Patents by Inventor Hizuru Uda

Hizuru Uda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor integrated circuit bipolar transistor device
    Patent number: 5227317
    Abstract: A method of manufacturing a bipolar transistor having a base lead-out electrode provided so as to surround an emitter region to be formed on a main surface of a semiconductor substrate and also having an emitter lead-out electrode provided along a stepped shape of the base lead-out electrode and connected to said emitter region is characterized by forming a first silicon film selectively only in an area surrounded by the base lead-out electrode. Impurity is introduced into the first silicon film and then diffused into the main surface of the semiconductor substrate to form the emitter region. Finally, a second silicon film is formed on the first silicon film to serve as the emitter lead-out electrode.
    Type: Grant
    Filed: September 20, 1991
    Date of Patent: July 13, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Nobuo Owada, Hizuru Uda
  • Method of manufacturing semiconductor integrated circuit bipolar transistor device
    Patent number: 5089430
    Abstract: A method of manufacturing a bipolar transistor having a base lead-out electrode provided so as to surround an emitter region to be formed on a main surface of a semiconductor substrate and also having an emitter lead-out electrode provided along a stepped shape of the base lead-out electrode and connected to said emitter region is characterized by forming a first silicon film selectively only in an area surrounded by the base lead-out electrode. Impurity is introduced into the first silicon film and then diffused into the main surface of the semiconductor substrate to form the emitter region. Finally, a second silicon film is formed on the first silicon film to serve as the emitter lead-out electrode.
    Type: Grant
    Filed: April 16, 1990
    Date of Patent: February 18, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Nobuo Owada, Hizuru Uda