Abstract: A motor driving apparatus includes a motor having a plurality of windings, a first inverter which is connected to a first end of each of the plurality of windings and drives the motor, a second inverter which is connected to a second end of each of the plurality of windings and selectively drives the motor according to a motor drive mode, and a controller which generates a current command for the motor according to a torque command and a voltage utilization rate control value, determines whether to perform linearization control for the current command based on a present counter magnetic flux of the motor and a switching reference counter magnetic flux for the motor drive mode, and adjusts the voltage utilization rate control value such that a value of the current command is linearized in a section in which the linearization control is performed.

Abstract: The present disclosure relates to a system for controlling a motor of a vehicle for increasing control accuracy of the motor for driving the vehicle, and an object of the present disclosure is to provide a system for controlling a motor of a vehicle, which may accurately perform a motor control even when a battery voltage (i.e., motor voltage) applied to the motor upon the driving control of the motor is changed.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a buried gate structure located on a first recess in the first region of the substrate, and a recess gate structure located on a second recess in the second region of the substrate, wherein the buried gate structure is buried in the substrate, an upper portion of the recess gate structure is not buried in the substrate, and a first work function adjustment layer in the buried gate structure may include a material identical to a material included in a second work function layer of the recess gate structure.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a buried gate structure located on a first recess in the first region of the substrate, and a recess gate structure located on a second recess in the second region of the substrate, wherein the buried gate structure is buried in the substrate, an upper portion of the recess gate structure is not buried in the substrate, and a first work function adjustment layer in the buried gate structure may include a material identical to a material included in a second work function layer of the recess gate structure.