Abstract: Provided is a refrigerator including a main body including a storeroom, a door body arranged to open or close the storeroom, a decoration panel coupled to a front side of the door body, and a holder mounted on the front side of the door body to be coupled to the decoration panel. The door body includes a rear case defining a rear side of the door body, and a main case defining front and sides of the door body. The main case includes a front part defining the front side of the door body and having an installation groove in which to install the holder, side parts defining sides of the door body, and a rear coupler coupled to the rear case. The main case is formed by bending a single metal board.

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.