Patents by Inventor Ho Jun BYUN

Ho Jun BYUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240336838
    Abstract: A compound of the general formula (I): A3BF2M1-xTxO2-2xF4+2x doped with Mn(IV), in which A is selected from the group consisting of Li, Na, K, Rb, Cs, Cu, Ag, Tl, NH4, NR4 and mixtures of two or more thereof, where R is an alkyl or aryl group, B is selected from the group consisting of H and D and mixtures thereof, where D is Deuterium, M is selected from the group consisting of Cr, Mo, W, Te, Re and mixtures of two or more thereof, T is selected from the group consisting of Si, Ge, Sn, Ti, Pb, Ce, Zr, Hf and mixtures of two or more thereof, and 0?x?1.
    Type: Application
    Filed: June 17, 2024
    Publication date: October 10, 2024
    Applicants: Seoul Semiconductor Co., Ltd., LITEC-VERMÖGENSVERWAL TUNGSGESELLSCHAFT MBH
    Inventors: Thomas Jansen, Ho Jun BYUN, lnbeom SONG, Bo Yong HAN, Benjamin Kistner, Stefan Tews
  • Patent number: 12018194
    Abstract: A compound of the general formula (I): A3BF2M1?xTxO2?2xF4+2x doped with Mn(IV), in which A is selected from the group consisting of Li, Na, K, Rb, Cs, Cu, Ag, Tl, NH4, NR4 and mixtures of two or more thereof, where R is an alkyl or aryl group, B is selected from the group consisting of H and D and mixtures thereof, where D is Deuterium, M is selected from the group consisting of Cr, Mo, W, Te, Re and mixtures of two or more thereof, T is selected from the group consisting of Si, Ge, Sn, Ti, Pb, Ce, Zr, Hf and mixtures of two or more thereof, and 0?x?1.
    Type: Grant
    Filed: August 18, 2022
    Date of Patent: June 25, 2024
    Assignees: Seoul Semiconductor Co., Ltd., LITEC-VERMÖGENSVERWALTUNGSGESELLSCHAFT MBH
    Inventors: Thomas Jansen, Ho Jun Byun, Inbeom Song, Bo Yong Han, Benjamin Kistner, Stefan Tews
  • Publication number: 20230231085
    Abstract: A light emitting device including a housing including walls defining a cavity having one side thereof opened, a light emitter to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips, a reflective region in the housing to reflect light, and a wavelength conversion layer disposed on the light emitter and including a first wavelength converter and a second wavelength converter to emit light having different peak wavelengths from each other, in which the first wavelength converter has a first excitation peak wavelength and the second wavelength converter has a second excitation peak wavelength, and the second wavelength converter includes a fluoride-based red phosphor represented by A2MF6:Mn4+, where A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.
    Type: Application
    Filed: March 20, 2023
    Publication date: July 20, 2023
    Inventors: Ho Jun BYUN, Bo Yong Han
  • Patent number: 11611020
    Abstract: A light emitting element including a housing having a cavity and an inner wall, a light emitting part disposed in the cavity to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips spaced apart from each other, a lead portion to supply external electric power, and a wavelength converter including a first phosphor layer including a first phosphor to emit light having a peak wavelength in a green wavelength band, and a second phosphor layer including a second phosphor to emit light having a peak wavelength in a red wavelength band, in which the second phosphor includes at least one of a nitride-based red phosphor and a fluoride-based red phosphor represented by A2MF6:Mn4+, A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: March 21, 2023
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Ho Jun Byun, Bo Yong Han
  • Publication number: 20230083851
    Abstract: A compound of the general formula (I): A3BF2M1?xTxO2?2xF4+2x doped with Mn(IV), in which A is selected from the group consisting of Li, Na, K, Rb, Cs, Cu, Ag, Tl, NH4, NR4 and mixtures of two or more thereof, where R is an alkyl or aryl group, B is selected from the group consisting of H and D and mixtures thereof, where D is Deuterium, M is selected from the group consisting of Cr, Mo, W, Te, Re and mixtures of two or more thereof, T is selected from the group consisting of Si, Ge, Sn, Ti, Pb, Ce, Zr, Hf and mixtures of two or more thereof, and 0?x?1.
    Type: Application
    Filed: August 18, 2022
    Publication date: March 16, 2023
    Inventors: Thomas Jansen, Ho Jun Byun, Inbeom Song, Bo Yong Hann, Benjamin Kistner, Stefan Tews
  • Publication number: 20200411733
    Abstract: A light emitting element including a housing having a cavity and an inner wall, a light emitting part disposed in the cavity to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips spaced apart from each other, and a wavelength converter including a first phosphor layer including a first phosphor to emit light having a peak wavelength in a green wavelength band, and a second phosphor layer including a second phosphor to emit light having a peak wavelength in a red wavelength band, in which the second phosphor includes at least one of a nitride-based red phosphor and a fluoride-based red phosphor represented by A2MF6:Mn4+, A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.
    Type: Application
    Filed: September 15, 2020
    Publication date: December 31, 2020
    Inventors: Ho Jun BYUN, Bo Yong HAN
  • Patent number: 10510933
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 17, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Publication number: 20190363225
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.
    Type: Application
    Filed: August 12, 2019
    Publication date: November 28, 2019
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
  • Patent number: 10424697
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: September 24, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Publication number: 20190237636
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Application
    Filed: April 1, 2019
    Publication date: August 1, 2019
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
  • Patent number: 10249801
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: April 2, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Publication number: 20190013446
    Abstract: A light emitting element including a first light emitting diode chip to emit emitting light having a peak wavelength in the range of 350 nm to 420 nm, a second light emitting diode chip separated from the first light emitting diode chip and to emit emitting light having a peak wavelength in the range of 430 nm to 470 nm, a green phosphor formed on the first light emitting diode chip, and a red phosphor formed on the second light emitting diode chip, in which the green phosphor includes a BAM-based green phosphor.
    Type: Application
    Filed: December 16, 2016
    Publication date: January 10, 2019
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventors: Ho Jun BYUN, Bo Yong HAN
  • Publication number: 20170309796
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
  • Patent number: 9741907
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: August 22, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Patent number: 9735322
    Abstract: The present invention relates to a light-emitting diode package comprising a high-strength molding part. The light-emitting diode package, according to the present invention, comprises: a housing; at least one light-emitting diode chip disposed in the housing; a molding part which covers the at least one light-emitting diode chip; a first phosphor excited by the at least one light-emitting diode chip so as to emit green light; and a second phosphor excited by the at least one light-emitting diode chip so as to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc/m2/day or less, and the second phosphor can emit red light having a full width at half maximum of 20 nm or less.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: August 15, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Ki Bum Nam
  • Publication number: 20170018692
    Abstract: The present invention relates to a light-emitting diode package comprising a high-strength molding part. The light-emitting diode package, according to the present invention, comprises: a housing; at least one light-emitting diode chip disposed in the housing; a molding part which covers the at least one light-emitting diode chip; a first phosphor excited by the at least one light-emitting diode chip so as to emit green light; and a second phosphor excited by the at least one light-emitting diode chip so as to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc/m2/day or less, and the second phosphor can emit red light having a full width at half maximum of 20 nm or less.
    Type: Application
    Filed: February 23, 2015
    Publication date: January 19, 2017
    Inventors: Kwang Yong OH, Ho Jun BYUN, Ki Bun NAM
  • Publication number: 20160049560
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Application
    Filed: August 18, 2015
    Publication date: February 18, 2016
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM