Patents by Inventor Ho Gi Kim
Ho Gi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8617429Abstract: Disclosed are a composite electrode active material and a supercapacitor using the same, and more particularly, an electrode active material having M1-xRuxO3 (M=Sr, Ba, Mg) and a supercapacitor using the same, wherein the electrode active material is characterized by comprising M1-xRuxO3, where M is at least one selected from a group consisting of strontium, barium and magnesium, and a method for fabricating a composite electrode active material comprises (a) preparing a spinning solution containing a precursor of M oxide, a precursor of Ru oxide, a polymer and a solvent, (b) spinning the spinning solution on a collector to fabricate a nanofiber web having M1-xRuxO3 precursor, and (c) performing heat treatment for the nanofiber web to remove the polymer so as to make an electrode active material in the structure of porous nanofiber web having M1-xRuxO3, wherein the M comprises at least one selected from a group consisting of strontium, barium and magnesium.Type: GrantFiled: September 13, 2010Date of Patent: December 31, 2013Assignee: Korea Institute of Science and TechnologyInventors: Il Doo Kim, Yong-Won Song, Tae Seon Hyun, Ho-Gi Kim
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Patent number: 8558324Abstract: a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.Type: GrantFiled: May 4, 2009Date of Patent: October 15, 2013Assignee: Korea Institute of Science and TechnologyInventors: Il-Doo Kim, Dong-Hun Kim, Ho-Gi Kim, Nam-Gyu Cho
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Patent number: 8521408Abstract: The present invention provides a method for estimating a distance to empty (DTE) from the present amount of remaining fuel (the amount of remaining electricity) in an electric vehicle. In particular, the present invention provides a method for estimating a remaining travel distance of an electric vehicle, which can efficiently and accurately estimate a remaining travel distance by setting the relationship of a DTE with a state of charge (SOC) of a battery which changes in real time under various load conditions, in consideration of the present travel pattern, in addition to the SOC of a battery and accumulated fuel efficiency for the amount of remaining fuel of the electric vehicle.Type: GrantFiled: April 12, 2011Date of Patent: August 27, 2013Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Il Cho, Woo Sung Kim, Ho Gi Kim, Ki Taek Sung, Dong Gil Ha, Do Sung Hwang
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Publication number: 20120143435Abstract: The present invention provides a method for estimating a distance to empty (DTE) from the present amount of remaining fuel (the amount of remaining electricity) in an electric vehicle. In particular, the present invention provides a method for estimating a remaining travel distance of an electric vehicle, which can efficiently and accurately estimate a remaining travel distance by setting the relationship of a DTE with a state of charge (SOC) of a battery which changes in real time under various load conditions, in consideration of the present travel pattern, in addition to the SOC of a battery and accumulated fuel efficiency for the amount of remaining fuel of the electric vehicle.Type: ApplicationFiled: April 12, 2011Publication date: June 7, 2012Applicants: KIA MOTORS CORPORATION, HYUNDAI MOTOR COMPANYInventors: Il Cho, Woo Sung Kim, Ho Gi Kim, Ki Taek Sung, Dong Gil Ha, Do Sung Hwang
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Publication number: 20090278211Abstract: a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.Type: ApplicationFiled: May 4, 2009Publication date: November 12, 2009Inventors: ll-Doo KIM, Dong-Hun KIM, Ho-Gi KIM, Nam-Gyu CHO
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Patent number: 6576216Abstract: A method for manufacturing lithium-manganese oxide powders for use in a lithium secondary battery is provided. The method includes the steps of dissolving in nitric acid a composition selected from the group consisting of: manganese oxide, manganese carbonate, or manganese to form a manganese solution, and then dissolving in the manganese solution a composition selected from the group consisting of lithium carbonate, lithium hydroxide, or lithium acetate. Glycine is added to the mixed metal solution and the mixed metal solution is dried in a vacuum dryer to form a combustible resin. The combustible resin is then ignited at room temperature and the combusted products are calcinated.Type: GrantFiled: January 9, 2001Date of Patent: June 10, 2003Assignee: Korea Advanced Institute of Science &TechnologyInventors: Yi Sup Han, Ho Gi Kim, Kyu Sung Park
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Patent number: 6558843Abstract: A method for manufacturing LiMn2O4 powders for use in a lithium secondary battery positive electrode, is provided, in which oxide or carbonate is used as a positive electrode material, a solution is dried at a temperature higher than 150° C., and the resulting matter is put into a reaction furnace in order to be calcinated for a short time, after treating by spontaneous combustion. A certain degree of crystallization of the positive electrode powders can be obtained in the spontaneous combustion process. Thus, a battery having a large charging and discharging capacity and a long life cycle can be manufactured even under a high current condition.Type: GrantFiled: October 19, 2000Date of Patent: May 6, 2003Assignee: Korea Advanced Institute of Science and TechnologyInventors: Yi Sup Han, Ho Gi Kim
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Publication number: 20020090553Abstract: A method for manufacturing a Li—Mn oxide for use in a lithium secondary battery positive electrode, is provided, in which a proper amount of glycine is dissolved in a solution where lithium and manganese are dissolved in a nitric acid solution, the solution is dried and thermally treated after removing an organic matter with a auto-ignition method, to thereby produce a Li—Mn oxide powder which can provide an optimal battery performance. The positive electrode powders for lithium secondary battery has a considerably short thermal treatment time in comparison with a conventional solid state reaction method, to thereby provide a very inexpensive processing cost, and a battery having a high charge/discharge capacity and a long lifetime even in a high current condition since particles of the powders are very fine.Type: ApplicationFiled: January 9, 2001Publication date: July 11, 2002Inventors: Yi Sup Han, Ho Gi Kim, Kyu Sung Park
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Patent number: 6320678Abstract: A technique for copying a plurality of pages requiring different numbers of copies by displaying a message asking a user to designate the desired number of copies for each page upon feeding a plurality of pages; storing the desired number of copies inputted by the user in response to the message for each page; and scanning and storing the fed pages, and sequentially copying the pages to provide a number of copies equal to the desired number of copies.Type: GrantFiled: September 18, 1997Date of Patent: November 20, 2001Assignee: Samsung Electronics Co., Ltd.Inventor: Ho-Gi Kim
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Patent number: 6180547Abstract: Disclosed is a high dielectric capacitor composition consisting of Pb(Fe1/2Nb1/2)O3, Pb(Fe1/2Ta1/2)O3, Pb(Ni1/3Nb2/3)O3 and Pb(Zn1/3Nb2/3)O3 in association with manganese nitrate (Mn(NO3)2.4H2O). It has a dielectric constant of 10,000 or higher with a relatively low loss factor of 2.6% or less, showing the temperature properties of Y5V.Type: GrantFiled: September 9, 1999Date of Patent: January 30, 2001Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho Gi Kim, Yung Park, Kevin Knowles
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Patent number: 6096672Abstract: A microwave dielectric composition, comprising a basic composition, represented by the following formula:(Pb(1-x)Ca(x))(Zr(1-y)Sn(y))O(3)wherein x and y are molar ratios in the relation of 0.15<x<0.40 and 0.15<y<0.50, and a sintering aid represented by the following formula:a ZnO+b Sb.sub.2 O.sub.3wherein a and b are percentages relative to the total weight of the basic composition, in the relation of 0<a+b<0.05 weight %. The composition can be sintered at relatively low temperature and are superior in dielectric constant and quality factor. The low-temperature sintering yields the effects of allowing the sinters to have a fine structure and be of high long-term reliability, including high-temperature resistance and humidity resistance.Type: GrantFiled: August 13, 1998Date of Patent: August 1, 2000Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho Gi Kim, Yung Park
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Patent number: 6090455Abstract: A method for forming SBT ferroelectric thin film. Sr(C.sub.5 F.sub.6 HO.sub.2).sub.2, Bi(C.sub.6 H.sub.5).sub.3 and Ta(C.sub.2 H.sub.5 O).sub.5 are used as the precursors of Sr, Bi and Ta and bubbled at a temperature of 110-130.degree. C., 140-160.degree. C., and 120-140.degree. C., respectively. The deposition of the precursors on a substrate is carried out at 500-550.degree. C. in plasma by using an RF power of 100-150 W. Having a residual polarity (Pr) of 15 .mu.C/cm.sup.2 or higher and a coercive electric field (Ec) of 50 kV/cm or less and, the SBT ferroelectric thin film does not show a fatigue phenomenon until 1.times.10.sup.11 cycles as measured under 6V bipolar square pulse in the structure comprising Pt upper and lower electrodes and thus, can be applied for non-volatile memory devices.Type: GrantFiled: August 5, 1998Date of Patent: July 18, 2000Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho Gi Kim, Won Jae Lee, Soon Gil Yoon, Joon Hyung Ahn
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Patent number: 6028021Abstract: A microwave dielectric composition superior in all dielectric constant, product of resonant frequency by quality coefficient and temperature-dependent coefficient of resonant frequency, can be prepared by mixing a main oxide formulation consisting of lead oxide, calcium oxide, zirconium oxide and tin oxide with manganous nitrate (Mn(NO.sub.3).sub.2.4H.sub.2 O), calcining the mixture at a temperature of about 1,000 to 1,200.degree. C., pulverizing and molding the mixture, and sintering the molded body at a temperature of about 1,200 to 1,550.degree. C. in an oxygen atmosphere. It is 100 or greater in dielectric constant, 4,000 or greater in the product of resonant frequency by quality coefficient and .+-.3 mmp/.degree. C. or less in temperature-dependent coefficient of resonant frequency.Type: GrantFiled: June 30, 1998Date of Patent: February 22, 2000Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho Gi Kim, Yung Park, Tae Suk Chung
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Patent number: 5866494Abstract: The present invention relates to a laminated ceramic composition which has a high dielectric constant and a low decrease rate of dielectric constant at DC bias, which can be used for bypass of computer module IC. The present invention provides a ceramic condenser composition which comprises BaTiO.sub.3, TiO.sub.2, CeO.sub.2 and Sm.sub.2 O.sub.3 by the molar ratio to satisfy the equation of (1-X-Y)BaTiO.sub.3 -X(CeO.sub.2)-Y(Sm.sub.2 O.sub.3)-(1.5X+3Y)TiO.sub.2 (wherein, 0.01<X+Y<0.05 and 0.015<1.5X+3Y<0.15). The composition has an excellent dielectric characteristics, since it has a high dielectric constant of 7000 or more at a temperature range of 50.degree. to 70.degree. C. which permits normal operations of IC, and a decrease rate of dielectric constant of below 10% at DC bias of 1 V/.mu.m. Accordingly, the ceramic composition of the invention can be applied for the development of a laminated ceramic condenser for bypass of computer module IC.Type: GrantFiled: August 13, 1997Date of Patent: February 2, 1999Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho-Gi Kim, Yung Park, Yong-Joon Park
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Patent number: 5843860Abstract: The present invention provides to a ceramic composition for high-frequency dielectrics which comprises the main ingredients of ZrO.sub.2, SnO.sub.2 and TiO.sub.2 and a subsidiary ingredient of (Mn(NO.sub.3).sub.2.4H.sub.2 O). In accordance with the present invention, a homogeneous ceramic composition can be prepared by a process which comprises the steps of: adding ZrO.sub.2, SnO.sub.2 and TiO.sub.2 by the molar ratio to satisfy (ZrO.sub.2).sub.1-x (SnO.sub.2).sub.x (TiO.sub.2).sub.1+y (wherein, 0.1M<x<0.4M and 0M<y<0.1M); melting and grinding the mixture at 1900.degree. C. or above; and, adding 1% or less of Mn(NO.sub.3).sub.2.4H.sub.2 O by weight of MnO to the mixture. The ceramic composition of the invention has a high dielectric constant of 40 or more, a quality factor of 7000 or more, and a temperature coefficient of resonance frequency below 10. Accordingly, it can be used for an integrated circuit at microwave as well as at high frequency, or for dielectric resonators.Type: GrantFiled: August 13, 1997Date of Patent: December 1, 1998Assignee: Korea Advanced Institute of Science and TechnologyInventors: Ho-Gi Kim, Yung Park
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Patent number: 5827571Abstract: The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers.Type: GrantFiled: September 17, 1997Date of Patent: October 27, 1998Assignee: Hyundai Electronics Industries Co., Ltd.Inventors: Seaung Suk Lee, Ho Gi Kim, Jong Choul Kim, Soo Han Choi