Abstract: A single event upset hardened memory cell to be utilized in static random access memories is disclosed. The single event upset hardened memory cell includes a first set of cross-coupled transistors, a second set of cross-coupled transistors, and a set of isolation transistors. The set of isolation transistors is coupled to the first set of cross-coupled transistors such that two inversion paths are formed between the cross-coupled transistors and the isolation transistors.

Abstract: A multiplexor having a single event upset (SEU) hardened data keeper circuit is disclosed. The multiplexor includes a precharge transistor, an isolation transistor, an invertor, and an SEU immune storage cell. Both the gate of the precharge transistor and the gate of the isolation transistor are connected to a clock signal. The SEU immune storage cell has a first access node and a second access node. The first access node is complementary to the second access node. The first access node is connected to the precharge transistor and the second access node is connected to the isolation transistor. The invertor is coupled between the precharge transistor and the isolation transistor.

Abstract: A single event upset hardened memory cell to be utilized in static random access memories is disclosed. The single event upset hardened memory cell includes a first set of cross-coupled transistors, a second set of cross-coupled transistors, a first set of isolation transistors, and a second set of isolation transistors. The first and second sets of isolation transistors are coupled to the first and second set of cross-coupled transistors, respectively, such that two inversion paths are formed between the cross-coupled transistors and the isolation transistors.