Patents by Inventor Ho-Kyung Park

Ho-Kyung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110259914
    Abstract: A dual-structure tube vessel and a method of producing the tube vessel are disclosed. The dual-structure tube vessel includes a cylindrical vessel body and a neck integrated with the vessel body into a single structure, and further includes: a body partitioning sheet provided in the vessel body and partitioning the interior of the vessel body into two sections; and a neck partitioning sheet provided in the neck and partitioning the interior of the neck into two sections. The vessel body and the body partitioning sheet may be fabricated using three sheets of material or one sheet of material. Further, the body partitioning sheet has a width equal to an inner circumference of a larger one of the two sections of the vessel body. Further, each of the vessel body and the body partitioning sheet is made of a threefold laminated sheet with a polyethylene/aluminum/polyethylene layered structure.
    Type: Application
    Filed: April 22, 2011
    Publication date: October 27, 2011
    Inventors: Kang Joon LEE, Ho Kyung Park
  • Patent number: 7528039
    Abstract: A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: May 5, 2009
    Assignee: Poongsan Microtec Co., Ltd.
    Inventors: Hyun-Sang Hwang, Ho-Kyung Park, Man Jang, Min-Seok Jo
  • Publication number: 20080166865
    Abstract: A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
    Type: Application
    Filed: January 28, 2008
    Publication date: July 10, 2008
    Applicant: Poongsan Microtec Co. Ltd. (Status: Corporation )
    Inventors: Hyun-Sang Hwang, Ho-Kyung Park, Man Jang, Min-Seok Jo