Abstract: Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased.

Abstract: Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

Abstract: A field effect transistor having a T- or ?-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.

Abstract: The invention relates to a side-emitting LED package and a manufacturing method of the same. The invention provides a side-emitting LED package for emitting light from a light source sideward including a substrate with an electrode formed thereon. The package also includes a light source disposed on the substrate, a molded part that covers and protects the substrate with the light source thereon, and a reflective layer that covers an outer surface of the molded part. The molded part with the reflective layer forms a light transmitting surface in one side thereof. The invention allows easy manufacture of a reflecting surface in a desired shape, miniaturization regardless of the LED chip size, mass-production in an LED array, significantly improving productivity.

Abstract: The invention provides an LED package and a backlight device incorporating the LED lens. The LED package has a bottom surface and a light exiting surface cylindrically extended around a central axis of the package from the bottom surface. Also, a reflecting surface is positioned on an opposite side of the bottom surface and symmetrical around the central axis such that light incident from the bottom surface is reflected toward the light exiting surface. Further, a scattering area is formed on the reflecting surface. According to the invention, by applying scattering materials on the reflecting surface of the LED package, a reflecting paper does not need to be attached, thereby simplifying a process and reducing the manufacture time and cost.

Abstract: A direct-illumination backlight apparatus uses LEDs as a light source. This backlight apparatus comprises: a flat reflective plate; an LED light source arranged on the reflective plate; a transparent plate arranged above the LED light source; a scattering pattern arranged on an underside of the transparent plate in a position corresponding to the LED light source; and a light guide made of transparent material, and arranged around the scattering pattern to introduce light incident from below into the transparent plate so that the light is internally reflected by the transparent plate. The light guide serves to introduce a partial light from an LED light source at such an angle that the partial light is trapped inside the transparent plate, and the scattering pattern serves to scatter the trapped light beam at a position directly above the LED light source so that the scattered light beam escapes out of the transparent plate toward an LCD panel.

Abstract: The invention relates to an LED package frame and an LED package incorporating the same. The LED package frame comprises an LED chip; and a heat conductive member made of a lump of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member to separate the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability. Also, it is possible to provide an LED package frame and a high power LED package by fixing the lead fixed to the heat conductive member without a jig.

Abstract: A side-emission type LED package is provided. The LED package includes an LED chip, a lower structure, and an upper structure. The lower structure has a lower mirror and a transparent sealing member. The lower structure supports the LED chip. The lower mirror is extended upward and outward@ from the LED chip so as to reflect light from the LED chip upward. The transparent sealing member is formed around the LED chip inside the lower mirror. The upper structure is combined to an upper portion of the lower structure so as to reflect the light reflected upward by the lower structure to a radial lateral direction. As described above, the lower structure and the upper structure are separately provided and combined with each other, whereby molding efficiency of the sealing member is improved and the side-emission type LED package can be manufactured in an easy manner.

Abstract: Provided is an LED array circuit that has reduced power consumption and can protect an LED from a reverse voltage. The LED array circuit includes an LED pair, and an AC power source for supplying an AC voltage to the LED pair. The LED pair includes a first LED and a second LED that are connected in parallel to each other with biasing polarity connected in reverse.

Abstract: This invention relates to an LED backlight apparatus. The LED backlight apparatus comprises: a housing having an upper opening; a reflective sheet provided on a bottom inside the housing; a plurality of LED light sources arranged above the reflective sheet at a predetermined distance to emit light toward the reflective sheet; and a light source support connected to a side wall of the housing to support the LED light sources. The light sources are arranged opposite to the reflective sheet so that light beams emitted from the LED light sources reflect from the reflective sheet before entering a diffuser plate behind the LED light sources from the reflective sheet, thereby potentially reducing the thickness of the backlight apparatus while ensuring a distance for the light beams to sufficiently mix together before entering the differ plate.

Abstract: Provided are a transistor of a semiconductor device and a method of fabricating the same.

Abstract: Provided is a method of manufacturing a field effect transistor (FET).

Abstract: Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased.

Abstract: The present invention relates to a backlight apparatus used in an LCD, in which upper and lower reflective plates are installed under upper and lower transparent plates, respectively. The lower transparent plates and the lower reflective plates introduce light generated by lower light sources in upward directions and the upper transparent plate and the upper reflective plates introduce light generated by an upper light source into those areas, which are not lighted by the lower light sources. This can prevent the formation of dark areas above the lower light sources as a problem of a conventional large-sized backlight apparatus, thereby enhancing the overall uniformity of light. In this way, the backlight apparatus of the invention can be designed thin even when applied to a large-sized LCD.

Abstract: The invention relates to an LCD backlight apparatus, which includes a light guide plate placed under an LCD panel of the LCD to guide light to the LCD panel. The light guide plate has an even upper surface and a scattering pattern formed in a bottom surface. A plurality of monochromatic light sources are placed in line at a side of the light guide plate to radiate light along the plane direction of the light guide plate between the upper and bottom surfaces of the light guide plate. The light sources are adapted to radiate light beams in a predetermined beam angle so that the light beams reach the scattering pattern only after having propagated a predetermined reference length necessary for forming white light when mixed together. The LCD backlight apparatus can reduce the Bezel width without increasing the thickness of an LCD.

Abstract: The present invention relates to an LED lens, in which a planar bottom has a pair of halves symmetrically connected with each other about a reference line and narrowed in the vicinity of the reference line. A pair of substantially semicircular reflecting surfaces are extended from both edges of the bottom connected with both ends of the reference line. A radiating surface is connected with remaining edges of the bottom and semicircular edges of the reflecting surfaces. The reflecting surfaces reflect light beams are introduced from the LED chip through the bottom toward the radiating surface. The radiating surface radiates the light beams to the outside when the light beams are introduced to the radiating surface through reflection from the reflecting surfaces and directly through the bottom, so that the light beams are radiated to the outside in a predetermined beam angle.

Abstract: Provided is a substrate holder including a susceptor having edge protrusion formed on edge thereof and an electrostatic chuck mounted inside the edge protrusion and on the susceptor. The electrostatic chuck is attached to the susceptor by a gel adhesive sheet containing a plurality of wires and a silicon or corrosion-resistant epoxy based material is filled between the electrostatic chuck and the edge protrusion. The planarity of the electrostatic chuck can be maintained accurately when the electrostatic chuck is attached to the susceptor and clogging of cooling gas supply holes and leakage of cooling gas through a space between the electrostatic chuck and the susceptor can be prevented.