Abstract: The present disclosure relates to a method for providing cancer diagnosis information using a thermal analysis method and a portable cancer diagnosis device using a thermal analysis method. The method for providing cancer diagnosis information using a thermal analysis method according to the present disclosure is capable of diagnosing the type, progression, metastasis, etc. of cancer using the thermochemical reaction onset temperature, calorie change, etc. obtained by analyzing the heat flux to and from a biological sample. In addition, the portable cancer diagnosis device using a thermal analysis method of the present disclosure is capable of diagnosing the presence of cancer accurately and easily using the temperature function data depending on time measured by heating the biological sample.

Abstract: Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’) and dielectric layer formed of tantalum oxide (Ta2O5) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.

Abstract: Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’) and dielectric layer formed of tantalum oxide (Ta2O5) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.

Abstract: A method of manufacturing a ferroelectric memory device which can improve the adhesion between an intermediate insulating layer and a lower electrode and the surface roughness of the lower electrode, is disclosed. According to the present invention, a titanium layer and a first platinum layer are sequentially formed on a semiconductor substrate on which a first intermediate insulating layer is formed. The substrate is then thermal-treated under oxygen atmosphere to transform the titanium layer and the first platinum layer into a titanium oxide layer containing platinum. Next, a second platinum layer for a lower electrode, a ferroelectric thin film and a third platinum layer for an upper electrode are formed on the titanium oxide layer containing platinum, in sequence. The third platinum layer is then etched to form the upper electrode and the ferroelectric thin film, the second platinum layer and the titanium oxide layer containing platinum are etched to form a capacitor.