Abstract: A capacitance-type dynamic-quantity sensor has a silicon substrate having etched recessed upper and lower surface portions forming a weight supported by beam portions and mounted to undergo displacement due to an applied external dynamic quantity such as acceleration or angular velocity. An upper glass substrate is bonded to a part of the upper surface of the silicon substrate and is laminated with a first fixed electrode disposed opposite to and spaced apart from the weight with a first space therebetween formed by the etched recessed upper surface portion of the silicon substrate. A lower glass substrate is bonded to a part of the lower surface of the silicon substrate and is laminated with a second fixed electrode disposed opposite to and spaced apart from the weight with a second space therebetween formed by the etched recessed lower surface portion of the silicon substrate.

Abstract: To provide a capacitance-type dynamic-quantity sensor capable of reducing a variation in detection sensitivity, free of peeling of an electrode or disconnection thereof, and excellent in reliability, and a manufacturing method therefor. In the capacitance-type dynamic-quantity sensor, a semiconductor substrate where an oscillator is to be formed is processed with a high precision from its front and rear sides to define minute spaces between the oscillator, and flat upper glass substrate and lower glass substrate on each of which an electrode is to be laminated, thereby reducing a variation in detection sensitivity and suppressing peeling of the electrode and disconnection thereof.