Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a process with respect to a substrate is performed, a susceptor which is installed in the chamber and on which the substrate is placed, a plurality of lift pins passing through the susceptor to support the substrate, and a plurality of protection plugs protruding from a bottom surface of the susceptor to surround a portion of each of the lift pins protruding from the bottom surface of the susceptor.

Abstract: An embodiment provides a sensing device comprising: a magnet; a first collector disposed to correspond to a path along which the magnet moves; and a first sensor disposed at one side of the first collector, wherein the first collector comprises a first leg part and a second leg part, the first leg part and the second leg part each comprise a facing surface disposed to face the magnet, and the sensing device comprises an area in which a gap between the first leg part and the second leg part increases along a direction from one side toward the other side thereof or an area in which the facing surface of each of the first leg part and the second leg part has a width decreasing along a direction from one side toward the other side thereof. Accordingly, the sensing device can reduce an effect of an external magnetic field to improve sensing accuracy.

Abstract: An embodiment provides a sensing device comprising: a magnet; a first collector disposed to correspond to a path along which the magnet moves; and a first sensor disposed at one side of the first collector, wherein the first collector comprises a first leg part and a second leg part, the first leg part and the second leg part each comprise a facing surface disposed to face the magnet, and the sensing device comprises an area in which a gap between the first leg part and the second leg part increases along a direction from one side toward the other side thereof or an area in which the facing surface of each of the first leg part and the second leg part has a width decreasing along a direction from one side toward the other side thereof. Accordingly, the sensing device can reduce an effect of an external magnetic field to improve sensing accuracy.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus including: a chamber in which a process is performed on a substrate; a susceptor installed in the chamber to support the substrate; and a showerhead installed above the susceptor, and the showerhead includes: a plurality of inner injection holes defined in an inner area corresponding to a portion above the substrate and injecting a reaction gas downward; and a plurality of outer injection holes defined in an outer area corresponding to a portion outside the inner area and injecting an inert gas along an inner wall of the chamber.

Abstract: An embodiment may provide a sensing device comprising: a stator; and a rotor including a magnet, wherein the stator comprises a first stator tooth, a second stator tooth, and a collector disposed between the first stator tooth and the second stator tooth, and the collector comprises a first collector and a second collector having a different length from the first collector.

Abstract: According to an embodiment of the present invention, a method for forming a thin film includes loading an object to be processed into a chamber, and while controlling the temperature of the object to be processed to be 400° C. or less, supplying an Si source gas and an oxidizing gas into the chamber to form a silicon oxide film on the surface of the object to be processed, wherein the oxidizing gas is heated to a temperature exceeding 400° C. before being supplied into the chamber.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Abstract: Disclosed is a torque sensor connected with a first shaft and a second shaft, the torque sensor including a first case, a second case coupled with the first case, a third case coupled with the second case, a torque sensor module disposed between the first case and the second case and connected with the first shaft and the second shaft, and an angle sensor module disposed between the second case and the third case. The second case includes first fixing units formed on an outer circumferential surface thereof, and the first fixing units are rotationally symmetrical with respect to a longitudinal axis.

Abstract: According to an embodiment of the present invention, provided is a method for forming an amorphous thin film, the method comprising: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Abstract: Disclosed is a torque sensor connected with a first shaft and a second shaft, the torque sensor including a first case, a second case coupled with the first case, a third case coupled with the second case, a torque sensor module disposed between the first case and the second case and connected with the first shaft and the second shaft, and an angle sensor module disposed between the second case and the third case. The second case includes first fixing units formed on an outer circumferential surface thereof, and the first fixing units are rotationally symmetrical with respect to a longitudinal axis.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).