Abstract: A dry etching method comprises placing a semiconductor substrate in a reactor, the semiconductor substrate comprising a photoresist pattern formed on an etching target layer, supplying carbon monoxide gas into the reactor to selectively deposit polymer on the photoresist pattern to form a polymer layer, and etching the etching target layer using the photoresist pattern and the polymer layer as an etch mask.

Abstract: A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film is formed on the dielectric film, and then the top electrode film is etched to form a top electrode. A hard metallic polymer formed during the etching of the top electrode film is removed using a mixture of an oxygen gas and a fluorocarbon based gas. The lifting of the thin films is effectively prevented, and the yield of the manufacturing process for manufacturing a MIM capacitor is increased. Additionally, the MIM capacitor has a uniform capacitance because the damage to the dielectric film is prevented, and the oxidation of the bottom electrode is also prevented.