Abstract: There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOx formed on the surface and a second base material which has an oxide layer MOy with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOy side faces the SiOx side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O?M bonds, the second base material is bonded to the first base material.

Abstract: A field effect transistor comprising: a non-doped diamond layer which has a hydrogen-terminated surface; first and second p+diamond layers which are formed on the non-doped diamond layer and sandwich a hydrogen-terminated region; a source electrode which is formed on the first p+diamond layer and is made of metal; a drain electrode which is formed on the second p+diamond layer and is made of metal; an insulating layer which is formed on the hydrogen-terminated region of the non-doped diamond layer; and a gate electrode which is formed on the insulating layer, a mutual conductance being equal to or higher than 0.5 mS/mm at room temperatures, after an X-ray is applied for an amount of 5 Mgy.

Abstract: This diamond composite includes a first base substrate which has an oxide layer of element M and contains the element M in the composition and a second base substrate which is bonded to the oxide layer and is composed of diamond, in which the M is one or more selected from a metal element with which an oxide can be formed, Si, Ge, As, Se, Sb, Te, and Bi, and the second base substrate is bonded to the oxide layer of the first base substrate by M-O—C bonding of at least some C atoms on the surface of the diamond constituting the second base substrate.

Abstract: A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm?1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 ?m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O-C bonding of at least some C atoms of the (111) surface of the diamond crystal base.

Abstract: There is provided a novel stack that includes a single-crystal diamond substrate having a coalescence boundary, yet effectively uses the coalescence boundary. A stack comprising at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm?1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 ?m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Abstract: In a first expansion valve, a pair of fitting side surfaces, which are formed in a screw member, is opposed to a pair of groove side surfaces, respectively, which are formed in a rotatable member. The fitting side surfaces are rotated about an axis by the groove side surfaces. An overlapping width, throughout which the groove side surface and the fitting side surface are overlapped with each other, is larger than a female-thread inner diameter of a threaded hole, into which the screw member is threadably engaged.

Abstract: To provide a multi-way selector valve properly used for a vehicle, with a smooth flow path switching operation even in case of a large pressure difference between the inside and outside of a valve body, a reduced refrigerant passing noise at a time of switching a flow path, and an easy flow path switching operation, the multi-way selector valve includes a valve body 50 rotated by a flow path switching actuator 15, and a valve main body 60 rotatably holding the valve body 50, the flow path switching actuator is a stepping motor 15 including a rotor 16 placed on the inner peripheral side of a can 38 and a stator 17 placed on an outer periphery of the can 38, and a planetary gear type speed reduction mechanism 40 is inserted between the rotor 16 of the stepping motor 15 and the valve body 50.

Abstract: To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode. A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.

Abstract: The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: A motor-operated valve includes a driving unit including a rotor and a stator, a feed screw mechanism, and a valve main body unit. In order to remove backlash intrinsic in the feed screw mechanism, a coil spring that urges a valve body in a direction away from a valve seat is arranged in a valve chamber. A spring bearing that forms a housing, in which the coil spring is housed, in the valve chamber is provided. Therefore, the large valve chamber is secured in the valve main body unit and passing sound is reduced when a fluid passes the motor-operated valve. Contact surfaces of the valve body and the coil spring can be aligning curved surfaces that absorb a bend of the coil spring.

Abstract: To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode. A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.

Abstract: To provide a multi-way selector valve properly used for a vehicle, with a smooth flow path switching operation even in case of a large pressure difference between the inside and outside of a valve body, a reduced refrigerant passing noise at a time of switching a flow path, and an easy flow path switching operation, the multi-way selector valve includes a valve body 50 rotated by a flow path switching actuator 15, and a valve main body 60 rotatably holding the valve body 50, the flow path switching actuator is a stepping motor 15 including a rotor 16 placed on the inner peripheral side of a can 38 and a stator 17 placed on an outer periphery of the can 38, and a planetary gear type speed reduction mechanism 40 is inserted between the rotor 16 of the stepping motor 15 and the valve body 50.

Abstract: A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm2 in an environment of an atmosphere having an oxygen concentration of 20 to 100% and an ozone concentration of 10 to 500,000 ppm to adsorb oxygen on the surface of diamond.

Abstract: [Object] The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. [Means for Solving Problems] A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.

Abstract: The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P? drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P? drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p? drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.

Abstract: A motor-operated valve has a rotor unit in a can, and is rotationally driven by a stator unit. The rotation of the rotor unit is transmitted to a screw feed member. A stem member fixed to a valve body is engaged threadedly with the screw feed member by a first screw portion. At the same time, the screw feed member is engaged threadedly with an external thread portion fixed to a valve stem by the second screw portion. The first screw portion and the second screw portion constitute a differential screw mechanism, and feeds the valve stem according to a difference in pitch.

Abstract: A motor-operated valve includes a driving unit including a rotor and a stator, a feed screw mechanism, and a valve main body unit. In order to remove backlash intrinsic in the feed screw mechanism, a coil spring that urges a valve body in a direction away from a valve seat is arranged in a valve chamber. A spring bearing that forms a housing, in which the coil spring is housed, in the valve chamber is provided. Therefore, the large valve chamber is secured in the valve main body unit and passing sound is reduced when a fluid passes the motor-operated valve. Contact surfaces of the valve body and the coil spring can be aligning curved surfaces that absorb a bend of the coil spring.

Abstract: A small-sized motor operated valve is disclosed that has high output and high resolution by housing a reduction gear together with a rotor in a single can. A valve shaft 32 having a valve member 30 is inserted to a motor operated valve body 10. A rotor 170 is disposed inside a can 100 attached to the body 10, and inside the rotor 170 is housed a reduction gear 200. The output of the rotor is input to a sun gear 220 and transmitted to planetary gears 230. The planetary gears 230 are engaged both with the fixed gear 250 and the output gear 260, and the output gear 260 is driven at reduced speed by a large reduction ratio. The output of the output gear 260 is transmitted via a driver 300 to a screw shaft 320, where it is converted into a linear movement and transmitted to the valve shaft 32.