Patents by Inventor Hitoshi Yagi
Hitoshi Yagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10879415Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.Type: GrantFiled: February 1, 2019Date of Patent: December 29, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Honam Kwon, Toshiya Yonehara, Hitoshi Yagi, Ikuo Fujiwara, Kazuhiro Suzuki
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Publication number: 20190189674Abstract: According to an embodiment, a photodetector includes a photo detection layer, light conversion members, and a first member. The photo detection layer includes, on a light incident surface, plural pixel regions and a surrounding region. The pixel region holds a photo detection element to detect the light. The surrounding region is a region other than the pixel regions on the light incident surface. The light conversion members are arranged to oppose the pixel regions in the photo detection layer and convert radiation to the light. Each light conversion member includes a bottom surface opposing the pixel region in the photo detection layer, a top surface opposing the bottom surface, and a lateral surface connecting the bottom and top surfaces. The first member is disposed on a portion of the surrounding region on the light incident surface and covers a portion of the lateral surface of the light conversion member.Type: ApplicationFiled: February 6, 2019Publication date: June 20, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yasuharu HOSONO, Kazuhiro SUZUKI, Hitoshi YAGI, Kazunori MIYAZAKI, Go KAWATA, Keita SASAKI, Rei HASEGAWA
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Publication number: 20190165198Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.Type: ApplicationFiled: February 1, 2019Publication date: May 30, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Toshiya YONEHARA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI
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Publication number: 20180372872Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.Type: ApplicationFiled: March 5, 2018Publication date: December 27, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Toshiya Yonehara, Hitoshi Yagi, lkuo Fujiwara, Kazuhiro Suzuki
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Patent number: 10096630Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.Type: GrantFiled: August 31, 2017Date of Patent: October 9, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hitoshi Yagi, Rei Hasegawa, Masaki Atsuta
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Publication number: 20180261634Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.Type: ApplicationFiled: August 31, 2017Publication date: September 13, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hitoshi Yagi, Rei Hasegawa, Masaki Atsuta
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Publication number: 20160380020Abstract: According to an embodiment, a photodetector includes a photo detection layer, light conversion members, and a first member. The photo detection layer includes, on a light incident surface, plural pixel regions and a surrounding region. The pixel region holds a photo detection element to detect the light. The surrounding region is a region other than the pixel regions on the light incident surface. The light conversion members are arranged to oppose the pixel regions in the photo detection layer and convert radiation to the light. Each light conversion member includes a bottom surface opposing the pixel region in the photo detection layer, a top surface opposing the bottom surface, and a lateral surface connecting the bottom and top surfaces. The first member is disposed on a portion of the surrounding region on the light incident surface and covers a portion of the lateral surface of the light conversion member.Type: ApplicationFiled: September 6, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Yasuharu HOSONO, Kazuhiro SUZUKI, Hitoshi YAGI, Kazunori MIYAZAKI, GO KAWATA, Keita SASAKI, Rei HASEGAWA
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Patent number: 9496310Abstract: A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.Type: GrantFiled: October 14, 2015Date of Patent: November 15, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Yagi, Rei Hasegawa
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Publication number: 20160276399Abstract: According to an embodiment, a photodetector includes a photodetecting element and first electrodes. In the photodetecting element, a plurality of pixel regions including a plurality of photodetection portions that detects light are arrayed on a first plane on which the light is incident. The first electrodes pass through a first layer including the photodetection portions in a second direction intersecting with the first plane. The first electrodes are provided respectively corresponding to the pixel regions arranged in an edge area of the first plane of the photodetecting element. The first electrodes are each arranged such that at least a part of a region thereof is arranged outside of the corresponding pixel region.Type: ApplicationFiled: November 24, 2015Publication date: September 22, 2016Inventors: Masaki ATSUTA, Keita SASAKI, Hitoshi YAGI, Kazuhiro ITSUMI, Rei HASEGAWA
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Publication number: 20160254310Abstract: A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.Type: ApplicationFiled: October 14, 2015Publication date: September 1, 2016Inventors: Hitoshi YAGI, Rei HASEGAWA
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Patent number: 9383459Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.Type: GrantFiled: March 6, 2015Date of Patent: July 5, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Masaki Atsuta, Keita Sasaki, Hitoshi Yagi, Rei Hasegawa
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Patent number: 9298046Abstract: A conductive film (12) that covers the upper surface of a CF glass substrate (11) or the upper surface of a polarization plate (13) overlaid on the CF glass substrate is provided. The conductive film and a ground electrode (16) on a TFT glass substrate (10) are electrically connected with a conductive tape (20) having adherence. Then, a conductive paste (22), (23) is adhered to a part so as to be placed on both the conductive tape and the conductive film, and is adhered to a part so as to be placed on both the conductive tape and the ground electrode. The conductive tape is provided with a length allowance such that the entire length is longer than the shortest distance between a connection part between the conductive tape and the conductive film and a connection part between the conductive tape and the ground electrode.Type: GrantFiled: October 15, 2012Date of Patent: March 29, 2016Assignee: Sharp Kabushiki KaishaInventors: Yukihiro Sumida, Hiroshi Kawaguchi, Hitoshi Yagi
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Publication number: 20150268361Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.Type: ApplicationFiled: March 6, 2015Publication date: September 24, 2015Inventors: Masaki ATSUTA, Keita SASAKI, Hitoshi YAGI, Rei HASEGAWA
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Publication number: 20150084149Abstract: A radiation detector according to an embodiment includes: a semiconductor substrate; a light detecting unit provided on a side of a first surface of the semiconductor substrate; a first insulating film provided covering the light detecting unit; a second insulating film covering the first insulating film; a scintillator provided on the second insulating film; an interconnection provided between the first and second insulating films, and connected to the light detecting unit; a first electrode connected to the interconnection through a bottom portion of the first opening; a second electrode provided on a region in the second surface of the semiconductor substrate, the region opposing at least a part of the light detecting unit; a second opening provided in a region surrounding the first electrode and not surrounding the second electrode; and an insulating resin layer covering the first and second electrodes and the first and second openings.Type: ApplicationFiled: September 5, 2014Publication date: March 26, 2015Inventors: Hitoshi YAGI, Rei HASEGAWA, Masaki ATSUTA, Yasuharu HOSONO, Keita SASAKI, Go KAWATA
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Publication number: 20140267991Abstract: A conductive film (12) that covers the upper surface of a CF glass substrate (11) or the upper surface of a polarization plate (13) overlaid on the CF glass substrate is provided. The conductive film and a ground electrode (16) on a TFT glass substrate (10) are electrically connected with a conductive tape (20) having adherence. Then, a conductive paste (22), (23) is adhered to a part so as to be placed on both the conductive tape and the conductive film, and is adhered to a part so as to be placed on both the conductive tape and the ground electrode. The conductive tape is provided with a length allowance such that the entire length is longer than the shortest distance between a connection part between the conductive tape and the conductive film and a connection part between the conductive tape and the ground electrode.Type: ApplicationFiled: October 15, 2012Publication date: September 18, 2014Applicant: Sharp Kabushiki KaishaInventors: Yukihiro Sumida, Hiroshi Kawaguchi, Hitoshi Yagi
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Patent number: 8749010Abstract: According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.Type: GrantFiled: March 21, 2012Date of Patent: June 10, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Ikuo Fujiwara, Hitoshi Yagi, Keita Sasaki
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Patent number: 8629396Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.Type: GrantFiled: September 18, 2011Date of Patent: January 14, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masako Ogata, Ikuo Fujiwara, Hiroto Honda, Kazuhiro Suzuki, Honam Kwon, Risako Ueno, Hitoshi Yagi, Masaki Atsuta, Koichi Ishii, Keita Sasaki, Hideyuki Funaki
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Patent number: 8415622Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.Type: GrantFiled: March 8, 2012Date of Patent: April 9, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiro Suzuki, Hiroto Honda, Ikuo Fujiwara, Hideyuki Funaki, Hitoshi Yagi, Keita Sasaki, Honam Kwon, Koichi Ishii, Masako Ogata, Risako Ueno
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Patent number: 8409420Abstract: The oxalic acid aqueous solution filled in an electrolytic tank is electrolyzed with an electrolyzer to produce carbonic acid gas, while ultrasonic wave from an ultrasonic generator is applied to the produced carbonic acid gas bubbles, to form micro bubbles, which is dissolved in said oxalic acid aqueous solution, so as to easily produce carbonic acid gas solution with micro carbonic acid gas bubbles dissolved at a low cost; said carbonic acid gas solution can substitute carbonated spring.Type: GrantFiled: June 8, 2006Date of Patent: April 2, 2013Assignee: Omsi Co., Ltd.Inventors: Yoh Sano, Masahiko Asano, Hitoshi Yagi
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Patent number: 8338902Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.Type: GrantFiled: March 17, 2011Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Honam Kwon, Hideyuki Funaki, Hiroto Honda, Hitoshi Yagi, Ikuo Fujiwara, Masaki Atsuta, Kazuhiro Suzuki, Keita Sasaki, Koichi Ishii