Patents by Inventor Ho Seok Jeong

Ho Seok Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming shallow trench isolation in semiconductor device using a pore-generating layer
    Patent number: 7579256
    Abstract: A method for forming shallow trench isolation in a semiconductor device including forming a pad oxide, a pad nitride, and a pore-generating layer on an entire surface of a semiconductor substrate in successive order; etching the pore-generating layer, the pad nitride, the pad oxide and the substrate to form a trench in the substrate; forming a trench oxide over the entire surface of the substrate by a CVD process to fill the trench; and removing the trench oxide in an active device area while retaining the trench oxide in the trench.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: August 25, 2009
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Ho Seok Jeong