Abstract: Disclosed herein are compositions and pharmaceutical formulations that comprise a binding moiety conjugated to a modified polynucleic acid molecule and a polymer. Also described herein include methods for treating a cancer which utilize a composition or a pharmaceutical formulation comprising a binding moiety conjugated to a polynucleic acid molecule and a polymer.

Abstract: Disclosed herein are polynucleic acid molecules, pharmaceutical compositions, and methods for treating muscle atrophy or myotonic dystrophy.

Abstract: Disclosed are a method of manufacturing a light-emitting device using mechanical cutting technology and a light-emitting device manufactured through the method, and an embodiment provides a method of implementing a pixelated light-emitting device.

Abstract: Disclosed herein are compositions and pharmaceutical formulations that comprise a binding moiety conjugated to a polynucleic acid molecule and a polymer. Also described herein include methods for treating a cancer which utilize a composition or a pharmaceutical formulation comprising a binding moiety conjugated to a polynucleic acid molecule and a polymer.

Abstract: A method of manufacturing a perovskite light emitting device using a two-dimensional material capable of implementing the entire visible light region as a light emitting material.

Abstract: A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.

Abstract: A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.

Abstract: Semiconductor devices and methods of manufacture are discussed. In an embodiment, a method of manufacturing a semiconductor device includes: forming first nanostructures from a first material over a substrate; forming second nanostructures from a second material different from the first material over the substrate, wherein the first nanostructures and the second nanostructures alternate vertically above the substrate; removing the first nanostructures; after the removing the first nanostructures forming an interposer in between the second nanostructures; after the forming the interposer forming a first source/drain region over the substrate and in direct physical contact with the second nanostructures; and removing the interposer exposing surfaces of each of the second nanostructures.

Abstract: Some embodiments of the present disclosure provide a semiconductor structure including a dielectric layer stack, an isolation structure, a lining layer and a contact. The isolation structure is in contact with a sidewall of the dielectric layer stack, and the sidewall of the dielectric layer stack and a sidewall of the isolation structure define a sharp corner. The lining layer is at the sharp corner, and a sidewall of the lining layer, the sidewall of the dielectric layer stack and the sidewall of the isolation structure define a round corner. The contact is in contact with the sidewall of the dielectric layer stack, the sidewall of the isolation structure and the sidewall of the lining layer.

Abstract: Disclosed is an upside-down sprayer with an auxiliary air conducting device for liquid pumping, including a container, a nozzle, and a dip tube equipped with a switching valve near its upper end, which has a valve casing, a valve ball, and an inverted liquid pumping port. An auxiliary air conducting device is disposed adjacent to the switching valve and includes a connection part, a guide seat, and a projecting tube with an opening, wherein the connection part is positioned on the dip tube, the guide seat has a groove, and the projecting tube communicates with the groove. The opening of the projecting tube is offset in the direction of the inverted liquid pumping port, and the height of the opening is not lower than the height of the inverted liquid pumping port when used inverted.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a first isolation spacer, a second isolation spacer, a capacitor contact, a landing pad, and a dielectric structure. The bit line is disposed on the substrate. The first isolation spacer is disposed on a first side of the bit line. The second isolation spacer is disposed on a second side of the bit line. The capacitor contact is disposed on the substrate and spaced apart from the bit line through the first isolation spacer. The landing pad is disposed on the first isolation spacer and electrically connected to the capacitor contact. The dielectric structure is disposed on the second isolation contact. A top surface of the dielectric structure is non-coplanar with a top surface of the landing pad.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a first isolation spacer, a second isolation spacer, a capacitor contact, a landing pad, and a dielectric structure. The bit line is disposed on the substrate. The first isolation spacer is disposed on a first side of the bit line. The second isolation spacer is disposed on a second side of the bit line. The capacitor contact is disposed on the substrate and spaced apart from the bit line through the first isolation spacer. The landing pad is disposed on the first isolation spacer and electrically connected to the capacitor contact. The dielectric structure is disposed on the second isolation contact. A top surface of the dielectric structure is non-coplanar with a top surface of the landing pad.

Abstract: Disclosed herein are polynucleic acid molecules, pharmaceutical compositions, and methods for treating muscle atrophy or myotonic dystrophy.

Abstract: An electrical property testing device of an evaluation board includes a main circuit board, a voltage detecting unit, a storing unit, a processing unit and an adapter board. The voltage detecting unit is configured to detect a plurality of voltage values of the signal pads. The storing unit stores a plurality of standard voltage values corresponding to the signal pads. The processing unit is electrically connected to the voltage detecting unit and the storing unit. The processing unit receives the voltage values and determines whether the voltage values match the standard voltage values to generate a determining result. The adapter board includes a plurality of conductive pads. The conductive pads are correspondingly connected to the signal pads of the evaluation board. The voltage detecting unit detects the voltage values of the signal pads of the evaluation board via the conductive pads.

Abstract: A disclosed method of selective separation and transfer of 2D material may include preparing a substrate structure including an adhesion target layer in which at least two different material layers are arranged to be in contact with each other laterally, preparing a crystalline material member including a 2D material, wherein the 2D material constitutes a unit layer, and a plurality of the unit layers form a layered structure through bonding, adhering the crystalline material member to a surface of the adhesion target layer so that a bond is formed between the crystalline material member and the adhesion target layer, and separating the crystalline material member and the adhesion target layer so that a 2D material layer pattern separated from the crystalline material member is formed on the surface of the adhesion target layer.

Abstract: Disclosed herein are polynucleic acid molecules, pharmaceutical compositions, and methods for treating muscle atrophy or myotonic dystrophy.

Abstract: An electrical property testing device of an evaluation board includes a main circuit board, a voltage detecting unit, a storing unit, a processing unit and an adapter board. The voltage detecting unit is configured to detect a plurality of voltage values of the signal pads. The storing unit stores a plurality of standard voltage values corresponding to the signal pads. The processing unit is electrically connected to the voltage detecting unit and the storing unit. The processing unit receives the voltage values and determines whether the voltage values match the standard voltage values to generate a determining result. The adapter board includes a plurality of conductive pads. The conductive pads are correspondingly connected to the signal pads of the evaluation board. The voltage detecting unit detects the voltage values of the signal pads of the evaluation board via the conductive pads.

Abstract: Disclosed herein are compositions and pharmaceutical formulations that comprise a binding moiety conjugated to a modified polynucleic acid molecule and a polymer. Also described herein include methods for treating a cancer which utilize a composition or a pharmaceutical formulation comprising a binding moiety conjugated to a polynucleic acid molecule and a polymer.

Abstract: An antibacterial implantable medical device or medical material. The surface of an implantable medical device or medical material has a titanium coating formed thereon. Titanium nitride nanowires are formed that extend from the titanium coating at a selected angle to exert a mechanical force on bacteria bilayer membranes sufficient to at least partially disrupt the bacteria bilayer membranes. In one aspect, the titanium nitride nanowires are formed from grown titanium dioxide nanowires by converting the titanium dioxide nanowires to titanium nitride in a heated nitrogen-containing environment. The titanium nitride nanowires are optionally charged to further enhance antibacterial properties.

Abstract: Disclosed herein are polynucleic acid molecules, pharmaceutical compositions, and methods for treating muscle atrophy or myotonic dystrophy.