Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.

Abstract: A charging cable for an electric vehicle includes a cable main body having a flat cross-section in a width direction thereof and partitioned into a plurality of internal regions. The charging cable includes terminal portions through which positive and negative power cables, a communication/sensor cable, a coolant flow channel, and a ground pass into the plurality of internal regions, respectively. The terminal portions are arranged in a row in the width direction of the cable main body.

Abstract: Disclosed herein is a front module having a triplexer. According to a preferred embodiment of the present invention, the front module includes: a triplexer receiving and distributing a MoCA receiving signal and a cable broadcasting signal from a coaxial cable and receiving the MoCA transmitting signal and outputting the received MoCA transmitting signal to the coaxial cable; a transceiver for MoCA removing and outputting noise from the MoCA receiving signal input through the triplexer and amplifying the MoCA transmitting signal input from the outside and providing the amplified MoCA transmitting signal to the triplexer; and a receiver for cable removing and outputting noise from the cable broadcasting signal input through the triplexer.

Abstract: Embodiments of the invention provide an integrated front module of a set top box, including a signal receiver configured to receive broadcasting signals transmitted through different transmission media, a controller configured to control the signal receiver to receive the broadcasting signals and to transform the received broadcasting signals into image and voice signals, and a signal transformer configured to transform and output the image and voice signals into a radio frequency (RF) signal.

Abstract: Disclosed herein is a front module having a triplexer. According to a preferred embodiment of the present invention, the front module includes: a triplexer receiving and distributing a MoCA receiving signal and a cable broadcasting signal from a coaxial cable and receiving the MoCA transmitting signal and outputting the received MoCA transmitting signal to the coaxial cable; a transceiver for MoCA removing and outputting noise from the MoCA receiving signal input through the triplexer and amplifying the MoCA transmitting signal input from the outside and providing the amplified MoCA transmitting signal to the triplexer; and a receiver for cable removing and outputting noise from the cable broadcasting signal input through the triplexer.

Abstract: An embodiment of a photomask for forming gate lines and a method of manufacturing semiconductor devices using the photomask is disclosed. The photomask includes a photomask substrate, gate line mask patterns that define gate lines that cross at least one active region on a semiconductor substrate, and that are arranged in parallel, gate tab mask patterns formed on both sides of each gate line mask pattern, and joints formed between adjacent gate tab mask patterns, and that include a separation region. A relatively large gate tab mask pattern can be formed using the photomask. And a short channel effect at the boundary of the active region can be improved with the large gate tab mask pattern, so the characteristics and reliability of the semiconductor devices can be improved.

Abstract: A semiconductor device having a recessed landing pad includes a semiconductor substrate and a lower interlayer dielectric layer disposed on the semiconductor substrate. A first landing pad is disposed through the lower interlayer dielectric layer to be in contact with the semiconductor substrate. A second landing pad is disposed through the lower interlayer dielectric layer to also be in contact with the semiconductor substrate. A metal silicide layer is disposed on the second landing pad. The metal silicide layer is disposed lower than a top surface of the first landing pad. An intermediate interlayer dielectric layer is disposed on the lower interlayer dielectric layer. A conductive line is disposed on the intermediate interlayer dielectric layer. A contact plug is disposed between the conductive line and the metal silicide layer. A designed contact area between the metal silicide layer and the contact plug is protected against inadvertent etching.

Abstract: A semiconductor device includes a semiconductor substrate and recess trenches formed on the semiconductor substrate. The recess trenches are arranged to extend along a first direction. Terminal regions of adjacent ones of the recess trenches are offset relative to each other along a second direction substantially perpendicular to the first direction.

Abstract: A photo mask, a semiconductor integrated circuit, and a method of manufacturing the same are provided. The photo mask includes light transmitting rows and recess trenches, respectively, that include a short region in every other light transmitting row. In the semiconductor integrated circuit, the short region may include a dummy transistor so that short-circuiting bridges that may occur between adjacent recess trenches will not adversely affect the operations of the semiconductor integrated circuit.

Abstract: An embodiment of a photomask for forming gate lines and a method of manufacturing semiconductor devices using the photomask is disclosed. The photomask includes a photomask substrate, gate line mask patterns that define gate lines that cross at least one active region on a semiconductor substrate, and that are arranged in parallel, gate tab mask patterns formed on both sides of each gate line mask pattern, and joints formed between adjacent gate tab mask patterns, and that include a separation region. A relatively large gate tab mask pattern can be formed using the photomask. And a short channel effect at the boundary of the active region can be improved with the large gate tab mask pattern, so the characteristics and reliability of the semiconductor devices can be improved.

Abstract: A method of fabricating a semiconductor device, including forming contact pads in a first insulating layer on a substrate, forming a second insulating layer on the first insulating layer and on the contact pads, forming bit lines on the second insulating layer, the bit lines connected to a first plurality of the contact pads by bit line contact plugs, forming expanded contact holes in the second insulating layer between the bit lines, wherein the expanded contact holes are expanded toward the bit lines, and forming contact spacers on side walls of the expanded contact holes.

Abstract: A semiconductor device having a recessed landing pad includes a semiconductor substrate and a lower interlayer dielectric layer disposed on the semiconductor substrate. A first landing pad is disposed through the lower interlayer dielectric layer to be in contact with the semiconductor substrate. A second landing pad is disposed through the lower interlayer dielectric layer to also be in contact with the semiconductor substrate. A metal silicide layer is disposed on the second landing pad. The metal silicide layer is disposed lower than a top surface of the first landing pad. An intermediate interlayer dielectric layer is disposed on the lower interlayer dielectric layer. A conductive line is disposed on the intermediate interlayer dielectric layer. A contact plug is disposed between the conductive line and the metal silicide layer. A designed contact area between the metal silicide layer and the contact plug is protected against inadvertent etching.