Abstract: A semiconductor device is capable of adjusting an input resistance without changing an input terminal capacitance. The capacitance formed by a capacitive wiring and a comb-shaped wiring can be adjusted by changing the length of the capacitive wiring. The resistance between the capacitive wiring and the ground potential can be adjusted by changing the positions of contacts which interconnect the capacitive wiring and a resistive wiring. Since the resistance can be adjusted simply by changing the connections of the contacts, only the input resistance can be adjusted without changing the input terminal capacitance.

Abstract: A semiconductor device is capable of adjusting an input resistance without changing an input terminal capacitance. The capacitance formed by a capacitive wiring and a comb-shaped wiring can be adjusted by changing the length of the capacitive wiring. The resistance between the capacitive wiring and the ground potential can be adjusted by changing the positions of contacts which interconnect the capacitive wiring and a resistive wiring. Since the resistance can be adjusted simply by changing the connections of the contacts, only the input resistance can be adjusted without changing the input terminal capacitance.

Abstract: A variable delay circuit has plural delay stages connected in series for providing delay time during signal propagation therethrough, and a high resistive delay signal line on a lower level of a multi-layered semiconductor structure and a low resistive breakable signal line on an upper level of the multi-layered semiconductor structure are connected in parallel between two nodes of each delay stage so as to change the total resistance of the delay stage; when a manufacturer decreases the delay time, the low resistive breakable signal line is broken, and the signal is propagated through the high resistive signal line instead of the low resistive breakable signal line.