Patents by Inventor Hitoshi Ujimasa

Hitoshi Ujimasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Susceptor and surface processing method
    Publication number: 20050034675
    Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.
    Type: Application
    Filed: September 21, 2004
    Publication date: February 17, 2005
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tetsuya Nakabayashi, Hitoshi Ujimasa, Kazuyuki Zaitsu, Masafumi Kokura
  • Susceptor and surface processing method
    Patent number: 6808645
    Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: October 26, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tetsuya Nakabayashi, Hitoshi Ujimasa, Kazuyuki Zaitsu, Masafumi Kokura
  • Susceptor and surface processing method
    Publication number: 20020033381
    Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.
    Type: Application
    Filed: March 21, 2001
    Publication date: March 21, 2002
    Inventors: Tetsuya Nakabayashi, Hitoshi Ujimasa, Kazuyuki Zaitsu, Masafumi Kokura
  • Dry etching method of a silicon thin film
    Patent number: 6133157
    Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.
    Type: Grant
    Filed: July 21, 1998
    Date of Patent: October 17, 2000
    Assignee: Sharp Kabushike Kaisha
    Inventors: Takehisa Sakurai, Hitoshi Ujimasa, Katsuhiro Kawai, Atsushi Ban, Masaru Kajitani, Mikio Katayama
  • Selective dry etching method of undoped and doped silicon thin films
    Patent number: 5783494
    Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.
    Type: Grant
    Filed: September 7, 1995
    Date of Patent: July 21, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takehisa Sakurai, Hitoshi Ujimasa, Katsuhiro Kawai, Atsushi Ban, Masaru Kajitani, Mikio Katayama
  • Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
    Patent number: 5162901
    Abstract: An active-matrix display device having low-resistance added capacitance electrode wires in which single or plural secondary wires connected electrically to the added capacitance electrode wires reduce the apparent electrical resistance of the added capacitance electrode wires, which makes the time constant of the added capacitance electrode wires smaller, so that the charging characteristics of the added capacitance are improved and contrast and other display characteristics of the liquid crystal display device are improved.
    Type: Grant
    Filed: May 23, 1990
    Date of Patent: November 10, 1992
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yasunori Shimada, Hirohisa Tanaka, Hisashi Saito, Hitoshi Ujimasa