Patents by Inventor Ho-Ik Hwang

Ho-Ik Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor structure of semiconductor device and method for forming the same
    Patent number: 6621111
    Abstract: A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: September 16, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Ho-Ik Hwang
  • Capacitor structure of semiconductor device and method for forming the same
    Publication number: 20030104668
    Abstract: A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.
    Type: Application
    Filed: October 24, 2002
    Publication date: June 5, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Ho-Ik Hwang