Patents by Inventor Hitoshio Sannomiya

Hitoshio Sannomiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder
    Patent number: 5487786
    Abstract: There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: January 30, 1996
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Atsushi Chida, Hitoshio Sannomiya, Katsuhiko Nomoto, Hiroshi Okamoto, Yoshihiro Yamamoto