Abstract: Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template.

Abstract: Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: A susceptor and a chemical vapor deposition (CVD) apparatus including the same. The susceptor has a shape of a disk with a hollow and includes a plurality of pockets formed in an upper surface of the susceptor to accommodate deposition targets; and susceptor channels formed in the susceptor to supply a flowing gas to the plurality of pockets. Inlets of the susceptor channels are formed in a sidewall of the hollow. Alternatively, the inlets of the susceptor channels are formed in a lower surface of the susceptor and a reinforcement unit is further formed.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: Provided are a susceptor and a chemical vapor deposition (CVD) apparatus including the susceptor. The susceptor has a simple structure and is configured to prevent bending of a substrate for uniformly heating the substrate and maintain wavelength uniformity of an epitaxial layer formed on the substrate.

Abstract: There are provided a susceptor and a chemical vapor deposition apparatus including the same. The susceptor includes: at least one pocket accommodating a deposition object therein; a seating part stepped downward from a top end of the pocket, the seating part having the deposition object placed thereon; and a recess recessed from the seating part to a predetermined depth, wherein the recess has a radius of curvature ranging from substantially 8000 mm to 25000 mm.