Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode disposed alternately with the dielectric layer; and an external electrode disposed on the body, wherein the dielectric layer includes a first region extending from an interfacial surface with the internal electrode to 50 nm of the dielectric layer in an inward direction and a second region excluding the first region, and wherein, in the first region, an average content of In based on overall elements excluding oxygen is 0.5 at % or more and 2.0 at % or less, and an average content of Sn based on overall elements excluding oxygen is 0.5 at % or more and 1.75 at % or less.

Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.

Abstract: A composition for an organic optoelectronic device an organic optoelectronic device, and a display device, the composition including a first compound; a second compound; and a third compound, wherein the first compound, the second compound, and the third compound are different from each other, the first compound is represented by Chemical Formula I, the second compound is represented by Chemical Formula I, and the third compound is represented by Chemical Formula II or Chemical Formula III:

Abstract: In a method and device for cell (re)selection in an EMB-based non-terrestrial network. the method of a UE includes the steps of: configuring a candidate cell set which is a set of one or more neighboring cells having a cell timer value greater than the sum of a cell service timer value of a serving cell and a second value among at least one neighboring cell; selecting a candidate cell among the one or more neighboring cells on the basis of the SAT service timer value of each of the one or more neighboring cells belonging to the candidate cell set; and performing a procedure for configuring a connection with the candidate cell.

Abstract: A curable composition or a thermal interface material exhibiting low adhesion force to a predetermined adherend while having a low density as well as exhibiting a high thermal conductivity is provided. It also has excellent flame retardant properties, and exhibits ejection properties and thixotropy suitable for processes in a state where halogen flame retardants or phosphorus-based flame retardants are not used, or the use ratio thereof is minimized.

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

Abstract: The present invention relates to an observation apparatus which changes and moves planar position coordinates of a moving object connected to an observation unit, so as to adjust an observation direction of the observation unit and a change speed of the observation direction, such that objects moving at low to high speeds can be tracked and observed, and objects in the celestial direction can be observed.

Abstract: A semiconductor memory device comprises a substrate; a mold structure on the substrate; a plurality of channel structures extending in the mold structure; a source layer and a source sacrificial layer between the substrate and the mold structure, wherein the source sacrificial layer is spaced apart from the source layer; and a source support layer on the source layer and the source sacrificial layer, wherein the source support layer is between the source layer and the source sacrificial layer, wherein an upper surface of the source support layer includes first and second portions extending parallel to the substrate, and a third portion that connects the first and second portions, wherein a vertical distance from an upper surface of the source layer to the first portion is smaller than a vertical distance from an upper surface of the substrate to the second portion.

Abstract: Provided are a method and apparatus for providing a network switching service to a user equipment.

Abstract: Provided are a method and apparatus for a user equipment, a core network, and a second device to enable bidirectional communication for second devices. The method of the second device may include receiving internet protocol (IP) configuration information for automatically configuring an IP version 6 (IPv6) address of the second device from a core network through a user equipment; generating the IPv6 address using information in the IP configuration information; and transmitting the generated IPv6 address to the core network through the UE.

Abstract: Disclosed is a method of processing item sales information by an electronic apparatus including acquiring a purchase request including item information related to an item selected by a user and information related to a payment means, providing a purchase response including approval information corresponding to the purchase request before proceeding with payment through the payment means in response to the purchase request when the information related to the payment means satisfies a first condition, transmitting a release request for the item to a first server; and requesting payment for at least some of an amount corresponding to one or more purchase requests related to the payment means according to an arrival of settlement timing corresponding to the payment means.

Abstract: Provided are a method and apparatus for providing a multi virtual local area network service to user equipments.

Abstract: Disclosed is an exoskeleton-type rehabilitation robot system, including: a body part provided on a chair in which a user sits and provided with a robot arm capable of moving left or right based on the user seated on the chair; a conversion part configured to convert a position of the robot arm with respect to the body part; a driving part configured to articulate the robot arm with respect to the body part; and a controller configured to detect a change in a position of the robot arm and control a left or right driving mode of the driving part according to the position of the robot arm. In accordance with such a configuration, the exoskeleton-type rehabilitation robot system of the present invention is provided integrally with a chair, thereby having excellent space utilization. In addition, the user's initial preparation for rehabilitation training is simple, which can improve efficiency.

Abstract: A quantization device includes: a trellis-structured vector quantizer which quantizes a first error vector between an N-dimensional (here, “N” is two or more) subvector and a first predictive vector; and an inter-frame predictor which generates a first predictive vector from the quantized N-dimensional subvector, wherein the inter-frame predictor uses a predictive coefficient comprising an N×N matrix and performs an inter-frame prediction using the quantized N-dimensional subvector of a previous stage.

Abstract: Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.

Abstract: Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge which can be a cause to product failure. More particularly, the ESD device provided includes a Zener diode and a plurality of PN diodes by improving the architecture of an area wherein a Zener diode is configured compared to alternatives, to provide improved functionality when protecting against ESD events.

Abstract: Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge which can be a cause to product failure. More particularly, the ESD device provided includes a Zener diode and a plurality of PN diodes by improving the architecture of an area wherein a Zener diode is configured compared to alternatives, to provide improved functionality when protecting against ESD events.

Abstract: Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.

Abstract: Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.

Abstract: Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.