Abstract: A claw crane structure includes a main body a coil being provided therein, a bottom of the main body being provide with a clamping claw coupled pivotally to a standing tube extended inside the coil, allowing the clamping claw to be clamped inward or expanded outward according to the rise and fall of the standing tube inside the coil, characterized in that a PC circuit board relatively above the coil is provide on the main body, both ends of the coil are respectively in electric connection with two coil contacts provided on the PC circuit board; the main body further comprises a winding wire for provision of electric energy, two terminals thereof are similarly in electric connection with two winding wire contacts provided on the PC circuit board, each pair of the coil contact and winding wire contact are in electric connection with each other.

Abstract: An electronic device includes a substrate, a sidewall, a plurality of light emitting elements and an optical element. The sidewall is connected to the substrate. The plurality of light emitting elements are disposed on the substrate. The optical element covers at least two of the plurality of light emitting elements, wherein, in a cross-sectional view of the electronic device, a portion of the optical element is disposed between two adjacent ones of the plurality of light emitting elements, and a height of the sidewall is greater than a thickness of the optical element.

Abstract: A screen control system includes a source controller, a plurality of serial units and a plurality of forward channels. The plurality of serial units are coupled in series, coupled to the source controller, and configured to control a display screen. Each of the plurality of forward channels is coupled between two of the plurality of serial units or between one of the plurality of serial units and the source controller, configured to forward a video data and a command to the plurality of serial units from the source controller. The plurality of forward channels couple the source controller with the plurality of serial units to form a closed loop.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing forming a first metal-insulator-metal (MIM) capacitor over a substrate and forming a second MIM capacitor over the first MIM capacitor. The forming of the first MIM capacitor includes forming a first conductor plate over a substrate, the first conductor plate comprising a first metal element, conformally depositing a first dielectric layer on the first conductor plate, the first dielectric layer comprising the first metal element, forming a first high-K dielectric layer on the first dielectric layer, conformally depositing a second dielectric layer on the first high-K dielectric layer, the second dielectric layer comprising a second metal element, and forming a second conductor plate over the second dielectric layer, the second conductor plate comprises the second metal element.

Abstract: A method and system for photopolymerization 3D printing is provided. The system includes a processing device, a micro light emitting diode (microLED) array including one or more individually addressable microLED emitters, and a printing component. The processing device is configured to determine one or more printing layers of an object. The microLED array is configured to generate light for each of the one or more printing layers. The printing component is configured to print the one or more printing layers. To generate the light for each of the one or more printing layers, the processing device is further configured to dynamically determine one or more microLED regions in the microLED array, determine one or more region printing parameters for each of the one or more microLED regions; and determine one or more control signals for the one or more individually addressable microLED emitters included in each of the one or more microLED regions based on the one or more region printing parameters.

Abstract: Provided is an injectable sustained release pharmaceutical formulation, including 3-acyl-naltrexone or a pharmaceutically acceptable salt thereof, a biocompatible organic solvent, and optionally a biocompatible polymeric material. Also provided is a method for treating opioid use disorder or alcoholism, including administering the injectable sustained release pharmaceutical formulation to a subject in need thereof. The pharmaceutical formulation provides a sustained release profile after one single injection, and the plasma levels of naltrexone in minipigs could provide a sustained release for 2 months.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

Abstract: We found mutations of the R132 residue of isocitrate dehydrogenase 1 (IDH1) in the majority of grade II and III astrocytomas and oligodendrogliomas as well as in gliblastomas that develop from these lower grade lesions. Those tumors without mutations in IDH1 often had mutations at the analogous R172 residue of the closely related IDH2 gene. These findings have important implications for the pathogenesis and diagnosis of malignant gliomas.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

Abstract: Analysis of 13,023 genes in 11 breast and 11 colorectal cancers revealed that individual tumors accumulate an average of ˜90 mutant genes but that only a subset of these contribute to the neoplastic process. Using stringent criteria to delineate this subset, we identified 189 genes (average of 11 per tumor) that were mutated at significant frequency. The vast majority of these genes were not known to be genetically altered in tumors and are predicted to affect a wide range of cellular functions, including transcription, adhesion, and invasion. These data define the genetic landscape of two human cancer types, provide new targets for diagnostic and therapeutic intervention and monitoring.

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

Abstract: A drawn fused filament fabrication method of three-dimensional printing is disclosed in which the filament extruded is variable and not restricted to the diameter of the nozzle used for extrusion. This method composes three steps. The first is to extrude a small amount of material at a starting position. Next, the extruding head pulls the extruded material along while moving away from the starting position. During this time to material cools down and solidifies. As a result, a thin filament is formed. Third, once the extruding head moves to a destination, a small amount of material can be extruded and deposited to anchor this newly formed filament to a surface. The drawn fused filament fabrication method may be used to print three-dimensional parts having significant lower thickness than the diameter of the nozzle used to extrude the printing material.

Abstract: A method of forming a semiconductor device includes forming a CFET structure having a bottom gate region having a first plurality of gate dielectric layers wrapping around a first plurality of channels and a top gate region having a second plurality of gate dielectric layers wrapping around a second plurality of channels. The method includes performing a first dipole loop process to drive first dipole dopants into the first plurality of gate dielectric layers and performing a second dipole loop process to drive second dipole dopants into the second plurality of gate dielectric layers. And after performing the first and second dipole loop processes, the method includes depositing a gate metal over the first and second plurality of gate dielectric layers.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided, including a polishing pad and a polishing head. The polishing pad has a polishing surface. The polishing head is configured to hold a wafer in contact with the polishing surface during the polishing process. The polishing head includes a retaining ring, at least one fluid channel, and a vacuum pump. The retaining ring is arranged along the periphery of the polishing head and configured to retain the wafer. The at least one fluid channel is provided inside the polishing head, wherein the retaining ring includes a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel. The vacuum pump is fluidly coupled to the at least one fluid channel.

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

Abstract: The disclosure provides a touch device and an operation method thereof. A touch panel of the touch device is divided into a plurality of stylus connection areas. During a first discovery period, the stylus connection areas detect a stylus one by one in a first scan order. When the stylus is located in one of the stylus connection areas (a hit area), the first discovery period is ended to enter a normal period, and the hit area establishes a connection to the stylus. When the connection between the stylus and the touch panel is interrupted, the normal period is ended to enter a second discovery period, and the first scan order is adjusted to a second scan order according to the hit area in the normal period. During the second discovery period, the stylus connection areas detect the stylus one by one in the second scan order.