Abstract: In a method for controlling an operation of a sphere type shifting apparatus, and according to an exemplary embodiment of the present disclosure, it is possible to prevent a sphere mechanism from being separated from a rotation completion location upon rotation operation of the sphere mechanism including a shifting unit provided on a hemispherical one side thereof and a design unit provided on a hemispherical other side thereof, preventing occurrence of clearance of the sphere mechanism, and to terminate an operation of a motor as necessary when the sphere mechanism cannot reach the rotation completion location due to sticking thereof or foreign substances stuck thereto upon rotation operation of the sphere mechanism, preventing damage to parts.

Abstract: In a method for controlling an operation of a sphere type shifting apparatus, and according to an exemplary embodiment of the present disclosure, it is possible to prevent a sphere mechanism from being separated from a rotation completion location upon rotation operation of the sphere mechanism including a shifting unit provided on a hemispherical one side thereof and a design unit provided on a hemispherical other side thereof, preventing occurrence of clearance of the sphere mechanism, and to terminate an operation of a motor as necessary when the sphere mechanism cannot reach the rotation completion location due to sticking thereof or foreign substances stuck thereto upon rotation operation of the sphere mechanism, preventing damage to parts.

Abstract: A method for fabricating a fin type transistor uniformly implants in targeted regions. The method includes forming a fin protruding in a Z-axis direction from a substrate positioned on an XY. A first region and a second region are included in the substrate and a gate is formed crossing the second region in X-axis direction. An implantation is performed on at least a portion of the second region. The fin is rotated through a first angle, another implantation is performed on at least a portion of the second region, and the fin is rotated again through a second angle, different from the first angle.

Abstract: A vacuum system for manufacturing semiconductor devices and a method of using the same increase the production yield of wafers by preventing contamination due to mist formation inside chambers, and minimizing production of inferior wafers. The vacuum system has a vent gas supply apparatus for supplying a vent gas into a chamber in the vacuum state so as to form an atmospheric state therein, so as to prepare the chamber for opening to the outside. The vent gas supply apparatus includes a heater for preheating the vent gas. The method includes supplying a vent gas into the chamber, which is sealed with a vacuum state after completing a process; unloading the processed wafers from the chamber while the vent gas is continuously supplied; loading wafers to be processed into the chamber while the vent gas is continuously supplied; and forming a vacuum inside the chamber after sealing the chamber and shutting off the supply of the vent gas.