Abstract: A pyrolysis system for waste includes: a pyrolysis apparatus configured to receive waste and generate combustible gas by pyrolyzing the received waste; an emulsification apparatus connected to the pyrolysis apparatus and configured to produce pyrolysis oil by cooling condensable gas among the combustible gas generated by the pyrolysis apparatus and discharge non-condensable gas; and a combustion furnace connected to the emulsification apparatus and configured to receive and combust the non-condensable gas discharged from the emulsification apparatus, where the combustion furnace is configured to generate hot air by combusting the non-condensable gas, and supply the hot air to the pyrolysis apparatus to pyrolyze the waste.

Abstract: Provided herein is a method of measuring a refractive index of a semiconductor memory device and a method of classifying a product group of a semiconductor memory device using the same. The method of measuring a refractive index of a semiconductor memory device includes measuring a positive breakdown voltage and a negative breakdown voltage of each of memory cells coupled to a selected word line. The method also includes checking a refractive index of a charge storage layer of each of the memory cells based on the measured positive breakdown voltage and the measured negative breakdown voltage.

Abstract: A data storage device includes a non-volatile memory device, which includes a memory cell array including a plurality of memory cells and a control circuit. Each of the memory cells includes a channel layer, a charge trap layer on the channel layer, and a control electrode on the charge trap layer, the charge trap layer being shared by the memory cells. The charge trap layer includes program regions respectively disposed below the control electrodes of the memory cells, and charge spread blocking regions, each of which is disposed between two adjacent ones of the program regions and between two adjacent ones of the control electrodes. The control circuit controls the memory cell array so that a potential barrier is generated in the charge spread blocking regions by charging the charge spread blocking regions with charges having the same polarity as that of program charges stored in the program regions.

Abstract: A data storage device includes a non-volatile memory device, which includes a memory cell array including a plurality of memory cells and a control circuit. Each of the memory cells includes a channel layer, a charge trap layer on the channel layer, and a control electrode on the charge trap layer, the charge trap layer being shared by the memory cells. The charge trap layer includes program regions respectively disposed below the control electrodes of the memory cells, and charge spread blocking regions, each of which is disposed between two adjacent ones of the program regions and between two adjacent ones of the control electrodes. The control circuit controls the memory cell array so that a potential barrier is generated in the charge spread blocking regions by charging the charge spread blocking regions with charges having the same polarity as that of program charges stored in the program regions.