Patents by Inventor Ho S. Chen

Ho S. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5622305
    Abstract: A method for bonding one body to another, such as a laser device to a submount, uses a metallic layer composed of a Group VB metal, such as niobium, sandwiched between a non-metallic layer and solder layer formed by an approximate Au-Sn eutectic layer. Advantageously the Group VB layer is formed at a submount temperature of less than approximately 201.degree. C., advantageously less than approximately 125.degree. C., and preferably less than approximately 101.degree. C.--advantageously to a thickness in the approximate range 0.05 .mu.m to 0.2 .mu.m, or even thinner if pinholes do not develop. The non-metallic layer is located on one of the bodies, and the other body has a metallic coating advantageously capped with an Au layer.
    Type: Grant
    Filed: May 10, 1995
    Date of Patent: April 22, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Donald D. Bacon, Cheng-Hsuan Chen, Ho S. Chen, Avishay Katz, King L. Tai
  • Patent number: 5569433
    Abstract: We have made the surprising discovery that small amounts of Ag below 1% by weight are effective in making Bi--Sn alloys less strain-rate sensitive without deleteriously affecting the melting character of the alloy. A Pb-free solder composition comprising at least 40% by weight Bi, between 40% and 60% Sn, and between 0.05 and 1% Ag is effective to increase the total elongation of the solder by at least 20% under the same processing conditions. Moreover the solder is free of undesirable Ag-containing phases with a melting point in excess of the 183.degree. C. melting point of the Pb--Sn binary eutectic alloy. In a preferred embodiment, the composition comprises 54.75% Bi, 45% Sn, and 0.25 % Ag.
    Type: Grant
    Filed: November 8, 1994
    Date of Patent: October 29, 1996
    Assignee: Lucent Technologies Inc.
    Inventors: Ho S. Chen, Sungho Jin, Mark T. McCormack
  • Patent number: 5538686
    Abstract: Pb-free solder alloys based on the Sn-In-Zn system (exemplarily 86:5:9 weight %) are disclosed. Compositions can have a melting temperature in the range 183.degree. C..+-.10.degree. C. and thus can be readily substituted for conventional 40 Pb-60 Sn solder. The novel compositions also can possess superior mechanical properties, compared to the 40/60 Pb-Sn composition, and readily wets copper. Bi and/or Sb may be added to the Sn-In-Zn base to reduce the tendency for the formation of lower temperature phases.
    Type: Grant
    Filed: June 27, 1994
    Date of Patent: July 23, 1996
    Assignee: AT&T Corp.
    Inventors: Ho S. Chen, Sungho Jin, Mark T. McCormack
  • Patent number: 5100870
    Abstract: Disclosed is a broadly applicable method for making an article that, exemplarily comprises a superconductive oxide body, including a thin layer on a substrate, or powder particles. In a preferred embodiment, the method comprises forming a precursor melt and contacting at least a part of the melt with oxygen such that the concentration of oxygen in the part of the melt increase to a critical concentration, resulting in formation of the desired oxide, substantially without drop in temperature. The precursor melt comprises at least one metallic element M, and at least the part of the melt is at a temperature T, with T.sub.m <T<T.sub.o, where T.sub.m is the freezing temperature of the melt and T.sub.o is the melting temperature of the superconductive oxide. In an exemplary embodiment the melt consists essentially of Yb, Ba, and Cu in 1:2:3 atomic ratio, T is about 900.degree. C. A layer of superconductive oxide on a Sr-TiO.sub.3 substrate is formed by dipping the hot (900.degree. C.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: March 31, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Ho S. Chen, George S. Indig, Lionel C. Kimerling