber, in which a portion of the waveguide path connected to the processing chamber includes a plurality of waveguides formed coaxially.

Abstract: A fuel cell separator includes a separator main body having a first surface and a second surface, and a first seal member disposed on the first surface. When a region on the first surface of the separator main body corresponding to an electrode member disposed on the second surface is defined as a power generation region, and a region on the first surface of the separator main body corresponding to an in-cell seal member is defined as a seal region, a displacement/vibration reducing member made of polymer is disposed at a part of the seal region. The displacement/vibration reducing member includes multiple protrusions and a coupling portion. When viewed in plan view, an axis line connecting the centers of the figures of the adjacent protrusions does not coincide with a center line passing through the widthwise center of the coupling portion. The coupling portion has a gate cut mark.

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Abstract: The three-dimensional measuring method includes: a conveying step of conveying a workpiece to be measured by a robot arm configured to change an attitude of the workpiece; a measuring step of performing three-dimensional measurement on the workpiece by a probe configured to be movable relative to the surface plate in a state in which the workpiece is held by the robot arm; a relative-position change detecting step of detecting a change in a relative position between the surface plate and the robot arm; and a vibration correcting step of correcting a result of the measurement performed on the workpiece in the measuring step based on a result of detection performed in the relative-position change detecting step.

Abstract: The three-dimensional measuring method includes: a conveying step of conveying a workpiece to be measured by a robot arm configured to change an attitude of the workpiece; a measuring step of performing three-dimensional measurement on the workpiece by a probe configured to be movable relative to the surface plate in a state in which the workpiece is held by the robot arm; a relative-position change detecting step of detecting a change in a relative position between the surface plate and the robot arm; and a vibration correcting step of correcting a result of the measurement performed on the workpiece in the measuring step based on a result of detection performed in the relative-position change detecting step.

Abstract: A fuel cell separator includes a separator main body having a first surface and a second surface, and a first seal member disposed on the first surface. When a region on the first surface of the separator main body corresponding to an electrode member disposed on the second surface is defined as a power generation region, and a region on the first surface of the separator main body corresponding to an in-cell seal member is defined as a seal region, a displacement/vibration reducing member made of polymer is disposed at a part of the seal region. The displacement/vibration reducing member includes multiple protrusions and a coupling portion. When viewed in plan view, an axis line connecting the centers of the figures of the adjacent protrusions does not coincide with a center line passing through the widthwise center of the coupling portion. The coupling portion has a gate cut mark.

Abstract: Approaches to patching a leaky hermetically-sealed device include the use of a laminate rework patch that includes an adhesive tape layer, an aluminum sheet layer, and an outer cover layer, and whereby a viscous adhesive is injected or otherwise applied between the patch and the device leak location, over a layer of primer material, to fill the leak and stop the leakage of gas from inside the device. The thickness of the viscous adhesive, and thus the curing time and temperature of the viscous adhesive, can be managed by way of the thickness of the adhesive tape layer.

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.

Abstract: An image forming apparatus includes: a first conveyance roller pair configured to convey a sheet by rotating while tightly sandwiching the sheet; a rotation blade pair disposed on a downstream side of the first conveyance roller pair in a conveyance path of the sheet and configured to cut the sheet in a direction parallel to the conveyance direction by rotating while sandwiching the sheet; and a second conveyance roller pair configured to convey a cut waste sheet cut by the rotation blade pair in the sheet conveyance direction by rotating while tightly sandwiching the cut waste sheet. A rotational speed of the second conveyance roller pair is controlled at a rotational speed higher than a rotational speed of the first conveyance roller pair.

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.

Abstract: Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller.

Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

Abstract: An image forming apparatus includes: a first conveyance roller pair configured to convey a sheet by rotating while tightly sandwiching the sheet; a rotation blade pair disposed on a downstream side of the first conveyance roller pair in a conveyance path of the sheet and configured to cut the sheet in a direction parallel to the conveyance direction by rotating while sandwiching the sheet; and a second conveyance roller pair configured to convey a cut waste sheet cut by the rotation blade pair in the sheet conveyance direction by rotating while tightly sandwiching the cut waste sheet. A rotational speed of the second conveyance roller pair is controlled at a rotational speed higher than a rotational speed of the first conveyance roller pair.