Abstract: An exposure apparatus and photo-mask of the exposure apparatus can form a perpendicular line/space circuit pattern through only a single exposure process. The photo-mask includes a first line/space pattern oriented in a first direction, a second line/space pattern oriented in a second direction and lattice patterns, operating as polarizers, occupying the spaces of the line/space patterns. The exposure apparatus also includes a modified illuminating system. The modified illuminate system may be a composite polarization illuminating system having a shielding region, and a plurality of light transmission regions defined within the field of the shielding region. The light transmission regions are implemented as polarizers that polarize the light incident thereon in the first and second directions, respectively.

Abstract: A stencil mask includes a membrane forming thin layer having membrane areas and a border area that limits the membrane areas. The membrane areas have a plurality of pattern areas which include an aperture through which particle beams can permeate and non-pattern areas interposed between the pattern areas. A main strut supports the membrane areas and is formed on the border area of the membrane forming thin layer. An auxiliary strut is formed in the non-pattern areas inside the membrane pattern area such that the auxiliary strut divides the membrane areas into plural divided membrane areas. The auxiliary strut supports the divided membrane areas.

Abstract: A stencil mask includes a membrane forming thin layer having membrane areas and a border area that limits the membrane areas. The membrane areas have a plurality of pattern areas which include an aperture through which particle beams can permeate and non-pattern areas interposed between the pattern areas. A main strut supports the membrane areas and is formed on the border area of the membrane forming thin layer. An auxiliary strut is formed in the non-pattern areas inside the membrane pattern area such that the auxiliary strut divides the membrane areas into plural divided membrane areas. The auxiliary strut supports the divided membrane areas.

Abstract: Photolithographic methods for semiconductor manufacturing are provided wherein photomask structures are designed to provide increased lithographic process windows for printing sub-wavelength features. In one aspect, a photomask includes a mask substrate transparent to exposure light of a given wavelength, and a mask pattern formed on a surface of the substrate. The mask pattern comprises a printable element defined by a first and second critical edge, wherein the printable element includes an inner, non-printing feature formed between the first and second critical edges. The inner, non-printing feature is adapted to enhance image contrast at the first and second critical edges of the printable element for the given wavelength of exposure light during a photolithographic process.

Abstract: Systems and methods are provided for detecting focus variation in a lithographic process using photomasks having test patterns adapted to print test features with critical dimensions that can be measured and analyzed to determine magnitude and direction of defocus from a best focus position of an exposure tool during the lithographic process.

Abstract: A focus monitoring mask includes a transparent substrate, e.g., a quartz layer. A light blocking film, e.g., a chromium-containing film, is disposed on the transparent substrate and has an opening therein. A transparent unit is disposed in a portion of the substrate exposed by the opening. The transparent unit includes a first phase shifter, a second phase shifter and a third phase shifter arranged adjacently in order of amount of phase shift. The second phase shifter is configured to provide an about 180° phase difference with respect to the first phase shifter. The third phase shifter is configured to provide a phase difference other than about 0° and about 180° with respect to the first phase shifter. The transparent unit may further include a fourth phase shifter having a fourth phase difference with respect to the first phase shifter that differs from about 0°, about 180° and the phase difference provided by the third phase shifter.

Abstract: An exposure apparatus and photo-mask of the exposure apparatus can form a perpendicular line/space circuit pattern through only a single exposure process. The photo-mask includes a first line/space pattern oriented in a first direction, a second line/space pattern oriented in a second direction and lattice patterns, operating as polarizers, occupying the spaces of the line/space patterns. The exposure apparatus also includes a modified illuminating system. The modified illuminate system may be a composite polarization illuminating system having a shielding region, and a plurality of light transmission regions defined within the field of the shielding region. The light transmission regions are implemented as polarizers that polarize the light incident thereon in the first and second directions, respectively.

Abstract: An optical system for spatially controlling light polarization, and method for manufacturing the same, includes a light source for generating a light beam of a designated wavelength, a beam shaper for splitting the light beam generated from the light source into a plurality of partial beams, and a polarization controller controlling the polarization states of the partial beams. The polarization controller may be formed on the beam shaper or separate from the beam shaper.

Abstract: A photomask is useful in measuring the aberration of an optical lens. The photomask includes a transparent substrate, a first opaque pattern formed on a first surface of the transparent substrate and defining a plurality of apertures that expose the first surface, and a second opaque pattern formed on the second surface of the transparent substrate. The photomask is placed in an exposure apparatus between a light source of the exposure apparatus and an optical lens whose aberration is to be measured. A photoresist layer on a wafer is exposed through the photomask and the pupil of the optical lens to form a first pattern on the wafer corresponding to the second opaque pattern of the photomask. The aberration of the pupil of the optical lens is evaluated based on the relative location at which the first pattern is formed on the wafer.

Abstract: A method and system for measuring stray light for use in an exposure apparatus uses an image sensor to be disposed at a wafer level in the exposure apparatus. The stray light is measured by preparing a reference pattern and a measuring pattern on a reticle. The reference pattern includes a light shielding region having first open regions for transmitting light to a center of an active region of the image sensor. The measuring pattern includes a light shielding region having second open regions for transmitting light to a periphery of the active region. A first intensity of light reaching the active region after being filtered by the reference pattern and a second intensity of light reaching the image sensor after being filtered by the measuring pattern are measured. The intensity of the stray light is evaluated by a difference between the first and second light intensities.

Abstract: A method and system for measuring stray light for use in an exposure apparatus uses an image sensor to be disposed at a wafer level in the exposure apparatus. The stray light is measured by preparing a reference pattern and a measuring pattern on a reticle. The reference pattern includes a light shielding region having first open regions for transmitting light to a center of an active region of the image sensor. The measuring pattern includes a light shielding region having second open regions for transmitting light to a periphery of the active region. A first intensity of light reaching the active region after being filtered by the reference pattern and a second intensity of light reaching the image sensor after being filtered by the measuring pattern are measured. The intensity of the stray light is evaluated by a difference between the first and second light intensities.

Abstract: A stencil mask includes a membrane forming thin layer having membrane areas and a border area that limits the membrane areas. The membrane areas have a plurality of pattern areas which include an aperture through which particle beams can permeate and non-pattern areas interposed between the pattern areas. A main strut supports the membrane areas and is formed on the border area of the membrane forming thin layer. An auxiliary strut is formed in the non-pattern areas inside the membrane pattern area such that the auxiliary strut divides the membrane areas into plural divided membrane areas. The auxiliary strut supports the divided membrane areas.

Abstract: A photomask is useful in measuring the aberration of an optical lens. The photomask includes a transparent substrate, a first opaque pattern formed on a first surface of the transparent substrate and defining a plurality of apertures that expose the first surface, and a second opaque pattern formed on the second surface of the transparent substrate. The photomask is placed in an exposure apparatus between a light source of the exposure apparatus and an optical lens whose aberration is to be measured. A photoresist layer on a wafer is exposed through the photomask and the pupil of the optical lens to form a first pattern on the wafer corresponding to the second opaque pattern of the photomask. The aberration of the pupil of the optical lens is evaluated based on the relative location at which the first pattern is formed on the wafer.