Abstract: A motor driving apparatus includes a motor having a plurality of windings, a first inverter which is connected to a first end of each of the plurality of windings and drives the motor, a second inverter which is connected to a second end of each of the plurality of windings and selectively drives the motor according to a motor drive mode, and a controller which generates a current command for the motor according to a torque command and a voltage utilization rate control value, determines whether to perform linearization control for the current command based on a present counter magnetic flux of the motor and a switching reference counter magnetic flux for the motor drive mode, and adjusts the voltage utilization rate control value such that a value of the current command is linearized in a section in which the linearization control is performed.

Abstract: The present disclosure relates to a system for controlling a motor of a vehicle for increasing control accuracy of the motor for driving the vehicle, and an object of the present disclosure is to provide a system for controlling a motor of a vehicle, which may accurately perform a motor control even when a battery voltage (i.e., motor voltage) applied to the motor upon the driving control of the motor is changed.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: An apparatus and a method for managing a hang state of a mobile terminal are provided. The apparatus and method receives an input signal from a through an input device, such as a chip, independent of an Application Processor (AP) and detects and resolves the hang state. The apparatus includes an AP; an input device configured to receive an input and transmitting an input signal; an input processor configured to receive the input signal and transmit a notification signal to the AP; and a hang-state processor configured to determine that the AP is in a hang-state as the AP is not processing the input signal and the hang-state processor is further configured to remedy the hang-state of the AP, wherein upon receiving the notification signal the AP requests the input signal from the input processor.

Abstract: A refrigerator comprises a cabinet providing a refrigerating compartment and a machine compartment isolated from the refrigerating compartment, said cabinet installed with a door for opening and closing the refrigerating compartment; and a refrigerating unit detachably installed in the machine compartment, for supplying cool air into the refrigerating compartment, and including mechanisms performing a refrigerating cycle of compression, condensation, expansion and evaporation, said mechanisms integrally installed in the machine compartment. Accordingly, a fabrication process of a refrigerator is simplified and cost and operating time for installation, maintenance and repair of the refrigerating unit can be reduced.