Abstract: A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.

Abstract: An object of the invention is to provide a resistor element that makes it possible to adjust the resistance value of a precursor easily in producing a resistance element having a target resistance value from the precursor, as well as to the precursor and a related resistance value adjusting method. A precursor 70 has a meandering resistance pattern formed on a front surface 11 of a substrate 10 as well as at least three trimming lines. The precursor 70 is configured so as to be defined by a geometric sequence that satisfies Inequality 0.5?k<?k+1<?k, where ?k is the general term of the sequence that is obtained by arranging, in descending order, resistance value increases of the precursor at the time of cutting of the respective trimming lines and normalizing the thus-arranged resistance value increases by an initial resistance value of the precursor in a state that none of the trimming lines are cut.

Abstract: A soot sensor includes a center electrode extending in an axial direction and a cylindrical insulator from which a leading end of the center electrode protrudes. The insulator is provided around a periphery of the center electrode and includes a heating element. The soot sensor also includes a sealing member sealing a gap between the insulator and the center electrode.

Abstract: A soot sensor includes an insulator having a through-hole and a center electrode provided in the through-hole of the insulator so that a leading end of the center electrode protrudes from a leading end of the insulator and faces a discharge gap. A heating member is embedded in the insulator, and the distance between the heating member and the leading end of the center electrode is at least 10 mm.

Abstract: A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.

Abstract: An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the result deposition layer and the p-type SiC semiconductor, and then further deposition of the metal silicide is performed by means of laser ablation.

Abstract: In an ammonia sensor (1), lead portions (7) and (9) are provided on an insulating substrate (5); a pair of comb-shaped electrodes (11) and (13) are connected to the lead portions (7) and (9), respectively; a sensitive layer (15) is provided on the comb-shaped electrodes (11) and (13); and a protective layer (17) is provided on the sensitive layer (15). Particularly, the sensitive layer (15) is formed of a gas-sensitive raw material predominantly containing ZrO2 and containing at least W in an amount of 2 to 40 wt. % as reduced to WO3.

Abstract: An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.

Abstract: A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H2, NH3, H2S, a hydrocarbon and the like, contained in a sample gas.

Abstract: An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.

Abstract: Disclosed is a dielectric material comprising: 100 parts by weight of a main component having a composition represented by formula: xBaO—yRE2O3—zTiO2, wherein RE represents at least one rare earth element and x+y+z=100 mol %; 5 parts by weight or less of at least one alkali metal oxide; and 5 parts by weight or less of Bi2O3.

Abstract: A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H2, NH3, H2S, a hydrocarbon and the like, contained in a sample gas.

Abstract: Disclosed is a dielectric material comprising: 100 parts by weight of a main component having a composition represented by formula: xBaO—yRE2O3—zTiO2, wherein RE represents at least one rare earth element and x+y+z=100 mol %; 5 parts by weight or less of at least one alkali metal oxide; and 5 parts by weight or less of Bi2O3.

Abstract: Disclosed is a dielectric material comprising: a main ingredient having a composition represented by xBaO-yRE2O3-zTiO2, wherein RE represents at least one rare earth element, and x+y+z=100 mol %; at least one alkali metal oxide; and an ingredient derived from an oxygen supplying agent which releases oxygen on heating.

Abstract: Disclosed is a dielectric ceramic material represented by composition formula: (uLi2O—vNa2O)—wSm2O3—xCaO—yTiO2, having a solid solution structure made up of perovskite crystals represented by Ca1−xSm2x/3TiO3, perovskite crystals represented by Li1/2Sm1/2TiO3, and perovskite crystals represented by Na1/2Sm1/2TiO3. Substitution of part of Ti in the composition with at least one of Ga and Al provides a dielectric ceramic material with a particularly increased value of unloaded quality coefficient. The absolute value of the temperature coefficient of resonance frequency is controlled to a small value by adjusting the proportions of Li and Na.

Abstract: A dielectric material based on BaO-RE.sub.2 O.sub.3 -TiO.sub.2 is disclosed, which has a relatively high relative permittivity .epsilon..sub.r, a small absolute value of the temperature coefficient of resonance frequency .tau..sub.f and a high coefficient of unloaded quality Q.sub.u. Processes for producing the dielectric material are also disclosed. The dielectric material comprises 100 parts by weight of main ingredients having a composition represented by xBaO-yRE.sub.2 O.sub.3 -zTiO.sub.2 (wherein RE represents a rare earth element and x+y+z=100) and up to 5 parts by weight of at least one alkali metal oxide. This alkali metal oxide serves to improve .epsilon..sub.r and Q.sub.u without a considerable sacrifice of .tau..sub.f. The RE preferably consists of samarium or a combination of samarium with neodymium and/or lanthanum.

Abstract: A dielectric material is disclosed which has a small absolute value of the temperature coefficient of resonance frequency and a high coefficient of unloaded quality. Also disclosed are a process for producing the dielectric material and multilayer and other circuit boards containing the dielectric material. The dielectric material is a highly densified material having a water absorption lower than 0.1%, which is obtained by mixing 95.5 to 99.5 percent by weight mixture of a glass frit and a strontium compound with 0.5 to 4.5 percent by weight titanium dioxide, compacting the resultant mixture, and sintering the compact at a relatively low temperature around 930.degree. C. This dielectric material is a glass ceramic containing strontium anorthite (SrAl.sub.2 Si.sub.2 O.sub.8) as the main crystalline phase, and may contain the TiO.sub.2, which remains unchanged after sintering. The absolute value of the temperature coefficient of resonance frequency of the dielectric material is 20 ppm/.degree. C.

Abstract: Dielectric materials are disclosed that are based on BaO--ZnO--Ta.sub.2 O.sub.5 represented by the formula Ba(Zn.sub.1/3 Ta.sub.2/3)O.sub.3. Ba has been partly replaced by K and either Zn or Ta has been replaced by at least one element selected from Mg, Zr, Ga, Ni, Nb, Sn. The dielectric materials have a relatively high permittivity, a small absolute value of the temperature coefficient of resonance frequency, and a high unloaded quality factor. A method for producing the dielectric materials is also disclosed which includes mixing given amounts of starting materials, such as, for example, BaCO.sub.3, ZnO, Ta.sub.2 O.sub.5, K.sub.2 CO.sub.3, MgCO.sub.3, SnO.sub.2 or ZrO.sub.2, compacting the mixture to produce a compact, sintering the compact in an oxidizing atmosphere such as, for example, air, at 1,400 and 1,600.degree. C., more preferably at 1,550 to 1,600.degree. C. for 2 hours, and then heating the sintered compact at a temperature lower than the sintering temperature by from 50 to 250.degree. C., e.g.

Abstract: A nitrogen oxide absorbing material, comprising a hollandite-type complex oxide having main metal elements comprising minimally of aluminum and tin, or zinc and tin, and a method of using that nitrogen oxide absorbing material comprising the steps of contacting the nitrogen oxide absorbing material with a gas containing nitrogen oxides. The method of reducing the adsorbed nitrogen oxides on the nitrogen oxide absorbing material includes the steps of releasing the nitrogen oxides from the nitrogen oxide absorbing material, and of reducing the released nitrogen oxides with a three way catalyst or other nitrogen oxide reducing catalysts.

Abstract: A catalytic material for removing nitrogen oxides comprises a complex oxide as main phase. The complex oxide has a spinel structure and contains metallic elements of Al, Ga, and Zn. The mole fraction x (%) of Zn on oxide basis is greater than 0 and less than 50. Nitrogen-oxides-containing gas and a reductant such as methane or propylene are brought into contact with the catalytic material so as to remove, through reduction, nitrogen oxides from the nitrogen-oxides-containing gas. The catalytic material can be used to remove nitrogen oxides contained in exhaust gas from an automobile or the like. The catalytic material can remove nitrogen oxides even in exhaust gas of a high oxygen concentration and requires no toxic reductant such as ammonia.