Abstract: Antibodies are provided which comprise at least one Fab portion that binds CD47 and at least one Fab portion that binds the tumor associated antigen (TAA) CD20; wherein the Fab portion that binds CD47 exhibits low affinity for CD47; and, wherein the Fab portion that binds CD20 exhibits high affinity for CD20; and, wherein the antibody selectively binds CD47 and blocks CD47 interaction with SIRP? in tumor cells while exhibiting no substantial binding to CD47 in normal cells.

Abstract: Antibodies are provided which comprise at least one Fab portion that binds CD47 and at least one Fab portion that binds the tumor associated antigen (TAA) CD20; wherein the Fab portion that binds CD47 exhibits low affinity for CD47; and, wherein the Fab portion that binds CD20 exhibits high affinity for CD20; and, wherein the antibody selectively binds CD47 and blocks CD47 interaction with SIRP? in tumor cells while exhibiting no substantial binding to CD47 in normal cells.

Abstract: Provided is a method for the treatment of a lymphoid malignant neoplasm in a subject in need thereof comprising administering to the subject an effective amount of a bispecific antibody which comprises a Fab portion that binds CD47 and a Fab portion that binds CD20. In some embodiments, the lymphoid malignant neoplasm is Non-Hodgkin's Lymphoma (NHL), follicular lymphoma (FL), diffuse large B-cell lymphoma (DLBCL), marginal zone lymphoma (MZL), mantle cell lymphoma (MCL), or primary mediastinal B-cell lymphoma. In certain embodiments, the lymphoid malignant neoplasm is NHL.

Abstract: Antibodies are provided which comprise at least one Fab portion that binds CD47 and at least one Fab portion that binds the tumor associated antigen (TAA) CD20; wherein the Fab portion that binds CD47 exhibits low affinity for CD47; and, wherein the Fab portion that binds CD20 exhibits high affinity for CD20; and, wherein the antibody selectively binds CD47 and blocks CD47 interaction with SIRP? in tumor cells while exhibiting no substantial binding to CD47 in normal cells.

Abstract: Antibodies are provided which comprise at least one Fab portion that binds CD47 and at least one Fab portion that binds the tumor associated antigen (TAA) CD20; wherein the Fab portion that binds CD47 exhibits low affinity for CD47; and, wherein the Fab portion that binds CD20 exhibits high affinity for CD20; and, wherein the antibody selectively binds CD47 and blocks CD47 interaction with SIRP? in tumor cells while exhibiting no substantial binding to CD47 in normal cells.

Abstract: Modified human interferon polypeptides and uses thereof are provided.

Abstract: Modified human interferon polypeptides and uses thereof are provided.

Abstract: A circuit for generating a data strobe signal of a semiconductor memory device comprises a plurality of internal clock delay units, a selecting control unit and a pulse generating unit. The plurality of internal clock delay units delay an internal clock signal in response to a plurality of CAS latency signal. The selecting control unit logically combines a data latch control signal to latch input data with output signals from the plurality of internal clock delay units. The pulse generating unit generates the data strobe signal having a predetermined pulse in response to an output signal from the selecting control unit. In the circuit, a tDQSS margin is regulated depending on change of tCK of an operating frequency in response to a CAS latency signal.

Abstract: Modified growth hormone polypeptide and uses thereof are provided.

Abstract: The present invention relates generally to the production, purification, and isolation of human growth hormone (hGH). More particularly, the invention relates to the production, purification, and isolation of substantially purified hGH from recombinant host cells or culture medium including, for example, yeast, insect, mammalian and bacterial host cells. The process of the present invention is also useful for purification of hGH linked to polymers or other molecules.

Abstract: Novel antigen-binding polypeptides (ABP) and uses thereof are provided.

Abstract: A circuit for generating a data strobe signal of a semiconductor memory device comprises a plurality of internal clock delay units, a selecting control unit and a pulse generating unit. The plurality of internal clock delay units delay an internal clock signal in response to a plurality of CAS latency signal. The selecting control unit logically combines a data latch control signal to latch input data with output signals from the plurality of internal clock delay units. The pulse generating unit generates the data strobe signal having a predetermined pulse in response to an output signal from the selecting control unit. In the circuit, a tDQSS margin is regulated depending on change of tCK of an operating frequency in response to a CAS latency signal.

Abstract: A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming Al2O3 and HfO2 dielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the Al2O3 and HfO2 dielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.

Abstract: A local input/output line precharge circuit of a semiconductor memory device comprises a precharge control unit, an equalization unit and a data output unit. The precharge control unit outputs a precharge control signal to precharge a pair of local input/output lines in response to a continuous write signal activated when a write operation continues. The equalization unit precharges and equalizing the pair of local input/output lines in response to the precharge control signal. The data output unit outputs data signals of a pair of global input/output lines to the pair of local input/output lines in response to output signal from the equalization unit. In the circuit, a local input/output line precharge operation is not performed at a continuous write mode, thereby reducing current consumption.

Abstract: Modified biosynthetic polypeptide molecules, methods for manufacturing, and uses thereof are provided.

Abstract: Modified human interferon polypeptides and uses thereof are provided.

Abstract: The present invention provides methods and pharmaceutical compositions for inhibiting expressions of HIF and HIF regulated genes, inhibiting angiogenesis, inducing cell cycle arrest in tumor cells, and treating cell proliferating diseases or conditions.

Abstract: Modified human growth hormone polypeptides and uses thereof are provided.

Abstract: A method for forming an isolation layer of a semiconductor device, which comprises the steps of: a) sequentially forming a pad oxide layer and a pad nitride layer on a silicon substrate; b) etching the pad nitride layer, the pad oxide layer, and the silicon substrate, thereby forming a trench; c) thermal-oxidizing the resultant substrate to form a sidewall oxide layer on a surface of the trench; d) nitrifying the sidewall oxide layer through the use of NH3 annealing; e) depositing a liner aluminum nitride layer on an entire surface of the silicon substrate inclusive of the nitrated sidewall oxide layer; f) depositing a buried oxide layer on the liner aluminum nitride layer to fill the trench; g) performing a chemical mechanical polishing process with respect to the buried oxide layer; and h) eliminating the pad nitride layer.

Abstract: Provided is directed to a circuit for generating a DQS signal in a semiconductor memory device which includes: a DQS data generation unit for generating a DQS preamble signal and a DQS data, signals earlier than a CAS latency; a DQS output control signal generation unit for generating a control signal to drive the DQS preamble signal out before the CAS latency and to drive the DQS data out after the CAS latency; a DQS driver for driving the DQS preamble signal and a rising data of the DQS data from the DQS data generation unit according to a rising clock of the DQS output control signal generation unit, and driving a falling data from the DQS data generation unit according to a falling clock of the DQS output control signal generation unit.