Patents by Inventor Ho Ra
Ho Ra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136290Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.Type: ApplicationFiled: May 23, 2023Publication date: April 25, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jee Woong KIM, Jin Kyu KIM, Ho Jun KIM, Jae Hyun AHN, So Ra YOU
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Patent number: 11946051Abstract: The present invention relates to a pharmaceutical composition for preventing or treating hypertrophic scars. The present inventors have found that the inhibition of expression of TXNDC5, PRRC1, S100A11, Galectin 1, Filamin A, eIF-5A, Annexin A2, and FABP5 can be a new target for improving and treating hypertrophic scars. In the present invention, TXNDC5-, PRRC1-, S100A11-, Galectin 1-, Filamin A-, eIF-5A-, Annexin A2-, and FABP5-specific siRNAs were constructed to determine the probability of treating the hypertrophic scars. As a result, the knockdown of the protein or a gene encoding the protein induces apoptosis in the hypertrophic scars and reduces collagen expression, which can be very useful in treating wounds.Type: GrantFiled: November 21, 2022Date of Patent: April 2, 2024Assignee: Tego Science Inc.Inventors: Saewha Jeon, Ho Yun Chung, Na Ra Oh, Yun Hee Kim, Jikhyon Han, Hyun Ah Moon
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Patent number: 11909176Abstract: An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.Type: GrantFiled: October 15, 2020Date of Patent: February 20, 2024Assignee: The Regents of the University of MichiganInventors: Yong-Ho Ra, Roksana Tonny Rashid, Xianhe Liu, Zetian Mi
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Publication number: 20230395746Abstract: A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.Type: ApplicationFiled: August 17, 2023Publication date: December 7, 2023Inventors: Zetian MI, Yong-Ho RA, Roksana RASHID, Xianhe LIU
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Patent number: 11810996Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: GrantFiled: February 7, 2022Date of Patent: November 7, 2023Assignee: The Regents of the University of MichiganInventors: Zetian Mi, Yong-Ho Ra, Renjie Wang
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Patent number: 11804570Abstract: A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.Type: GrantFiled: July 24, 2018Date of Patent: October 31, 2023Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Zetian Mi, Yong-Ho Ra, Roksana Rashid, Xianhe Liu
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Publication number: 20220165913Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: ApplicationFiled: February 7, 2022Publication date: May 26, 2022Inventors: Zetian MI, Yong-Ho RA, Renjie WANG
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Patent number: 11276799Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: GrantFiled: June 25, 2020Date of Patent: March 15, 2022Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Zetian Mi, Yong-Ho Ra, Renjie Wang
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Publication number: 20210119420Abstract: An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.Type: ApplicationFiled: October 15, 2020Publication date: April 22, 2021Inventors: Yong-Ho RA, Roksana Tonny RASHID, Xianhe LIU, Zetian MI
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Publication number: 20200328326Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: ApplicationFiled: June 25, 2020Publication date: October 15, 2020Inventors: Zetian MI, Yong-Ho RA, Renjie WANG
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Patent number: 10762933Abstract: A semiconductor device includes a latch control circuit configured to generate a latch input signal, which is enabled in response to a latency signal, and configured to generate a latch output signal, which is enabled in response to an order control signal. The semiconductor device also includes a pipe latch circuit configured to latch input data in response to a pipe input signal and configured to output the latched input data as latch data in response to a pipe output signal. The semiconductor device additionally includes a data output circuit configured to latch the latch data in response to the latch input signal and configured to output the latched latch data as output data in response to the latch output signal, wherein the output data is outputted by performing an alignment operation for the latch data in response to the latch output signal.Type: GrantFiled: November 21, 2018Date of Patent: September 1, 2020Assignee: SK hynix Inc.Inventors: Hong Gyeom Kim, Dae Ho Ra, Byung Kuk Yoon, Min Sik Han
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Patent number: 10734545Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: GrantFiled: June 21, 2017Date of Patent: August 4, 2020Assignee: The Regents of the University of MichiganInventors: Zetian Mi, Yong-Ho Ra, Renjie Wang
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Publication number: 20190325925Abstract: A semiconductor device includes a latch control circuit configured to generate a latch input signal, which is enabled in response to a latency signal, and configured to generate a latch output signal, which is enabled in response to an order control signal. The semiconductor device also includes a pipe latch circuit configured to latch input data in response to a pipe input signal and configured to output the latched input data as latch data in response to a pipe output signal. The semiconductor device additionally includes a data output circuit configured to latch the latch data in response to the latch input signal and configured to output the latched latch data as output data in response to the latch output signal, wherein the output data is outputted by performing an alignment operation for the latch data in response to the latch output signal.Type: ApplicationFiled: November 21, 2018Publication date: October 24, 2019Applicant: SK hynix Inc.Inventors: Hong Gyeom KIM, Dae Ho RA, Byung Kuk YOON, Min Sik HAN
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Patent number: 10312082Abstract: Semiconductor light emitting diodes (LEDs) formed as (Al)GaN-based nanowire structures have a first semiconductor layer, a second semiconductor layer, and a thin metallic layer fabricated therebetween. The structures, operating in the deep ultraviolet (UV) spectral range, exhibit high photoluminescence efficiency at room temperature. The structures may be formed of an epitaxial metal tunnel junction operating as a reflector that enhances carrier transport to and from the semiconductor alloy layers, capable of producing external quantum efficiencies at least one order of magnitude higher than convention devices.Type: GrantFiled: May 9, 2017Date of Patent: June 4, 2019Assignee: The Regents of the University of MichiganInventors: Zetian Mi, Sharif Sadaf, Yong-Ho Ra, Thomas Szkopek
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Publication number: 20190148583Abstract: A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.Type: ApplicationFiled: July 24, 2018Publication date: May 16, 2019Inventors: Zetian MI, Yong-Ho RA, Roksana RASHID, Xianhe LIU
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Publication number: 20180374988Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.Type: ApplicationFiled: June 21, 2017Publication date: December 27, 2018Applicant: THE REGENTS OF THE UNVERSITY OF MICHIGANInventors: Zetian Mi, Yong-Ho Ra, Renjie Wang
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Patent number: 10040980Abstract: Disclosed is a photo-curable resin composition for an adhesive film comprising a (meth)acrylic acid ester-based photo-curable resin which is end-capped and cross-linked with a multifunctional molecular weight regulator.Type: GrantFiled: March 16, 2015Date of Patent: August 7, 2018Assignee: LG Chem, Ltd.Inventors: Ji-Hye Kim, Hong-June Choi, Byung-Ho Ra, Jang-Soon Kim
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Publication number: 20170323788Abstract: Semiconductor light emitting diodes (LEDs) formed as (Al)GaN-based nanowire structures have a first semiconductor layer, a second semiconductor layer, and a thin metallic layer fabricated therebetween. The structures, operating in the deep ultraviolet (UV) spectral range, exhibit high photoluminescence efficiency at room temperature. The structures may be formed of an epitaxial metal tunnel junction operating as a reflector that enhances carrier transport to and from the semiconductor alloy layers, capable of producing external quantum efficiencies at least one order of magnitude higher than convention devices.Type: ApplicationFiled: May 9, 2017Publication date: November 9, 2017Inventors: Zetian Mi, Sharif Sadaf, Yong-Ho Ra, Thomas Szkopek
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Patent number: 9676986Abstract: Provided is an adhesive composition for a heat dissipating adhesive tape, the adhesive composition comprising a (meth)acrylic acid ester based photocurable resin, a thermal conductive filler, and a benzotriazole-based compound.Type: GrantFiled: March 16, 2015Date of Patent: June 13, 2017Assignee: LG Chem, Ltd.Inventors: Ji-Hye Kim, Byung-Ho Ra, Jang-Soon Kim
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Publication number: 20160222260Abstract: Disclosed is a photo-curable resin composition for an adhesive film comprising a (meth)acrylic acid ester-based photo-curable resin which is end-capped and cross-linked with a multifunctional molecular weight regulator.Type: ApplicationFiled: March 16, 2015Publication date: August 4, 2016Inventors: Ji-Hye KIM, Hong-June CHOI, Byung-Ho RA, Jang-Soon KIM