Patents by Inventor Ho-Seok Hwang

Ho-Seok Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10756550
    Abstract: According to an aspect of the present invention, there is provided a battery protection circuit module including a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell, a second positive terminal and a second negative terminal electrically connected to a charger or an electronic device, a single field-effect transistor including a drain terminal, a source terminal, a gate terminal, and a well terminal, wherein the drain terminal is electrically connected to the first negative terminal and the source terminal is electrically connected to the second negative terminal, and a protection integrated circuit (P-IC) for controlling charging/discharging of the battery bare cell by controlling the gate terminal to control whether to switch on the single field-effect transistor and controlling a bias voltage of the well terminal by using an internal switch.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: August 25, 2020
    Assignee: ITM SEMICONDUCTOR CO., LTD.
    Inventors: Hyuk Hwi Na, Ho Seok Hwang, Young Seok Kim, Sang Hoon Ahn
  • Patent number: 10648880
    Abstract: Provided are a pressure sensor device and a method of manufacturing the same. The pressure sensor device includes a housing including an air inlet and a fluid inlet provided in different directions, a substrate provided in an inner space of the housing and including a through-hole through which the air passes, and a pressure sensor chip mounted on the substrate to cover the through-hole in such a manner that a pressure of a fluid flowing in from the fluid inlet is applied to a top surface thereof and a bottom surface thereof is exposed to the air through the through-hole, in order to measure the pressure of the fluid relative to a pressure of the air, wherein the inner space is divided into an upper region and a lower region with respect to the substrate, and wherein the upper region is divided into a first inner region in which the pressure sensor chip is provided and a second inner region through which the air passes.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: May 12, 2020
    Assignee: ITM SEMICONDUCTOR CO., LTD.
    Inventors: Hyuk Hwi Na, Ho Seok Hwang, Ja Guen Gu, Hyang Won Kang
  • Publication number: 20190310206
    Abstract: Provided are a dust detection apparatus a method of manufacturing the same, and the dust detection apparatus may include a body capable of sucking in or discharging air containing dust, by using a fan, and including a fluidic channel through which the sucked air flows, a light emitter provided in the body to radiate a light signal by using a laser device, a lens provided in the body to concentrate the light signal radiated from the laser device, a light receiver provided in the body to detect scattered light generated when the radiated light signal is scattered by the dust in the air, a substrate provided in the body to mount electronic components thereon, and a shield case surrounding the body to be at least partially in contact with the substrate.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 10, 2019
    Inventors: Hyuk Hwi NA, Ho Seok HWANG, Dong Hee LEE, Jong Sik JANG
  • Publication number: 20190234989
    Abstract: Provided are a multi-sensor device capable of implementing a pressure sensor function and an acceleration sensor function by using one housing, and a method of manufacturing the multi-sensor device. The multi-sensor device may include a lead frame, a pressure sensing element electrically connected to the lead frame and being capable of measuring a relative pressure between a first part and a second part thereof, an acceleration sensor module electrically connected to the lead frame and being capable of measuring acceleration applied to an ambient environment thereof, and a housing mounted to protect at least a part of the lead frame, the pressure sensing element, and the acceleration sensor module, including a reference medium inlet hole to apply a pressure of a reference medium to the first part, and including a target medium inlet hole to apply a pressure of a target medium to the second part.
    Type: Application
    Filed: September 29, 2017
    Publication date: August 1, 2019
    Inventors: Hyuk Hwi NA, Ho Seok HWANG, Ja Guen GU, Hyang Won KANG
  • Publication number: 20190157653
    Abstract: Provided is a battery protection circuit module package capable of easily achieving high integration and size reduction. The battery protection circuit module package includes a terminal lead frame including a first internal connection terminal lead and a second internal connection terminal lead provided at two edges of the terminal lead frame and electrically connected to electrode terminals of a battery bare cell, and a plurality of external connection terminal leads provided between the first and second internal connection terminal leads and serving as a plurality of external connection terminals, and a device package including a substrate mounted on the terminal lead frame to be electrically connected to the terminal lead frame, and providing a battery protection circuit device thereon.
    Type: Application
    Filed: January 22, 2019
    Publication date: May 23, 2019
    Inventors: Ho-seok HWANG, Young-Seok KIM, Seong-beom PARK, Sang-hoon AHN, Tae Hwan JUNG, Seung-uk PARK, Jae-ku PARK, Myoung-Ki MOON, Hyun-suck LEE, Da-Woon JUNG
  • Patent number: 10283981
    Abstract: A protection IC includes a bias output terminal connected to a back gate of a MOS transistor, a load side terminal connected to a power supply path between a load and the MOS transistor, a load side switch inserted in an electric current path connecting the bias output terminal and the load side terminal, and a control circuit configured to control the load side switch based on a state of a secondary battery and thereby cause a back gate control signal for controlling a voltage of the back gate to be output from the bias output terminal. The load side switch is formed on an N-type silicon substrate and includes at least two NMOS transistors whose drains are connected to each other, and the control circuit is configured to simultaneously turn on or turn off the two NMOS transistors based on the state of the secondary battery.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: May 7, 2019
    Assignees: MITSUMI ELECTRIC CO., LTD., ITM Semiconductor Co., Ltd.
    Inventors: Shuhei Abe, Hyuk Hwi Na, Ho Seok Hwang, Young Seok Kim, Sang Hoon Ahn
  • Publication number: 20190086282
    Abstract: Provided is a pressure sensor apparatus including a lead frame, a pressure sensing element mounted on the lead frame to measure a relative pressure between a first part and a second part, and a housing including a reference medium inlet hole to apply a pressure of a reference medium to the first part, and including a target medium inlet hole to apply a pressure of a target medium to the second part, wherein the reference medium inlet hole is provided in a first surface of the housing, wherein the target medium inlet hole is provided in a second surface of the housing other than the first surface, and wherein the lead frame includes one or more insertion terminals configured to be inserted into and electrically connected to terminal holes of a wire connector.
    Type: Application
    Filed: March 9, 2017
    Publication date: March 21, 2019
    Inventors: Hyuk Hwi NA, Ho Seok HWANG, Ja Guen GU, Dong Hee LEE, Hyang Won KANG, Hyung Jin LIM, Yeong Seol KWON
  • Publication number: 20180364126
    Abstract: Provided are a pressure sensor device and a method of manufacturing the same. The pressure sensor device includes a housing including an air inlet and a fluid inlet provided in different directions, a substrate provided in an inner space of the housing and including a through-hole through which the air passes, and a pressure sensor chip mounted on the substrate to cover the through-hole in such a manner that a pressure of a fluid flowing in from the fluid inlet is applied to a top surface thereof and a bottom surface thereof is exposed to the air through the through-hole, in order to measure the pressure of the fluid relative to a pressure of the air, wherein the inner space is divided into an upper region and a lower region with respect to the substrate, and wherein the upper region is divided into a first inner region in which the pressure sensor chip is provided and a second inner region through which the air passes.
    Type: Application
    Filed: April 11, 2016
    Publication date: December 20, 2018
    Inventors: Hyuk hwi NA, Ho Seok HWANG, Ja Guen GU, Hyang Won KANG
  • Patent number: 10109731
    Abstract: A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: October 23, 2018
    Assignees: Magnachip Semiconductor, Ltd., ITM Semiconductor Co., Ltd.
    Inventors: Soo Chang Kang, Seung Hyun Kim, Yong Won Lee, Ho Seok Hwang, Sang Hoon Ahn
  • Patent number: 10090690
    Abstract: A secondary battery protection circuit includes a first terminal connected to a power supply path between a secondary battery and a MOS transistor, a second terminal connected to the power supply path between a load and the MOS transistor, a third terminal connected to a gate of the MOS transistor, a fourth terminal connected to a back gate of the MOS transistor, a control circuit that outputs a switch control signal based on a detected abnormal state of the secondary battery, and a switch control circuit including a first switch for connecting the fourth terminal with the first terminal and a second switch for connecting the fourth terminal with the second terminal. At least one of the resistance between the fourth terminal and the first terminal and the resistance between the fourth terminal and the second terminal is greater than the on resistance value of the MOS transistor.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: October 2, 2018
    Assignees: MITSUMI ELECTRIC CO., LTD., ITM Semiconductor Co., Ltd.
    Inventors: Shuhei Abe, Hyuk Hwi Na, Ho Seok Hwang, Young Seok Kim, Sang Hoon Ahn
  • Publication number: 20180233785
    Abstract: According to an aspect of the present invention, there is provided a battery protection circuit module including a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell, a second positive terminal and a second negative terminal electrically connected to a charger or an electronic device, a first protection circuit unit including a first single field-effect transistor connected between at least one of the first positive and negative terminals and at least one of the second positive and negative terminals, and a first protection integrated circuit (P-IC) for controlling the first single field-effect transistor, and a second protection circuit unit including a second single field-effect transistor connected between at least one of the first positive and negative terminals and at least one of the second positive and negative terminals, and a second P-IC for controlling the second single field-effect transistor.
    Type: Application
    Filed: August 11, 2016
    Publication date: August 16, 2018
    Inventors: Hyuk Hwi NA, Ho Seok HWANG, Young Seok KIM, Sang Hoon AHN
  • Publication number: 20180226816
    Abstract: According to an aspect of the present invention, there is provided a battery protection circuit module including a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell, a second positive terminal and a second negative terminal electrically connected to a charger or an electronic device, a single field-effect transistor including a drain terminal, a source terminal, a gate terminal, and a well terminal, wherein the drain terminal is electrically connected to the first negative terminal and the source terminal is electrically connected to the second negative terminal, and a protection integrated circuit (P-IC) for controlling charging/discharging of the battery bare cell by controlling the gate terminal to control whether to switch on the single field-effect transistor and controlling a bias voltage of the well terminal by using an internal switch.
    Type: Application
    Filed: August 11, 2016
    Publication date: August 9, 2018
    Inventors: Hyuk Hwi NA, Ho Seok HWANG, Young Seok KIM, Sang Hoon AHN
  • Publication number: 20180083257
    Abstract: Provided is a battery protection circuit package capable of effectively preventing overcurrent and overheating and of being implemented at low costs in a compact size, the battery protection circuit package including a first terminal and a second terminal electrically connected to electrode terminals of a battery bare cell, a third terminal and a fourth terminal electrically connected to a charger or an electronic device, a first protection circuit module including one or more first transistors connected between at least one of the first and second terminals and at least one of the third and fourth terminals, and a first protection integrated circuit (IC) for controlling the one or more first transistors, and a second protection circuit module including one or more second transistors connected between at least one of the first and second terminals and at least one of the third and fourth terminals and connected in series to the one or more first transistors, and a second protection IC for controlling the one
    Type: Application
    Filed: February 25, 2016
    Publication date: March 22, 2018
    Inventors: Hyuk hwi NA, Ho Seok HWANG, Young Seok KIM, Sang Hoon AHN
  • Publication number: 20180013299
    Abstract: A secondary battery protection circuit includes a first terminal connected to a power supply path between a secondary battery and a MOS transistor, a second terminal connected to the power supply path between a load and the MOS transistor, a third terminal connected to a gate of the MOS transistor, a fourth terminal connected to a back gate of the MOS transistor, a control circuit that outputs a switch control signal based on a detected abnormal state of the secondary battery, and a switch control circuit including a first switch for connecting the fourth terminal with the first terminal and a second switch for connecting the fourth terminal with the second terminal. At least one of the resistance between the fourth terminal and the first terminal and the resistance between the fourth terminal and the second terminal is greater than the on resistance value of the MOS transistor.
    Type: Application
    Filed: July 3, 2017
    Publication date: January 11, 2018
    Inventors: Shuhei ABE, Hyuk Hwi Na, Ho Seok Hwang, Young Seok Kim, Sang Hoon Ahn
  • Publication number: 20180013298
    Abstract: A protection IC includes a bias output terminal connected to a back gate of a MOS transistor, a load side terminal connected to a power supply path between a load and the MOS transistor, a load side switch inserted in an electric current path connecting the bias output terminal and the load side terminal, and a control circuit configured to control the load side switch based on a state of a secondary battery and thereby cause a back gate control signal for controlling a voltage of the back gate to be output from the bias output terminal. The load side switch is formed on an N-type silicon substrate and includes at least two NMOS transistors whose drains are connected to each other, and the control circuit is configured to simultaneously turn on or turn off the two NMOS transistors based on the state of the secondary battery.
    Type: Application
    Filed: July 3, 2017
    Publication date: January 11, 2018
    Inventors: Shuhei ABE, Hyuk Hwi NA, Ho Seok HWANG, Young Seok KIM, Sang Hoon AHN
  • Patent number: 9767450
    Abstract: Provided is an antenna module package including a substrate, a wireless card payment antenna structure mounted on the substrate and including a first antenna chip and wireless card payment matching elements electrically connected to the first antenna chip, a near field communication (NFC) antenna structure mounted on the substrate, sharing the first antenna chip, and including an extended NFC antenna loop and NFC matching elements electrically connected to the first antenna chip, and a wireless charging antenna structure mounted on the substrate and including a second antenna chip, and an extended wireless charging antenna loop and wireless charging matching elements electrically connected to the second antenna chip.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: September 19, 2017
    Assignee: ITM SEMICONDUCTOR CO., LTD.
    Inventors: Hyeok Hwi Na, Ho Seok Hwang, Young Seok Kim, Seong Beom Park, Sang Hoon Ahn, Sun Ho Kim
  • Patent number: 9680973
    Abstract: Disclosed is an electronic device capable of near field communication (NFC) and of achieving high integration, size reduction, and good sensitivity. The electronic device includes an antenna chip provided inside a battery protection circuit package of a battery pack and having embedded an NFC antenna therein, and an extended antenna loop electrically connected to the antenna chip and provided outside the battery protection circuit package.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: June 13, 2017
    Assignee: ITM SEMICONDUCTOR CO., LTD.
    Inventors: Hyeok Hwi Na, Ho Seok Hwang, Young Seok Kim, Seong Beom Park, Sang Hoon Ahn, Sun Ho Kim
  • Publication number: 20170125576
    Abstract: A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.
    Type: Application
    Filed: October 26, 2016
    Publication date: May 4, 2017
    Applicants: Magnachip Semiconductor, Ltd., ITM Semiconductor Co., Ltd.
    Inventors: Soo Chang KANG, Seung Hyun KIM, Yong Won LEE, Ho Seok HWANG, Sang Hoon AHN
  • Publication number: 20160224975
    Abstract: Provided is an antenna module package including a substrate, a wireless card payment antenna structure mounted on the substrate and including a first antenna chip and wireless card payment matching elements electrically connected to the first antenna chip, a near field communication (NFC) antenna structure mounted on the substrate, sharing the first antenna chip, and including an extended NFC antenna loop and NFC matching elements electrically connected to the first antenna chip, and a wireless charging antenna structure mounted on the substrate and including a second antenna chip, and an extended wireless charging antenna loop and wireless charging matching elements electrically connected to the second antenna chip.
    Type: Application
    Filed: January 28, 2016
    Publication date: August 4, 2016
    Inventors: Hyeok Hwi NA, Ho Seok HWANG, Young Seok KIM, Seong Beom PARK, Sang Hoon AHN, Sun Ho KIM
  • Publication number: 20160181705
    Abstract: Disclosed is an electronic device capable of near field communication (NFC) and of achieving high integration, size reduction, and good sensitivity. The electronic device includes an antenna chip provided inside a battery protection circuit package of a battery pack and having embedded an NFC antenna therein, and an extended antenna loop electrically connected to the antenna chip and provided outside the battery protection circuit package.
    Type: Application
    Filed: December 17, 2015
    Publication date: June 23, 2016
    Inventors: Hyeok Hwi NA, Ho Seok HWANG, Young Seok KIM, Seong Beom PARK, Sang Hoon AHN, Sun Ho KIM