Patents by Inventor Ho Gun CHA

Ho Gun CHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160315040
    Abstract: Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.
    Type: Application
    Filed: April 21, 2016
    Publication date: October 27, 2016
    Inventors: Jae Yeol SON, Jeong Tak MOON, Jae Hun SONG, Young Woo LEE, Eung Jae KIM, Su-Yong RYU, Hui Joong KIM, Ho Gun CHA, Ik Joo MAENG, Chan Goo YOO
  • Publication number: 20160256962
    Abstract: A solder ball includes about 1.0 wt % to about 2.0 wt % silver (Ag), about 4.0 wt % to about 8.0 wt % indium (In), about 10.0 wt % to about 20.0 wt % bismuth (Bi), about 0.005 wt % to about 0.1 wt % deoxidizer, and the balance of tin (Sn). A melting point of the solder is about 170° C. to about 190° C.
    Type: Application
    Filed: February 16, 2016
    Publication date: September 8, 2016
    Applicant: MK Electron Co., Ltd.
    Inventors: Hui Joong KIM, Jae Hun SONG, Young Woo LEE, Jae Hong LEE, Jae Yeol SON, Eung Jae KIM, Ho Gun CHA
  • Patent number: 9391039
    Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: July 12, 2016
    Assignee: MK Electron Co., Ltd.
    Inventors: Jeong Tak Moon, Jae Yeol Son, Santosh Kumar, Eung Jae Kim, Hui Joong Kim, Ho Gun Cha
  • Publication number: 20150380373
    Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
    Type: Application
    Filed: July 30, 2014
    Publication date: December 31, 2015
    Inventors: Jeong Tak MOON, Jae Yeol SON, Santosh KUMAR, Eung Jae KIM, Hui Joong KIM, Ho Gun CHA