Abstract: A display device includes a display panel having flexibility, a storage connected to a first end of the display panel and accommodating the display panel so that the display panel is inserted and withdrawn, an extension part connected to a second end of the display panel, which is opposite to the first end of the display panel, and facing one side of the storage in a first direction, and a display driving integrated circuit which receives image data and a control signal from a host and provides a data signal to the display panel. The display driving integrated circuit includes a data processor which receives a smart size change signal from the host and sets a non-active area of the display panel based on the smart size change signal.

Abstract: Disclosed is a method for pre-detecting a defective porous polymer substrate for a separator, including selecting a porous polymer substrate having a plurality of pores; observing the selected porous polymer substrate with a scanning electron microscope (SEM) to obtain an image of the porous polymer substrate; quantifying the average value of pore distribution index (PDI); correcting the quantified average value of pore distribution index to obtain the corrected average value of pore distribution index; determining whether or not the corrected average value of pore distribution index is 60 a.u. (arbitrary unit) or less; and classifying the porous polymer substrate as a good product, when the corrected average value of pore distribution index is determined to be 60 a.u. or less, and classifying the porous polymer substrate as a defective product, when the corrected average value of pore distribution index is determined to be larger than 60 a.u.

Abstract: The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor.

Abstract: The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor.

Abstract: A system and method for assisting a driver are provided. The method includes receiving, by a controller, vehicle traveling information and calculating a first distance between a present vehicle position and an end node. In addition, the controller is configured to calculate a second distance between the present vehicle position and a preceding vehicle based on the receiving information and calculate a third distance in which coasting is available until a present vehicle speed reaches a predetermined target speed. The method further includes determining, by the controller, whether coasting is available based on the first distance, the second distance, the third distance in which coasting is available, and a present vehicle speed of the vehicle, and outputting, when coasting is available, a message that instructs coasting.

Abstract: A system and method for assisting a driver are provided. The method includes receiving, by a controller, vehicle traveling information and calculating a first distance between a present vehicle position and an end node. In addition, the controller is configured to calculate a second distance between the present vehicle position and a preceding vehicle based on the receiving information and calculate a third distance in which coasting is available until a present vehicle speed reaches a predetermined target speed. The method further includes determining, by the controller, whether coasting is available based on the first distance, the second distance, the third distance in which coasting is available, and a present vehicle speed of the vehicle, and outputting, when coasting is available, a message that instructs coasting.

Abstract: A system and method for assisting a driver are provided. The method includes receiving, by a controller, vehicle traveling information and calculating a first distance between a present vehicle position and an end node. In addition, the controller is configured to calculate a second distance between the present vehicle position and a preceding vehicle based on the receiving information and calculate a third distance in which coasting is available until a present vehicle speed reaches a predetermined target speed. The method further includes determining, by the controller, whether coasting is available based on the first distance, the second distance, the third distance in which coasting is available, and a present vehicle speed of the vehicle, and outputting, when coasting is available, a message that instructs coasting.

Abstract: A chamber structure for a vehicle may include a housing, a chamber formed inside the housing and into which a blow-by gas flows, and a cooling water path which may be formed inside the housing around the chamber and through which a preheated cooling water passes.

Abstract: A chamber structure for a vehicle may include a housing, a chamber formed inside the housing and into which a blow-by gas flows, and a cooling water path which may be formed inside the housing around the chamber and through which a preheated cooling water passes.

Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.

Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.