Abstract: The present invention relates to a cell culture vessel. Specifically, the present invention relates to a cell culture vessel capable of obtaining a clean image by preventing occurrence of distortion and dew condensation when performing an imaging acquisition operation on cells cultured in the cell culture vessel.

Abstract: Provided are an artificial intelligence (AI) system and an application thereof, which simulate functions of a human brain, such as recognition and determination, by using a machine learning algorithm, such as deep-learning. A method of processing, by a device, a keyboard input, based on training, may include: displaying a keyboard on a screen of the device; receiving a swipe input of a user, the swipe input connecting a plurality of keys on a displayed keyboard; extracting a trajectory connecting the plurality of keys; applying, to a trained model for a keyboard input, based on the trajectory, trajectory information indicating a shape of the trajectory and a relative position of the trajectory with respect to the keyboard; and determining at least one character corresponding to the trajectory, based on a result of the applying the trajectory information.

Abstract: Disclosed is a high voltage semiconductor device. More particularly, a high voltage semiconductor device is disclosed, including a slope compensating structure on at least a portion of an outermost surface of a gate spacer defining a sidewall of a gate structure, thereby reducing or preventing electric field concentration in a corner of a gate field plate, and thus improving reliability of the device.

Abstract: The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.

Abstract: The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.

Abstract: The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.

Abstract: A coil component includes a body part containing a magnetic material, a coil part disposed in the body part, and an electrode part disposed on the body part. The coil part includes a support member, a first coil layer disposed on at least one surface of the support member, a first insulating layer stacked on at least one surface of the support member and covering the first coil layer, and a second coil layer disposed on the first insulating layer. The first and second coil layers are electrically connected to each other, and the second coil layer has a larger number of coil turns than the first coil layer. Additionally or alternatively, a conductor of the first coil layer has an aspect ratio less than 1. Methods of manufacturing such coil components are also provided.

Abstract: A coil component includes a body part containing a magnetic material, a coil part disposed in the body part, and an electrode part disposed on the body part. The coil part includes a support member, a first coil layer disposed on at least one surface of the support member, a first insulating layer stacked on at least one surface of the support member and covering the first coil layer, and a second coil layer disposed on the first insulating layer. The first and second coil layers are electrically connected to each other, and the second coil layer has a larger number of coil turns than the first coil layer. Additionally or alternatively, a conductor of the first coil layer has an aspect ratio less than 1. Methods of manufacturing such coil components are also provided.

Abstract: A coil component includes a body part containing a magnetic material, a coil part disposed in the body part, and an electrode part disposed on the body part. The coil part includes a support member, a first coil layer disposed on at least one surface of the support member, a first insulating layer stacked on at least one surface of the support member and covering the first coil layer, and a second coil layer disposed on the first insulating layer. The first and second coil layers are electrically connected to each other, and the second coil layer has a larger number of coil turns than the first coil layer. Additionally or alternatively, a conductor of the first coil layer has an aspect ratio less than 1. Methods of manufacturing such coil components are also provided.

Abstract: Disclosed herein are a thin film common mode filter and a method of manufacturing the same. The thin film common mode filter according to the exemplary embodiment of the present invention includes a magnetic substrate made of a magnetic ceramic material; and coil patterns formed on the magnetic substrate, wherein external electrodes connected with the coil patterns are sequentially stacked and insulating layers formed on and beneath the coil pattern are made of a composite of ferrite powder and thermosetting resin.

Abstract: A coil component includes a body part containing a magnetic material, a coil part disposed in the body part, and an electrode part disposed on the body part. The coil part includes a support member, a first coil layer disposed on at least one surface of the support member, a first insulating layer stacked on at least one surface of the support member and covering the first coil layer, and a second coil layer disposed on the first insulating layer. The first and second coil layers are electrically connected to each other, and the second coil layer has a larger number of coil turns than the first coil layer. Additionally or alternatively, a conductor of the first coil layer has an aspect ratio less than 1. Methods of manufacturing such coil components are also provided.

Abstract: Disclosed herein is a common mode filter including: a body element including an insulating member enclosing a coil electrode pattern and a magnetic member disposed on one surface or both surfaces of the insulating member; and an insulating layer disposed on at least one side of the body element, thereby increasing an interlayer adhesion between the respective components configuring the common mode filter.

Abstract: Disclosed herein is a common mode filter including an internal electrode manufactured in a coil electrode form and provided with a simultaneous coil pattern in which two coil electrodes are overlapped with each other in a single layer in a direction in which a coil is wound, wherein a height of a second insulating layer formed on the internal electrode is higher than an interval between the coils. Therefore, a portion at which a parasitic capacitance is generated may be basically blocked, and a self resonant frequency (SRF) may be increased while filtering performance as the common mode filter is maintained.

Abstract: The present invention relates to a common mode filter. A common mode filter in accordance with the present invention includes a magnetic substrate formed of a magnetic ceramic material; a first coil pattern and a second coil pattern sequentially formed on the magnetic substrate; an external electrode laminated on the second coil pattern; a via for connecting the first coil pattern and the second coil pattern; and a second insulating layer formed between the first coil pattern and the second coil pattern, wherein the height of the second insulating layer is 5 ?m to 20 ?m while being proportional to the height of the via and thus it is possible to improve SRF and insertion loss characteristics by adjusting the height of the second insulating layer.

Abstract: Disclosed herein are a thin film common mode filter and a method of manufacturing the same. The thin film common mode filter according to the exemplary embodiment of the present invention includes a magnetic substrate made of a magnetic ceramic material; and coil patterns formed on the magnetic substrate, wherein external electrodes connected with the coil patterns are sequentially stacked and insulating layers formed on and beneath the coil pattern are made of a composite of ferrite powder and thermosetting resin.

Abstract: Disclosed herein is a common mode filter including: a body element including an insulating member enclosing a coil electrode pattern and a magnetic member disposed on one surface or both surfaces of the insulating member; and an insulating layer disposed on at least one side of the body element, thereby increasing an interlayer adhesion between the respective components configuring the common mode filter.

Abstract: Disclosed herein is a common mode filter including an internal electrode manufactured in a coil electrode form and provided with a simultaneous coil pattern in which two coil electrodes are overlapped with each other in a single layer in a direction in which a coil is wound, wherein a height of a second insulating layer formed on the internal electrode is higher than an interval between the coils. Therefore, a portion at which a parasitic capacitance is generated may be basically blocked, and a self resonant frequency (SRF) may be increased while filtering performance as the common mode filter is maintained.

Abstract: Provided is a method of manufacturing a lithium ion capacitor. The method includes the steps of: contacting a lithium supplying source to an anode directly; pre-doping lithium ions into the anode by immerging the anode and the lithium supplying source into a doping electrolyte solution; forming an electrode cell by sequentially stacking the lithium ions on the pre-doped anode and a cathode with placing a separator therebetween; cleaning the doping electrolyte solution absorbed to terminals of the electrode cell; fusing the terminals; and sealing the electrode cell with exposing the fused terminal.

Abstract: The present invention relates to an electrode for an energy storage and a method for manufacturing the same and provides a useful effect of improving resistance characteristics of an electrode for an energy storage and strengthening adhesion by forming trenches of predetermined dimensions on a surface of a current collector, forming a conductive layer, which includes a conductive agent as much as possible, on the surface of the current collector, and forming a bonding layer including an active material, a conductive agent, and a binder and an electrode layer including an active material and a binder on the conductive layer.

Abstract: The present invention relates to an electric double layer capacitor including electrodes using a cathode current collector and an anode current collector with different thicknesses. According to the present invention, the cathode current collector is formed to be relatively thin compared to the anode current collector so that an electrode structure has the two electrode current collectors with different thicknesses. Therefore, it is possible to minimize capacity reduction compared to conventional methods and improve energy density of a cell by improving a withstand voltage of the cell.